KR100445850B1 - Exposure method and apparatus - Google Patents

Abstract

The straightness error of the moving mirror is corrected without driving the wafer stage.

Prior to the exposure, the laser beam is irradiated from the laser interferometers 7a and 7b onto the moving mirror 11a for measuring the position of the wafer stage 5 in the X direction, and the wafer stage 5 is moved in the Y direction step by step. The straightness error of the moving mirror 11a is calculated from the measured values of the laser interferometers 7a and 7b each time, and a straightness map with respect to the position of the wafer stage 5 of the straightness error is created and stored in the storage device 9. Remember Similarly, a straightness map is also created for the moving mirror 11b in the Y direction. At the time of exposure, the position error and yawing of the wafer stage 5 in the X-direction and Y-direction based on the straightness error of the moving mirrors 11a and 11b are based on the straightness map stored in the storage device 9. Drive (4) in the X, Y, and rotational directions to compensate.

Description

Exposure method and apparatus {EXPOSURE METHOD AND APPARATUS}

For example, in the photolithography process for manufacturing a semiconductor device, a liquid crystal display device, an imaging device (CCD, etc.) or a thin film magnetic head, the present invention is directed to an exposure method and an exposure apparatus for exposing a mask pattern to a photosensitive substrate. In particular, it is most suitable for application to an exposure apparatus for measuring the position of a stage for positioning a photosensitive substrate by means of a moving mirror fixed to the stage and an external interferometer.

Conventionally, for example, in order to manufacture a semiconductor device, a projection exposure apparatus (stepper or the like) for transferring a reticle pattern as a mask to each shot region of a wafer coated with a photosensitive material through a projection optical system has been used. In recent years, as miniaturization of integrated circuits and the like by semiconductor elements has progressed in recent years, in these projection exposure apparatuses, it is required to increase the overlapping accuracy between layers (layers) of circuit elements. One of the factors most affecting the overlapping accuracy is the alignment accuracy of the exposure transfer pattern (short region) on the wafer.

In general, the position of the wafer stage of the projection exposure apparatus is controlled based on a measurement value by an interferometer system comprising a moving mirror fixed on the stage and an external laser interferometer, but a moving mirror on the wafer stage (for example, a footnote shape). The straightness error of the reflecting surface of Miller) affects the alignment accuracy. Therefore, the technique of obtaining the straightness error corresponding to the position of the wafer stage already, storing the result as the straightness error map, and correcting the position of the wafer stage based on the straightness error map at the time of exposure is an example. For example, it is disclosed in Unexamined-Japanese-Patent No. 59-98446.

As described above, the reticle is fixed, and the positioning target value itself is corrected on the wafer stage side to correct the straightness error. However, an autofocus Z stage or the like is also incorporated into the wafer stage, and in order to correct positioning errors and yawing errors of the wafer stage based on the straightness error, the wafer stage can be corrected only by the movement or rotation of the wafer stage. There was a problem in that the surrounding device configuration and control system is complicated.

In addition, in order to cope with the recent large area of the transfer pattern, a scanning exposure apparatus such as a step-and-scan method in which the reticle and the wafer are synchronously scanned with respect to the projection optical system and the pattern images of the reticle are sequentially transferred to each shot area on the wafer. It is intended to be used. In such a scanning exposure apparatus, it is necessary to correct the straightness error continuously during the exposure scanning, and in this case, particularly high speed responsiveness is required, and thus there is a problem that the load on the wafer stage side is very high.

In view of such a point, an object of this invention is to provide the exposure method which correct | amends the straightness error of a moving mirror with a simple structure. Moreover, an object of this invention is to provide the exposure apparatus for implementing such an exposure method.

The first exposure method according to the present invention includes a substrate stage 5 for positioning a substrate 3, moving mirrors 11a and 11b fixed to the substrate stage, and light beams 13a to 13d in the moving mirror. ) Is an exposure apparatus having an interferometer (7a to 7d) for measuring the amount of movement of the substrate stage 5, the substrate 3 through the substrate stage (5) based on the measurement result of the interferometer (7a to 7d) In the exposure method of positioning the pattern 1 and transferring the pattern formed on the mask 1 onto the substrate 3, the straightness error of the moving mirrors 11a and 11b is measured in advance, and the measured straightness error. Is stored according to the position of the substrate stage 5, and the mask 1 is moved so as to cancel the straightness error of the moving mirrors 11a and 11b stored in advance according to the position of the substrate stage 5 at the time of exposure. Movement, and rotation).

According to this first exposure method of the present invention, the straightness error of the moving mirrors 11a and 11b of the substrate stage 50 is corrected by moving or rotating the mask stage 4 for positioning the mask 1. Since the mask stage 4 can be made lighter than the substrate stage 5, the responsiveness is high, and for example, the exposure apparatus is a reduced projection optical system, for example, a projection magnification of 1/5, 1 /. In the case of the projection exposure apparatus provided with four lights), the correction accuracy is increased by the projection magnification as compared with the case where the straightness error of the moving mirror is performed by the movement of the substrate stage as in the prior art.

The second exposure method according to the present invention further includes a substrate stage 5 for positioning the substrate 3, moving mirrors 11a and 11b fixed to the substrate stage, and a light beam 13a in the moving mirror. To an exposure apparatus provided with interferometers 7a to 7b for irradiating to 13d to measure yaw of the substrate stage 5, to correct the yaw of the substrate stage 5 measured by the interferometers 7a to 7b. As an exposure method of rotating and transferring the mask 1 on which the use pattern is formed and transferring the mask pattern onto the substrate 3, the straightness errors of the moving mirrors 11a and 11b are measured in advance, and the measured straightness errors. Is stored according to the position of the substrate stage 5, and the moving mirror 11a stored in advance according to the position of the substrate stage 5 when positioning the substrate 3 through the substrate stage 5 at the time of exposure. Measured by the interferometers 7a to 7d based on the straightness error of Obtaining a yaw Fifth survey of the plate stage (5), to correct the rotation angle of the mask to the Fifth survey.

In the second exposure method of the present invention, even when there is no error in the straightness of the moving mirrors 11a and 11b, the original yawing of the substrate stage 5 is corrected on the mask stage 4 side. In addition, since correction of yaw measurement of yawing caused by the straightness error of the moving mirrors 11a and 11b of the substrate stage 5 is performed by the rotation amount correction of the mask stage 4, the first aspect of the present invention is used. As in the exposure method, high responsiveness can be obtained.

Further, in the first and second exposure methods of the present invention, one example of the exposure apparatus is to sequentially transfer exposure of the pattern of the mask 1 on the substrate 3 by synchronously scanning the mask 1 and the substrate 3. In the scanning exposure apparatus, in this case, correction of the position or rotation angle of the mask 1 based on the straightness error of the moving mirrors 11a and 11b stored in advance according to the position of the substrate stage 5 is performed during scanning exposure. It is desirable.

As a result, in the scanning exposure apparatus, distortion of the exposure pattern due to the straightness error of the moving mirror is also corrected.

In addition, the exposure apparatus according to the present invention includes a mask stage 4 for positioning a mask 1 having a transfer pattern, a substrate stage 5 for positioning a substrate 3, and the substrate stage. Moving mirrors 11a and 11b fixed to the mirrors, and interferometers 7a to 7d for measuring displacement of the substrate stage 5 by irradiating the light beams 13a to 13d on the movable mirrors, and measuring the interferometers. In the exposure apparatus which performs positioning of the board | substrate 3 and the mask 1 based on this, and transfers and exposes the pattern of the mask 1 on the board | substrate 3, the moving mirrors 11a, 11b measured beforehand On the basis of the storage means 9 for storing the straightness error in accordance with the position of the substrate stage 5, the straightness error of the moving mirrors 11a and 11b stored in the storage means and the position of the substrate stage 5; The stage control means 8 which controls the displacement of the mask stage 4 is provided. .

According to such an exposure apparatus of the present invention, the storage means 9 stores the straightness error of the moving mirrors 11a and 11b of the substrate stage 5, and the stage control means 8 stores the substrate stage 5. The displacement of the mask stage 4 is controlled based on the position of. Thus, the first and second exposure methods of the present invention can be implemented.

Hereinafter, an example of embodiment of this invention is described with reference to FIG. This example applies the present invention when performing exposure with a stepper projection exposure apparatus.

Fig. 1 shows a perspective view of a schematic configuration of a projection exposure apparatus of the present embodiment. In Fig. 1, a pattern of the reticle 1 is illuminated by illumination light from an exposure illumination system not shown in the exposure, and the reticle 1 The pattern image of is reduced to the projection magnification β (β = 1/5 in this example) through the projection optical system 2 and transferred to the shot region ES1 on the wafer 3. Here, the Z axis is held parallel to the optical axis AX of the projection optical system 2, and the rectangular coordinate system of the plane perpendicular to the Z axis is the X axis and the Y axis.

The reticle 1, in which the original pattern of the circuit pattern is drawn, is driven by a small amount in the X direction, the Y direction, and the rotational direction around the optical axis AX through a reticle stage drive system not shown by the stage control system 8 ( 4) It is loaded on the top. Corners provided along a straight line parallel to the X axis through the optical axis AX, from the laser interferometer 6a disposed close to the -X direction on the reticle stage 4, in the -X direction on the reticle stage 4. The laser beam 12a is irradiated to the cube prism 10a, and the laser interferometer 6a detects the reflected beam from the corner cube prism 10a, so that the laser interferometer 6a is in the X direction of the corner cube prism 10a. Is measured, that is, the displacement of the reticle stage 4 in the X direction. In this case, by the action of the corner cube prism, the minute displacement and the minute rotation of the reticle stage 4 in the Y direction do not affect the measured value of the laser interferometer 6a.

Similarly, from the two laser interferometers 6b and 6c which are arranged in the + Y direction close to the reticle stage 4, they are the end portions of the + Y direction on the reticle stage 4, respectively, and on the Y axis through the optical axis AX. The laser beams 12b and 12c are irradiated to the corner cube prisms 10b and 10c provided at positions substantially symmetrical with respect to the parallel straight line, and the reflected beams from the corner cube prisms 10b and 10c are irradiated with the laser interferometers 6b and 6c. ), The displacement of the corner cube prisms 10b and 10c in the Y direction, that is, the displacement of two locations of the reticle stage 4 in the Y direction is measured. In this case, the displacement in the Y direction of the reticle stage 4 is obtained by calculating the average value of the measured values of the laser interferometers 6b and 6c, and the rotation angle of the reticle stage 4 is determined by the measured values of the laser interferometers 6b and 6c. It can obtain | require by the ratio of a difference and the space | interval of corner cube prism 10b, 10c.

Moreover, the wafer 3 to which the photosensitive material was apply | coated is mounted on the wafer stage 5 via the wafer holder not shown. The wafer stage 5 performs wafer positioning in the X-direction, Y-direction, Z-direction, and the like through a wafer stage drive system not shown by the stage control system 8. The wafer stage 5 is actually composed of an X stage for positioning in the X direction, a Y stage for positioning in the Y direction, a Z stage for positioning in the Z direction, and the like. At the end of the -X direction and the end of the + Y direction on the wafer stage 5, square mirror moving mirrors 11a and 11b each having a reflection surface substantially perpendicular to the X axis and the Y axis are fixed. From the two laser interferometers 7a, 7b, which are arranged symmetrically with respect to the straight line parallel to the X axis through the optical axis AX of the projection optical system 2, and facing the end of the -X direction of the wafer stage 5, respectively. The laser beams 13a and 13b are irradiated to the moving mirror 11a in parallel with the X-axis, and the laser interferometers 7a and 7b respectively detect the reflected beams from the moving mirror 11a, thereby The displacement in the X direction, that is, the displacement in the X direction at two places of the wafer stage 5 is measured.

Similarly, from the two laser interferometers 7c and 7d disposed opposite to the end portion in the + Y direction of the wafer stage 5 and symmetrically with respect to a straight line parallel to the Y axis through the optical axis AX, respectively, the moving mirror 11b ), The laser beams 13c and 13d are irradiated parallel to the Y axis, and the laser beam interferometers 7c and 7d detect the reflected beams from the moving mirror 11b, thereby causing displacement of the moving mirror 11b in the Y direction, That is, the displacement of the Y direction in two places of the wafer stage 5 is measured.

And based on the measurement result of the above laser interferometers 7a-7d, the position and yaw of the X-direction, Y-direction of the wafer stage 5 can be calculated | required. First, the position of the wafer stage 5 in the X direction can be obtained as an average value of the measured values of the laser interferometers 7a and 7b. Similarly, the position of the wafer stage 5 in the Y direction can be determined by the average value of the measured values of the laser interferometers 7c and 7d. Alternatively, yawing of the wafer stage 5 is obtained by averaging the difference between the measured value of the laser interferometer 7a and the measured value of the laser interferometer 7b and the difference between the measured value of the laser interferometer 7c and the measured value of the laser interferometer 7d. Can be.

In addition, the measurement values of the above-described laser interferometers 6a to 6c on the reticle side and the laser interferometers 7a to 7b on the wafer stage side are supplied to all stage control systems 8, and the calculation based on the measurement values of the laser interferometer is performed on all stages. In the system (8). The stage control system 8 is also connected with a storage device 9 for storing various data. In this example, the movable mirrors 11a and 11b are configured to provide separate columnar mirrors, but are mirror-machined into an integral L-shaped mirror or the side surface of the top table of the wafer stage 5. The structure used as a mirror may be sufficient.

Next, an example of the correction operation of the straightness error of the moving mirror of this example will be described.

First, the straightness of the moving mirrors 11a and 11b of the wafer stage 5 is measured prior to the exposure operation. Here, the moving mirror 11a in the X direction will be described, but the same applies to the moving mirror 11b in the Y direction. First, as shown in FIG. 2, after positioning the wafer stage 5 at a position where the laser beam 13b from the laser interferometer 7b is irradiated to the end portion of the moving mirror 11a in the -Y direction. The measured values of the laser interferometers 7a, 7b, 7c, and 7d are reset. Next, while maintaining the position in the X direction of the wafer stage 5 at a fixed position, that is, the Y stage in the wafer stage 5 is locked in the -Y direction while the X stage in the wafer stage 5 is locked. Stepwise step feed by the same amount as the interval a of (13a 13b), and the measured values Xai, Xbi (i = 1, 2, 3, ...) for each of the laser interferometers 7a and 7b on the X-axis for each step feed. The difference data ε i of the measured values of the data δ i (= Xai-Xbi) and the Y-axis laser interferometers 7c and 7d are recorded. At this time, since the difference data ε i of the measured values of the laser interferometers 7c and 7d on the Y-axis represents yawing of the wafer stage 5, by correcting the recording data with the yawing component, i.e., from difference data δ i as an example. By subtracting the difference data ε i, it is possible to obtain a difference in the straightness error of the reflection surface of the moving mirror 11a purely. By integrating this, the straightness map of the moving mirror 11a can be obtained. Regarding the moving mirror 11b in the Y direction, the wafer stage 5 is sequentially stepped in the X direction by the distance b (= space a) of the laser beams 13c and 13d, and the same measurement is performed.

Since the first straightness map obtained as described above has only data of a predetermined interval with respect to the X direction and the Y direction, the intermediate data are interpolated by an appropriate method, and the coordinate position x in the X direction of the wafer stage 5 is obtained. And a straightness map corresponding to the coordinate position y in the Y direction. The straightness map of the moving mirror 11a in the X direction is expressed as a function of the coordinate position y, and the straightness map of the moving mirror 11b in the Y direction is expressed as a function of the coordinate position X. This function is now ga (y) for the moving mirror 11a and gb (x) for the moving mirror 11b.

Next, in the actual exposure operation, the coordinate position of the wafer stage 5 is corrected based on the straightness map obtained first. As mentioned above, regarding the position of the translation stage of the wafer stage 5, the X direction is calculated | required by the average value of the average value of the measured value of the laser interferometers 7a, 7b, and the Y direction is made of the laser interferometers 7c, 7d. It is calculated | required by the average value of a measured value. Therefore, the map of the correction value according to this is calculated based on the straightness map stored in the storage device 9. Now, the arrangement of the exposure apparatus of the wafer stage 5 is (x, y), and the interval a between the laser beams 13a and 13b of the wafer stage 5 and the interval b between the laser beams 13c and 13d are common. 2d, the correction functions fa (y) and fb (x) corresponding to measurement errors in the X and Y directions of the laser interferometer based on the straightness errors of the moving mirrors 11a and 11b are as follows. Is expressed.

In this case, if the coordinate of the wafer stage 5 measured by the laser interferometer is set to (x, y), the actual coordinates from which the influence of the straightness error of the moving mirror is removed are (x-fa (y), y-fb It becomes (x).

Next, correction of yawing of the wafer stage 5 will be described. The difference between the measured values measured in the pairs of the laser interferometers 7a and 7b when the coordinate position of the wafer stage 5 is at (x, y) is Δx and the measured values measured in the pairs of the laser interferometers 7c and 7d. When the difference is Δy, the angle θ (x, y) of yawing of the wafer stage 5 in which the straightness error of the moving mirrors 11a and 11b is corrected is assumed to be extremely small. It is calculated by the formula.

The above formulas (1) to (3) are calculation means built in the stage control system 8 according to the position of the wafer stage 5 based on the straightness map stored in the storage device 9 at the time of actual exposure. Is calculated. The error of the translation position in the X direction, the Y direction, and yaw of the wafer stage 5 calculated by the above method are corrected by driving the reticle stage 4.

First, in order to correct the positional error of the translation stage of the wafer stage 5, the reticle stage 4 is displaced in the X direction and the Y direction. The displacement amount in this case is a correction function in the X and Y directions obtained by the formulas (1) and (2), when β is the projection magnification from the reticle 1 of the projection optical system 2 to the wafer stage 3. It is a value obtained by multiplying fa (y) and fb (x) by the inverse of the projection magnification 1 / β. That is, the displacement amount becomes (1 / β) fa (y) in the X direction and (1 / β) fb (x) in the Y direction. Next, in order to correct yaw of the wafer stage 5, the reticle stage 4 is rotated in the rotational direction by the angle θ (x, y) obtained by the equation (3). By the displacement and rotation of the reticle stage 4 in the translational direction, the wafer stage 5 is displaced by -fa (y) and fb (x) in the X and Y directions, and -θ (x, y in the rotation direction. It is equivalent to the result of rotating by). After the above operation is completed, the reticle 1 is irradiated with exposure illumination light, and when the circuit pattern of the reticle 1 is transferred to the shot region on the wafer, the wafer 3 according to the straightness error of the moving mirrors 11a and 11b. Array error is corrected.

According to the present invention as described above, by driving the reticle stage 4, the error of the position and yaw of the wafer stage 5 due to the straightness error of the moving mirrors 11a and 11b is corrected. In general, since the reticle stage can be made lighter than the wafer stage, the responsiveness is quick. In addition, when the projection magnification β of the projection optical system 2 is set to 1/5, for example, since the positioning resolution of the reticle stage 4 becomes substantially 1/5 of the wafer stage 5, the reticle stage By driving and correcting (4), the alignment accuracy is almost increased five times. Moreover, the structure which rotates a small amount of reticle stages can also be implement | achieved easily. Therefore, the straightness error of the moving mirror of the wafer stage can be corrected with high accuracy with a relatively simple configuration.

Next, another example of the embodiment of the present invention will be described with reference to FIG. 3. In this example, a scanning projection exposure apparatus different from the stepper type shown in Fig. 1 is used. In Fig. 3, the parts corresponding to Fig. 1 are denoted by the same reference numerals, and the description thereof is omitted.

Fig. 3 shows a perspective view of a schematic configuration of the scanning type exposure apparatus of the present embodiment, and in Fig. 3, during exposure, the reticle 1 is a slit-shaped illumination area 21 long in the X direction by an illumination optical system (not shown). ) Is illuminated, and a part of the pattern of the reticle 1 is projected onto the exposure region 22 that is elongated in the X direction on the wafer 3 which is conjugated with respect to the illumination region 21 and the projection optical system 2. Further, the reticle stage 4 of the present example is configured to be movable in the Y direction perpendicular to the X direction over the length of the width portion or more of the pattern area of the reticle 1, and the end of the reticle stage 4 in the -X direction. The moving mirror 10d in the columnar shape is fixed along the Y direction. Even if the scanning mirror 10d is scanned in parallel in the X direction from the laser interferometer 6a, the position in the X direction of the reticle stage 4 is accurately detected by the laser interferometer 6a. In addition, the reticle stage 4 of FIG. 3 is also configured to be able to displace a small amount in the X direction and to rotate clockwise or counterclockwise in a predetermined range as in the example of FIG. 1. The configuration other than that is the same as that of the example of FIG.

Then, during scanning exposure, the wafer (5) through the wafer stage 5 is synchronized with the scanning of the reticle 1 in the + Y direction (or -Y direction) through the reticle stage 4 with respect to the illumination region 21. 3) The shot region ES2 on the exposure area 22 is scanned in the -Y direction (or + Y direction) at a speed ratio corresponding to the projection magnification of the projection optical system 2, so that all of the pattern on the reticle 1 is transferred to the wafer ( Transferred to shot area ES2 in 3).

Also in this example, similarly to the example of FIG. 1, the straightness error of the moving mirrors 11a and 11b fixed to the wafer stage 5 is measured in advance and stored in the storage device 9 as the straightness map. During the actual exposure, the reticle stage 4 is driven based on the straightness map stored in the storage device 9, so that the wafer stage 5 according to the straightness error of the moving mirrors 11a and 11b. Correct positional error and yawing.

When the exposure apparatus is of the scanning exposure type as in this example, the straightness error of the moving mirrors 11a and 11b of the wafer stage 5 becomes not only the straightness error of the arrangement of the exposure areas but also the distortion of the transfer pattern in each shot area. It can also be Therefore, in the present example, the reticle stage 4 is X in the position shift amount and yawing in the X direction orthogonal to the scanning direction of the wafer stage 5 due to the straightness error of the moving mirrors 11a and 11b even during the exposure scanning. Correction by driving in the direction and rotation direction. In addition, since the measuring method of the straightness error of the moving mirrors 11a and 11b of the wafer stage 5, the calculation method of the correction value at the time of exposure, etc. are the same as the example of FIG. 1, it abbreviate | omits description.

In addition, the present invention is not limited to the above-described stepper and scanning projection exposure apparatuses, and is applicable to all exposure apparatuses including a proximity method and the like.

As described above, the present invention is not limited to the above-described embodiment, and may have various configurations without departing from the gist of the present invention.

According to the first exposure method of the present invention, the straightness error of the moving mirror of the substrate stage is corrected by the movement of the mask stage for performing mask positioning, for example. Therefore, the straightness error can be corrected with a simple configuration as compared with the case of performing correction on the substrate stage side of a complicated mechanism. In addition, since the mask stage can be reduced in weight compared with the substrate stage, high responsiveness can be obtained and the correction accuracy can be increased when performing the reduced projection. Further, by applying the present invention, by further correcting the remaining position shift amount error of the substrate stage, which does not depend on the straightness error of the moving mirror, by using the mask stage of the high speed response, the alignment accuracy between the mask and the substrate is easily improved. It also has the advantage of being able to.

Further, according to the second exposure method of the present invention, since the correction of the mismeasurement dependent on the straightness error of the moving mirror of the substrate stage yawing is performed by the rotation of the mask stage, the correction of the straightness error of the moving mirror is conventionally performed. Compared to the method described above, it can be easily realized mechanically. In addition, as in the first exposure method of the present invention, high responsiveness and precision can be obtained.

Further, in the first and second exposure methods of the present invention, the exposure apparatus is a scanning exposure apparatus that sequentially transfers and exposes a mask pattern onto a substrate by synchronously scanning a mask and a substrate, and in advance according to the position of the substrate stage. In the case of correcting the position or rotation angle of the mask based on the meandering error of the meandering mirror during scanning exposure, the advantage of correcting the distortion of the exposure pattern according to the meridional error of the moving mirror in the scanning exposure apparatus is also provided. have.

In addition, according to the exposure apparatus of the present invention, since it includes storage means for storing the straightness error of the moving mirror of the substrate stage and stage control means for controlling the displacement of the mask stage based on the position of the substrate stage, The first and second exposure methods of the invention can be carried out.

BRIEF DESCRIPTION OF THE DRAWINGS The perspective view which shows schematic structure of the projection exposure apparatus used by an example of embodiment of this invention.

2 is a plan view of a wafer stage used to explain a method for measuring the straightness error of a moving mirror;

3 is a perspective view showing a schematic configuration of a scanning exposure apparatus used in another example of the embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

1: Reticle 2: Projection Optical System

3: wafer 4: reticle stage

5 Wafer Stage 6a to 6c Laser Interferometer (Reticle Side)

7a to 7d: laser interferometer (wafer side) 8: stage control system

9: Memory 10a ~ 10c: Corner Cube Prism

10d, 11a, 11b: moving mirror

Claims (17)

An exposure apparatus including a substrate stage for positioning a substrate, a moving mirror fixed to the substrate stage, and an interferometer for measuring a movement amount of the substrate stage by irradiating a light beam to the moving mirror. In the exposure method which performs positioning of the said board | substrate through the said board | substrate stage, and transfers the pattern formed in the mask on the said board | substrate, Measure the straightness error of the moving mirror in advance, and store the measured straightness error according to the position of the substrate stage, And the mask is moved so as to cancel the straightness error of the moving mirror stored in advance according to the position of the substrate stage when positioning the substrate through the substrate stage at the time of exposure. An exposure apparatus including a substrate stage for positioning a substrate, a moving mirror fixed to the substrate stage, and an interferometer for irradiating a light beam to the moving mirror to measure yaw of the substrate stage, the exposure apparatus being measured by the interferometer. In the exposure method for transferring the mask pattern on the substrate by rotating a mask formed with a transfer pattern to correct yaw of the substrate stage, Measure the straightness error of the moving mirror in advance, and store the measured straightness error according to the position of the substrate stage, In the case of positioning the substrate through the substrate stage at the time of exposure, the error of yawing of the substrate stage measured by the interferometer based on the straightness error of the moving mirror stored in advance according to the position of the substrate stage. Obtaining a measurement, and correcting the rotation angle of the mask by the wrong measurement. The method according to claim 1 or 2, The exposure apparatus is a scanning exposure apparatus that sequentially transfers the pattern of the mask onto the substrate by synchronously scanning the mask and the substrate, And correcting the position or rotation angle of the mask based on the straightness error of the moving mirror stored in advance according to the position of the substrate stage even during scanning exposure. A mask stage for positioning a mask on which a transfer pattern is formed, a substrate stage for positioning a substrate, a moving mirror fixed to the substrate stage, and a beam of light are irradiated to the moving mirror to measure displacement of the substrate stage. An exposure apparatus comprising: an interferometer for performing a positioning between the substrate and the mask based on a measurement result of the interferometer, and transferring the mask pattern onto the substrate. Storage means for storing the straightness error of the moving mirror stored in advance according to the position of the substrate stage; And And a stage control means for controlling the displacement of the mask stage based on the straightness error of the moving mirror stored in the storage means and the position of the substrate stage. A scanning exposure apparatus for exposing the substrate by scanning a mask and a substrate in synchronism, A moving mirror extending in the scanning direction integrally with the substrate and used for detecting positional information of the substrate in a direction perpendicular to the scanning direction; Detection means for detecting progress information of the reflective surface of the moving mirror; And And control means for adjusting the position of the mask in a direction perpendicular to the scanning direction of the mask based on the progress information of the reflective surface during scanning exposure of the substrate. The method of claim 5, A substrate stage movable by holding the substrate, and a mask stage movable by holding the mask, The moving mirror is provided on the substrate stage, And the control means moves the mask stage and the substrate stage synchronously during the scanning exposure. The method of claim 6, And an interferometer for detecting positional information of the substrate in a direction perpendicular to the scanning direction by irradiating a beam to the moving mirror. The method of claim 7, wherein And the detecting means detects the straightness information using the detection signal from the interferometer. The method of claim 6, And the detecting means detects yawing information of the substrate stage when the substrate is moved in the scanning direction. The method of claim 9, And the control means rotates the mask during the scanning exposure based on the yawing information. A scanning exposure method for exposing the substrate by scanning a mask and a substrate in synchronization, Detecting straightness information of a reflecting surface of the moving mirror extending in the scanning direction moving integrally with the substrate, used to detect positional information of the substrate in a direction perpendicular to the scanning direction; And And adjusting the position of the mask in a direction perpendicular to the scanning direction of the mask based on the straightness information of the reflective surface during scanning exposure of the substrate. The method of claim 11, The substrate is held on a substrate stage, The mask is held on a mask stage, The moving mirror is installed on the substrate stage, The scanning exposure method is performed by synchronously moving the mask stage and the substrate stage. The method of claim 12, And an interferometer for detecting positional information of the substrate in a direction perpendicular to the scanning direction by irradiating a beam to the moving mirror, and detecting the straightness information using a detection signal from the interferometer. Scanning exposure method. The method of claim 12, And detecting the yawing information of the substrate stage when the substrate is moved in the scanning direction. The method of claim 14, And a step of rotating the mask during the scanning exposure based on the yawing information. As a manufacturing method of a semiconductor device, A method of manufacturing a semiconductor device, comprising the step of transferring the pattern of the mask onto the object to be exposed using the scanning exposure apparatus according to any one of claims 5 to 10. As a manufacturing method of a semiconductor device, A method of manufacturing a semiconductor device, comprising the step of transferring the pattern of the mask onto the object to be exposed using the scanning exposure method according to any one of claims 11 to 15.