JPWO2015118982A1 - 電子部品モジュール、および電子部品モジュールの製造方法 - Google Patents
電子部品モジュール、および電子部品モジュールの製造方法 Download PDFInfo
- Publication number
- JPWO2015118982A1 JPWO2015118982A1 JP2015560928A JP2015560928A JPWO2015118982A1 JP WO2015118982 A1 JPWO2015118982 A1 JP WO2015118982A1 JP 2015560928 A JP2015560928 A JP 2015560928A JP 2015560928 A JP2015560928 A JP 2015560928A JP WO2015118982 A1 JPWO2015118982 A1 JP WO2015118982A1
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- copper
- component module
- particle
- external terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13164—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13194—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/131 - H01L2224/13191
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13399—Coating material
- H01L2224/13486—Coating material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/13487—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/165—Material
- H01L2224/16501—Material at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/2732—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/29486—Coating material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29487—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81054—Composition of the atmosphere
- H01L2224/81075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81359—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/8184—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10015—Non-printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Nanotechnology (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
そして、表面実装型の電子部品(以下、単に電子部品という)を回路基板上に実装するにあたって、導電性の接合材料を用いて電子部品の外部端子を、回路基板に配設された実装用電極(接続対象)に機械的、電気的に接続することが行われている。
特許文献1はその他にも、上記焼結性接合材料を用いて電子部品を接合する場合に、電子部品を接合する方向に加圧しながら焼結熱処理を施すことを開示している。
電子部品が備える外部端子が、接合材料を介して、接続対象に電気的および機械的に接続された構造を有する電子部品モジュールであって、
前記接合材料は、
粒径分布の粒径ピークが0.1〜5.0μmの範囲にあるとともに、焼結前の平均結晶子径が30〜100nmの範囲にあり、かつ、凝集を抑制する分散剤を粒子表面に有していない銅粒子と、
前記銅粒子を焼結させる際の焼成温度で還元作用を奏する有機化合物と、
を含有する銅粒子ペーストを焼結させることにより形成されたものであること
を特徴としている。
焼結後の平均結晶子径が60〜150nmとなるようにすることにより、安定した銅焼結体が形成される。
銅粒子を焼結させるための焼成温度で還元作用を奏する有機化合物として、ヒドロキシ基を有する有機化合物を用いることにより、焼成工程で銅粒子の表面に形成されている酸化物膜を除去すること、焼成工程で銅が酸化されることなく確実に焼結されるようにすることが可能になり、本発明をより実効あらしめることができる。
上記群からなる少なくとも1種を用いることにより、本発明をより実効あらしめることができる。
本発明の方法で電子部品の外部端子を回路基板上の実装用電極に接続することにより、例えば、ICチップや積層セラミックコンデンサなどの表面実装型の電子部品が回路基板上に搭載された構造を有する、信頼性の高い電子部品モジュールを確実に製造することが可能になる。
本発明の方法で電子部品の外部端子を金属端子に取り付けることにより、信頼性の高い端子付き電子部品モジュールを確実に製造することが可能になる。
電子部品が備える外部端子が、接合材料を介して接続対象に電気的および機械的に接続された構造を有する電子部品モジュールの製造方法であって、
前記電子部品の前記外部端子が、粒径分布の粒径ピークが0.1〜5.0μmの範囲にあるとともに、焼結前の平均結晶子径が30〜100nmの範囲にあり、かつ、凝集を抑制する分散剤を粒子表面に有していない銅粒子と、前記銅粒子を焼結させる際の焼成温度で還元作用を奏する有機化合物と、を含有する銅粒子ペーストを介して前記接続対象と対向するように、前記電子部品と前記接合対象とを位置させる工程と、
熱処理を行って前記銅粒子ペーストに含まれる前記銅粒子を焼結させることにより、銅粒子の平均結晶子径が60〜150nmである銅焼結体を形成し、前記電子部品の前記外部端子と前記接続対象とを、前記銅焼結体を介して接合する工程と
を備えていることを特徴としている。
不活性雰囲気で熱処理することにより、さらに確実に銅粒子ペーストを構成する銅粒子を焼結させることが可能になり、本発明をより実効あらしめることができる。
図1A〜図1Dは、銅粒子の焼結のプロセスを模式的に示す図である。
上記の銅粒子ペーストを構成する銅粒子は、このようなメカニズムにより、低温でも効率よく焼結させることができる。
本発明の実施形態1にかかる電子部品モジュールは、電子部品が備える外部端子が、銅粒子ペーストを焼結することにより形成される接合材料を介して、接続対象に電気的および機械的に接続された構造を有する電子部品モジュールである。
接合材料となる銅粒子ペーストを作製するにあたって、まず銅粒子として粒度分布の粒径ピークが0.1〜5.0μmの範囲にあり、かつ、焼結前の平均結晶子径が30〜100nmの範囲にある銅粒子を用意した。
(1)接合強度
上述のようにして作製した銅粒子ペーストを用いて、以下に説明する方法で、無酸素銅試料片どうしを接合し、接合強度を調べた。
その結果、シェア強度として、36MPaの高強度が得られることが確認された。
焼成前の平均結晶子径は、銅粒子ペーストをガラス板上にインクを塗布し、上述の方法、すなわち、X線回折測定を行って得たピーク<111>、<200>、<311>の3つのピークから、リートベルト法により結晶子径を算出しその平均値を求める方法で測定した。焼成後の平均結晶子径は、シェアした後の焼結体を、ピンセットを用いて抽出し、ガラス板に載せて、上述の方法、すなわち、X線回折測定を行って得たピーク<111>、<200>、<311>の3つのピークから、リートベルト法により結晶子径を算出しその平均値を求める方法で測定した。
これに対して、図4A、図4Bからわかるように、平均結晶子径が56.7nmの銅粒子10を用いた本発明の要件において規定されている範囲内にある銅粒子ペーストの場合、銅粒子10がネック成長すること、すなわち十分に焼結することが確認された。
上述の銅粒子ペーストにおいて、銅粒子を焼結させる際の焼成温度で還元作用を奏する有機化合物(溶剤)として用いたトリエタノールアミンの還元性を、以下の方法で調べた。
この電子部品モジュール30は、図7に示すように、ICチップ(本発明における電子部品)31の表面電極32上に形成された金バンプ(外部端子)33が、銅焼結体(接合材料)34を介して、回路基板35に形成された、例えば銅からなる実装用電極(接続対象)36上に、電気的および機械的に接続されているとともに、ICチップ(電子部品)31が封止樹脂37により封止された構造を有する電子部品モジュールである。
また、表面電極32上に金バンプ(外部端子)33が形成されたICチップ(本発明における電子部品)31を用意する。
図8は、本発明の実施形態(実施形態2)にかかる電子部品モジュールを示す図である。
この電子部品モジュール40は、図8に示すように、積層セラミックコンデンサ41が備える銅からなる外部端子42が、銅焼結体(接合材料)44を介して、回路基板(アルミナ基板)45に形成された銅からなる実装用電極(本発明における接続対象)46に、電気的および機械的に接続された構造を有する電子部品モジュールである。
図9より、回路基板45上の銅からなる実装用電極46に対して、積層セラミックコンデンサ41の銅からなる外部端子42が、銅焼結体44からなる接合材料を介して接合されていることがわかる。
図10は、本発明の他の実施形態(実施形態3)にかかる金属端子付きの電子部品(広義の電子部品モジュール)を示す図である。
なお、金属端子は上述のような構成のものに限られるものではなく、他の電子部品の一部を構成する金属端子であってもよい。その場合も同様の効果を得ることができる。金属端子53の構成材料に特別の制約はなく、金、銀、銅、銀−パラジウム、ニッケルなどからなるものを用いることが可能である。
(a)多層セラミック基板の内部に配設される内蔵部品の接続材料、
(b)層間接続のためのビアホール導体形成用材料、
(c)配線や電極を形成するための電極形成用材料、
(d)導電性封止材料、
(e)ダイボンド用の接続材料
などの用途にも適用することが可能である。
11 結晶子
12 酸化膜(銅酸化物)
13 還元作用を奏する有機化合物(溶剤)
21 第1の無酸素銅試料片
22 第2の無酸素銅試料片
23 銅粒子ペーストを焼成してなる銅焼結体
24 シェアツール
30 電子部品モジュール
31 ICチップ(電子部品)
32 表面電極
33 金バンプ(外部端子)
34 銅焼結体(接合材料)
35 回路基板
36 実装用電極(接続対象)
37 封止樹脂
40 電子部品モジュール
41 積層セラミックコンデンサ
42 外部端子
44 銅焼結体(接合材料)
45 回路基板(アルミナ基板)
46 実装用電極(接続対象)
50 電子部品
51 電子部品素子
52 外部電極
53 金属端子
54 銅焼結体(接合材料)
Claims (9)
- 電子部品が備える外部端子が、接合材料を介して、接続対象に電気的および機械的に接続された構造を有する電子部品モジュールであって、
前記接合材料は、
粒径分布の粒径ピークが0.1〜5.0μmの範囲にあるとともに、焼結前の平均結晶子径が30〜100nmの範囲にあり、かつ、凝集を抑制する分散剤を粒子表面に有していない銅粒子と、
前記銅粒子を焼結させる際の焼成温度で還元作用を奏する有機化合物と、
を含有する銅粒子ペーストを焼結させることにより形成されたものであること
を特徴とする電子部品モジュール。 - 前記接合材料は、焼結後の銅粒子の平均結晶子径が60〜150nmの範囲にある銅焼結体であること
を特徴とする請求項1記載の電子部品モジュール。 - 前記有機化合物がヒドロキシ基を有する有機化合物であることを特徴とする請求項1または2記載の電子部品モジュール。
- 前記有機化合物がトリエタノールアミン、グリセリン、エチレングリコール、トリエチレングリコール、ジエチレングリコール、ジプロピレングリコールからなる群より選ばれる少なくとも1種を含むことを特徴とする請求項1〜3のいずれかに記載の電子部品モジュール。
- 前記接続対象が、回路基板に配設された実装用電極であることを特徴とする請求項1〜4のいずれかに記載の電子部品モジュール。
- 前記接続対象が、前記外部端子に取り付けられた金属端子であることを特徴とする請求項1〜4のいずれかに記載の電子部品モジュール。
- 電子部品が備える外部端子が、接合材料を介して接続対象に電気的および機械的に接続された構造を有する電子部品モジュールの製造方法であって、
前記電子部品の前記外部端子が、粒径分布の粒径ピークが0.1〜5.0μmの範囲にあるとともに、焼結前の平均結晶子径が30〜100nmの範囲にあり、かつ、凝集を抑制する分散剤を粒子表面に有していない銅粒子と、前記銅粒子を焼結させる際の焼成温度で還元作用を奏する有機化合物と、を含有する銅粒子ペーストを介して前記接続対象と対向するように、前記電子部品と前記接合対象とを位置させる工程と、
熱処理を行って前記銅粒子ペーストに含まれる前記銅粒子を焼結させることにより、銅粒子の平均結晶子径が60〜150nmである銅焼結体を形成し、前記電子部品の前記外部端子と前記接続対象とを、前記銅焼結体を介して接合する工程と
を備えていることを特徴とする電子部品モジュールの製造方法。 - 前記電子部品の前記外部端子が、前記銅粒子ペーストを介して前記接続対象と対向するように前記電子部品を前記接合対象上に載置した状態で、外部から力を加えることなく前記熱処理を行うことを特徴とする請求項7記載の電子部品モジュールの製造方法。
- 前記熱処理を、不活性雰囲気中で実施することを特徴とする請求項7または8記載の電子部品モジュールの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014019212 | 2014-02-04 | ||
JP2014019212 | 2014-02-04 | ||
PCT/JP2015/052018 WO2015118982A1 (ja) | 2014-02-04 | 2015-01-26 | 電子部品モジュール、および電子部品モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015118982A1 true JPWO2015118982A1 (ja) | 2017-03-23 |
JP6337909B2 JP6337909B2 (ja) | 2018-06-06 |
Family
ID=53777789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015560928A Active JP6337909B2 (ja) | 2014-02-04 | 2015-01-26 | 電子部品モジュールの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9860989B2 (ja) |
EP (1) | EP3104400B1 (ja) |
JP (1) | JP6337909B2 (ja) |
CN (1) | CN106170851B (ja) |
WO (1) | WO2015118982A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107848075B (zh) | 2015-09-15 | 2021-03-19 | 株式会社村田制作所 | 接合用构件、接合用构件的制造方法和接合方法 |
JP6528852B2 (ja) | 2015-09-28 | 2019-06-12 | 株式会社村田製作所 | ヒートパイプ、放熱部品、ヒートパイプの製造方法 |
CN108028206B (zh) | 2015-10-02 | 2021-08-24 | 三井金属矿业株式会社 | 粘结接合结构 |
WO2017077824A1 (ja) * | 2015-11-05 | 2017-05-11 | 株式会社村田製作所 | 接合用部材、および、接合用部材の製造方法 |
JP6565710B2 (ja) * | 2016-01-27 | 2019-08-28 | 三菱マテリアル株式会社 | 銅部材接合体の製造方法 |
JP2017152638A (ja) * | 2016-02-26 | 2017-08-31 | 株式会社村田製作所 | 接合構造、該接合構造を備えた電子部品、および該接合構造の形成方法 |
WO2018074188A1 (ja) * | 2016-10-19 | 2018-04-26 | 株式会社村田製作所 | インダクタ部品、インダクタ部品の製造方法 |
JP6766960B2 (ja) | 2017-05-26 | 2020-10-14 | 株式会社村田製作所 | 多層配線基板、電子機器、及び、多層配線基板の製造方法 |
CN112771628B (zh) | 2018-09-28 | 2022-09-13 | 纳美仕有限公司 | 导电性糊剂 |
JP7170968B2 (ja) * | 2019-02-22 | 2022-11-15 | 株式会社大阪ソーダ | 導電性接着剤を用いる接合方法 |
WO2020202971A1 (ja) * | 2019-03-29 | 2020-10-08 | 三井金属鉱業株式会社 | 接合材料及び接合構造 |
CN110202137B (zh) * | 2019-05-29 | 2021-07-20 | 深圳第三代半导体研究院 | 一种低温烧结铜膏及其烧结工艺 |
US20240081336A1 (en) * | 2019-09-16 | 2024-03-14 | Corning Incorporated | Color stabilization of biocidal coatings |
KR20190116175A (ko) * | 2019-09-18 | 2019-10-14 | 삼성전기주식회사 | 전자 부품 및 그 실장 기판 |
JP7380256B2 (ja) * | 2020-01-28 | 2023-11-15 | 三菱マテリアル株式会社 | 接合用シート |
JPWO2023189513A1 (ja) * | 2022-03-30 | 2023-10-05 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09198920A (ja) * | 1996-01-22 | 1997-07-31 | Mitsuboshi Belting Ltd | 銅導体ペースト及び該銅導体ペーストを印刷した基板 |
JP2004265607A (ja) * | 2003-01-23 | 2004-09-24 | Matsushita Electric Ind Co Ltd | 導電性ペースト、その導電性ペーストを用いた回路形成基板、およびその製造方法 |
JP2011219862A (ja) * | 2010-03-26 | 2011-11-04 | Furukawa Electric Co Ltd:The | 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材 |
JP2013091835A (ja) * | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
WO2016031619A1 (ja) * | 2014-08-29 | 2016-03-03 | 三井金属鉱業株式会社 | 導電体の接続構造及びその製造方法、導電性組成物並びに電子部品モジュール |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4859364A (en) * | 1988-05-25 | 1989-08-22 | E. I. Du Pont De Nemours And Company | Conductive paste composition |
US5180523A (en) * | 1989-11-14 | 1993-01-19 | Poly-Flex Circuits, Inc. | Electrically conductive cement containing agglomerate, flake and powder metal fillers |
US5652042A (en) * | 1993-10-29 | 1997-07-29 | Matsushita Electric Industrial Co., Ltd. | Conductive paste compound for via hole filling, printed circuit board which uses the conductive paste |
US6679937B1 (en) * | 1997-02-24 | 2004-01-20 | Cabot Corporation | Copper powders methods for producing powders and devices fabricated from same |
US6139777A (en) * | 1998-05-08 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | Conductive paste for filling via-hole, double-sided and multilayer printed circuit boards using the same, and method for producing the same |
EP1050888B1 (en) * | 1998-08-28 | 2010-10-06 | Panasonic Corporation | Conductive paste, conductive structure using the same, electronic part, module, circuit board, method for electrical connection, method for manufacturing circuit board, and method for manufacturing ceramic electronic part |
US6620344B2 (en) * | 1999-05-28 | 2003-09-16 | Dowa Mining Co., Ltd. | Copper particle clusters and powder containing the same suitable as conductive filler of conductive paste |
JP2002110444A (ja) * | 2000-09-26 | 2002-04-12 | Murata Mfg Co Ltd | 導電性ペーストおよび積層セラミック電子部品 |
JP3854103B2 (ja) * | 2001-06-28 | 2006-12-06 | 住友ベークライト株式会社 | 導電性ペースト及び該ペーストを用いてなる半導体装置 |
JP4298597B2 (ja) | 2004-07-01 | 2009-07-22 | 日東電工株式会社 | 配線回路基板および配線回路基板の製造方法 |
KR100702595B1 (ko) * | 2005-07-22 | 2007-04-02 | 삼성전기주식회사 | 금속 나노 입자 및 이의 제조방법 |
JP4687599B2 (ja) | 2006-07-26 | 2011-05-25 | 住友金属鉱山株式会社 | 銅微粉とその製造方法及び導電性ペースト |
JP5525301B2 (ja) | 2010-03-24 | 2014-06-18 | 国立大学法人東北大学 | 金属微粒子・金属酸化物微粒子の製造方法、金属微粒子・金属酸化物微粒子、並びに金属含有ペーストおよび金属膜・金属酸化物膜 |
JP2012038790A (ja) | 2010-08-04 | 2012-02-23 | Hitachi Ltd | 電子部材ならびに電子部品とその製造方法 |
JP5557698B2 (ja) | 2010-11-04 | 2014-07-23 | 株式会社日立製作所 | 焼結接合剤、その製造方法およびそれを用いた接合方法 |
JP5967489B2 (ja) * | 2011-04-04 | 2016-08-10 | パナソニックIpマネジメント株式会社 | 実装構造体 |
JP2013008907A (ja) | 2011-06-27 | 2013-01-10 | Hitachi Chem Co Ltd | 導電性ペースト用酸化銅粉末、導電性ペースト用酸化銅粉末の製造方法、導電性ペースト及びこれを用いて得られる銅配線層 |
EP2923781A4 (en) * | 2012-11-26 | 2016-07-13 | Mitsui Mining & Smelting Co | COPPER POWDER AND PROCESS FOR PRODUCING THE SAME |
-
2015
- 2015-01-26 CN CN201580007207.4A patent/CN106170851B/zh active Active
- 2015-01-26 JP JP2015560928A patent/JP6337909B2/ja active Active
- 2015-01-26 EP EP15746474.4A patent/EP3104400B1/en active Active
- 2015-01-26 WO PCT/JP2015/052018 patent/WO2015118982A1/ja active Application Filing
-
2016
- 2016-08-01 US US15/225,379 patent/US9860989B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09198920A (ja) * | 1996-01-22 | 1997-07-31 | Mitsuboshi Belting Ltd | 銅導体ペースト及び該銅導体ペーストを印刷した基板 |
JP2004265607A (ja) * | 2003-01-23 | 2004-09-24 | Matsushita Electric Ind Co Ltd | 導電性ペースト、その導電性ペーストを用いた回路形成基板、およびその製造方法 |
JP2011219862A (ja) * | 2010-03-26 | 2011-11-04 | Furukawa Electric Co Ltd:The | 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材 |
JP2013091835A (ja) * | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
WO2016031619A1 (ja) * | 2014-08-29 | 2016-03-03 | 三井金属鉱業株式会社 | 導電体の接続構造及びその製造方法、導電性組成物並びに電子部品モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20160338201A1 (en) | 2016-11-17 |
JP6337909B2 (ja) | 2018-06-06 |
US9860989B2 (en) | 2018-01-02 |
CN106170851B (zh) | 2019-03-08 |
EP3104400A1 (en) | 2016-12-14 |
CN106170851A (zh) | 2016-11-30 |
EP3104400A4 (en) | 2017-11-15 |
EP3104400B1 (en) | 2022-08-31 |
WO2015118982A1 (ja) | 2015-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6337909B2 (ja) | 電子部品モジュールの製造方法 | |
JP6153077B2 (ja) | 金属ナノ粒子ペースト、それを含有する接合材料、およびそれを用いた半導体装置 | |
KR20130061671A (ko) | 도전성 페이스트, 및 이 페이스트로부터 얻어지는 도전접속부재 | |
EP3217424B1 (en) | Electroconductive assembly for electronic component, semiconductor device in which said assembly is used, and method for manufacturing electroconductive assembly | |
JP6372978B2 (ja) | 導電性ペースト | |
JPWO2013133085A1 (ja) | 銀微粒子焼結体 | |
JP6032110B2 (ja) | 金属ナノ粒子材料、それを含有する接合材料、およびそれを用いた半導体装置 | |
TW201942372A (zh) | 銅糊、接合方法以及接合體之製造方法 | |
JP5733638B2 (ja) | 接合材料およびそれを用いた半導体装置、ならびに配線材料およびそれを用いた電子素子用配線 | |
CN114829036B (zh) | 银膏及接合体的制造方法 | |
KR20210068468A (ko) | 접합 재료용 입자 및 그 제조 방법, 접합용 페이스트 및 그 조제 방법, 그리고 접합체의 제조 방법 | |
JP6851810B2 (ja) | 加熱接合材及び電気電子機器の製造方法 | |
WO2014002949A1 (ja) | 接合基板及びその製造方法ならびに接合基板を用いた半導体モジュール及びその製造方法 | |
TWI808208B (zh) | 用於燒結黏晶及類似應用之奈米銅糊及膜及製造燒結粉末的方法 | |
JP7317397B2 (ja) | 酸化銅ペースト及び電子部品の製造方法 | |
JP2006120973A (ja) | 回路基板および回路基板の製造方法 | |
JP2017152638A (ja) | 接合構造、該接合構造を備えた電子部品、および該接合構造の形成方法 | |
JP7024671B2 (ja) | 接合用ペーストを用いて被接合部材を接合する方法 | |
JP7024670B2 (ja) | 接合用ペーストを用いて被接合部材を接合する方法 | |
US20210050319A1 (en) | Metal particle aggregates, method for producing same, paste-like metal particle aggregate composition, and method for producing bonded body using said paste-like metal particle aggregate composition | |
TWI789698B (zh) | 氧化銅糊料及電子零件之製造方法 | |
WO2021060126A1 (ja) | 接合材、接合材の製造方法、接合方法及び半導体装置 | |
JP2023092937A (ja) | 銀ペースト、および、接合体の製造方法 | |
CN116806177A (zh) | 接合用浆料、接合层、接合体及接合体的制造方法 | |
CN111033703A (zh) | 安装结构体以及纳米粒子安装材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180410 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180423 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6337909 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |