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JPWO2002073672A1 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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JPWO2002073672A1
JPWO2002073672A1 JP2002572623A JP2002572623A JPWO2002073672A1 JP WO2002073672 A1 JPWO2002073672 A1 JP WO2002073672A1 JP 2002572623 A JP2002572623 A JP 2002572623A JP 2002572623 A JP2002572623 A JP 2002572623A JP WO2002073672 A1 JPWO2002073672 A1 JP WO2002073672A1
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substrate
air knife
wet
liquid
processing
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水川　茂
茂 水川
中田　勝利
勝利 中田
松元　俊二
俊二 松元
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Sumitomo Precision Products Co Ltd
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Sumitomo Precision Products Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023—Cleaning travelling work
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B15/00—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form
    • F26B15/10—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions
    • F26B15/12—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions the lines being all horizontal or slightly inclined
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/14—Drying solid materials or objects by processes not involving the application of heat by applying pressure, e.g. wringing; by brushing; by wiping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本発明は、搬送手段によって基板を搬送しながら、基板に湿式および乾式の処理を順次施す基板処理装置に関する。この基板処理装置は、基板Ｗを搬送する搬送機構１と、搬送される基板Ｗに対し湿式の処理を施す湿式処理部ＷＥＴと、湿式処理部ＷＥＴより搬送方向下流側に配設され、処理液を膜状に形成して基板Ｗ上に供給する膜液供給機構４と、スリット状の開口部を具備し、この開口部が基板Ｗの全幅にわたって対峙するように、膜液供給機構４の搬送方向下流側に配設され、開口部から気体を噴出させて板状の気流を生じさせる気体噴出機構６とから構成される。The present invention relates to a substrate processing apparatus that sequentially performs wet and dry processes on a substrate while transporting the substrate by a transport unit. The substrate processing apparatus is provided with a transport mechanism 1 for transporting a substrate W, a wet processing unit WET for performing a wet process on the substrate W to be transported, and a processing liquid disposed downstream of the wet processing unit WET in the transport direction. And a slit-shaped opening, which is provided on the substrate W and transports the film liquid so that the opening faces the entire width of the substrate W. And a gas ejection mechanism 6 that ejects gas from the opening to generate a plate-like airflow.

Description

技術分野
この発明は、搬送手段によって基板を搬送しながら、基板に湿式および乾式の処理を順次施す基板処理装置に関し、とくに、基板乾燥の均一性に優れた基板処理装置に関する。
背景技術
従来より、液晶表示器、フォトマスク等のガラス基板や、プリント配線基板、半導体ウエハ等の基板を製造する工程では、基板表面に各種処理液を供給し該処理液によって基板表面を処理した後、これを基板表面から除去するといった処理が行われている。
たとえば、基板の洗浄を行なう工程では、洗浄装置を用い、純水等の処理液を基板の表面に浴びせかけてこれを洗浄した後、乾燥装置内で、乾燥用の気体を基板表面に吹きつけ、当該基板表面に付着した処理液を除去している。
このような洗浄装置および乾燥装置は、これらが搬送手段を介し一体的に連結されて、基板処理装置として構成されており、通常、洗浄装置と乾燥装置との間は、基板を搬入，搬出するための開口部を備えた壁によって仕切られている。
ところが、前記洗浄装置内では、スプレーノズルから霧状の洗浄液が基板に対し噴霧されるようになっているため、噴霧された洗浄液のミストが前記開口部を通して乾燥装置内に侵入し易く、このため、乾燥装置内に侵入したミストが基板に付着して、基板表面に点状の染みを生じ易い。
そこで、従来、洗浄装置と乾燥装置との間に一定の間隔をあけてこれらを設置し、ミストが乾燥装置内に侵入するのを防止している。
しかしながら、このように構成された上記従来の基板処理装置においても、依然として以下に説明するような問題があった。
即ち、前記洗浄装置によって洗浄された後の基板表面は、当該表面上に供給された洗浄液が自然流下して表面上から除去され、洗浄液の液溜りが島状に点在した状態となる。そして、このように液溜りが島状に点在した状態のまま乾燥用気体を用いて基板を乾燥させると、島状の液溜りが除去，乾燥される際に同部に染みを生じてしまうのである。
特に、近年では基板が大型化しており、かかる大型の基板では、上述した島状の液溜りを生じ易く、問題である。
本発明は、以上の問題に鑑みなされたものであり、基板表面に染みが生じないように、当該基板表面から処理液を除去してこれを乾燥させることができ、しかも装置の小型化が可能な基板処理装置の提供を目的とする。
発明の開示
本発明は、基板を略水平に搬送する搬送手段と、前記搬送手段によって搬送される基板に対し湿式の処理を施す湿式処理部と、前記湿式処理部より搬送方向下流側に配設され、処理液を膜状（カーテン状）に形成した膜液を前記基板上に供給する膜液供給手段と、スリット状の開口部を具備し、該開口部が前記基板の全幅にわたって対峙するように、前記膜液供給手段の前記搬送方向下流側に配設され、前記開口部から気体を噴出させて板状の気流を生じさせる気体噴出手段とを設けて構成したことを特徴とする基板処理装置に係る。
本発明に係る上記基板処理装置によれば、まず、湿式処理部から排出された基板上に、膜液供給手段によって膜状に形成された処理液が供給される。これにより、前記搬送方向及びこれと直交する方向に均質な膜厚の処理液がムラなく、即ち、島状の液溜りを生じることなく基板上に塗布される。
このようにして基板上に塗布された処理液は、次に、膜液供給手段の搬送方向下流側に設けられた気体噴出手段の直下に至ると、この気体噴出手段から噴出される板状の気流によって基板上から除去され、即ち、液切りが行われ、当該基板が乾燥せしめられる。
このように、この基板処理装置によれば、基板上に均質な膜厚の処理液が塗布された状態、即ち、基板上に島状の液溜りが生じていない状態で、液切りを行うようにしているので、従来問題となっていた液切りの際の染みの発生を根本的に防止することができる。
また、気体噴出手段より搬送方向上流側に膜液供給手段を設けたので、湿式処理部で発生するミストをこの膜液によって完全に遮断することができる。したがって、液切り，乾燥後の基板表面にミストが付着するのを効果的に防止することができ、かかるミストに起因した染みの発生皆無にすることが可能である。このため、湿式処理部と気体噴出手段との間の距離を長くとる必要がなく、装置の小型化を図ることができる。
なお、前記気体噴出手段は、その開口部長手方向が前記搬送方向と直交する方向に対して傾斜するように配設されているのが好ましい。このようにすれば、気体噴出手段から噴出される気流によって、処理液を基板の側辺に向けて押し流すことができ、スムーズに基板上から除去することができる。
また、基板の下側にも同様に前記気体噴出手段を設けても良い。
また、前記気体噴出手段の開口部と前記基板との間の距離は、これを１ｍｍ以上５ｍｍ以下とするのが好ましい。開口部と基板との距離が１ｍｍ未満であると、基板上に塗布された処理液に開口部が触れるおそれがある一方、５ｍｍを超えると乾燥効果が薄れるからである。
また、前記気体噴出手段は、その複数を前記搬送方向に沿って並設した構成としても良い。このようにすれば、基板の乾燥効果をより高めることができる。
発明を実施するための最良の形態
以下、本発明をより詳細に説明するために、添付図面に基づいてこれを説明する。
第１図に示すように、本発明にかかる基板処理装置は、基板Ｗを矢示１０方向に水平搬送する搬送手段１と、この搬送手段１によって搬送される基板Ｗに対して湿式の処理を行う湿式処理部ＷＥＴと、乾式の処理を行う乾式処理部ＤＲＹと、湿式処理部ＷＥＴと乾式処理部ＤＲＹとの間に配設された膜液供給手段４、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８および第２下エアナイフ９などを備えてなる。
なお、前記湿式処理部ＷＥＴ、膜液供給手段４、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８、第２下エアナイフ９及び乾式処理部ＤＲＹは２つの側壁１５，１５、底板１７および上板１７からなるカバー体内に収納されている。また、膜液供給手段４は、エアナイフ（本例では、第１上エアナイフ６および第１下エアナイフ７）の搬送方向上流側に配設されている。
搬送手段１は、大径の搬送ローラＲと補助ローラｒとを備えて構成される。搬送ローラＲは、第２図に示されるように、前記両側壁１５，１５間に横架されたシャフト１１に適宜な間隔を設けて複数個設けられており、シャフト１１の両端は、軸受によって回動可能に支持されている。また、このシャフト１１の一端は、一方の側壁１５より外部に突出して、側壁１５の外部に設けられたローラ駆動装置１２に連結されている。斯くして、搬送ローラＲは、ローラ駆動装置１２により駆動されて基板Ｗを矢示１０方向に搬送する。
また、補助ローラｒは、基板Ｗの搬送方向に沿って、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９の近傍に短間隔で複数個設けられており、支持プレート２１，２３，２５上にそれぞれ配設された支持部材２２，２４，２６によって、適宜回動自在に支持されている。このように、補助ローラｒを多数配設することで、基板Ｗの歪やたわみなどを防止して、基板Ｗの平面度を高精度なものとし、膜液供給手段４によって基板Ｗ上に供給された処理液の層が不均一となるのを防止することができる。なお、支持プレート２１，２３，２５は、前記両側壁１５，１５に適宜固設されている。
湿式処理部ＷＥＴには、処理液を基板Ｗの上面および／または下面に供給する処理液供給手段（図示せず）が設けられている。この処理液供給手段（図示せず）は、基板Ｗの上方および／または下方に配設された配管（図示せず）と、この配管（図示せず）に連結された複数のシャワーノズル（図示せず）を備えており、処理液を供給する適宜処理液供給源（図示せず）に接続されている。なお、シャワーノズル（図示せず）は、その各噴霧領域が全体として基板Ｗの幅方向全域をカバーするように配置されている。また、図示しないが、底板１６には集液部が形成され、この集液部には排液管が接続されており、集液部に集められた処理液が排液管を通して外部に排出されるようになっている。
膜液供給手段４は、第２図に示されるように、液体供給源４０から供給される処理液を膜状（カーテン状）にして基板Ｗ上の全幅にわたって流下させるように構成されている。
また、基板Ｗの下方位置であって、当該基板Ｗを挟んで前記膜液供給手段４と対向する位置には、基板Ｗの下面に向けて処理液を噴射する処理液噴射手段５が設けられている。なお、膜液供給手段４および液体噴射手段５から供給される処理液は、通常純水であるが、これに限らず各種の処理液を適用することができる。
第１上エアナイフ６及び第１下エアナイフ７は、基板Ｗを挟んで相互に対向するように上下に並設され、また、第２上エアナイフ８及び第２下エアナイフ９も同様に、基板Ｗを挟んで相互に対向するように上下に並設されており、各吹き出し口６１から乾燥気体を噴出して板状の気流を生じさせ、基板Ｗの上下面に付着した処理液を除去する。
これら、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９は、その各長手方向Ｌが基板Ｗの搬送方向と直交する方向、即ち、基板Ｗの幅方向Ｈに対して傾斜するように配置されており、各吹き出し口６１が基板Ｗの全幅にわたって対峙するように構成されている。
以下、上記第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９の具体的な構成について、第４図〜第６図に基づいて説明する。なお、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９は、それぞれ同じ構成となっている。したがって、以下では、第１上エアナイフ６を代表としてその構成を説明する。
第４図に示されるように、前記第１上エアナイフ６は、長尺状の本体６４に前板６３をねじ６５で締結し、これら前板６３、本体６４のあいだに形成される幅広のスリット６６の幅Ｍを調整可能にしたものである。なお、スリット６６の開口部が前記吹き出し口６１となっている。
また、本体６４内には、気体室６７、気体供給路６８が形成されており、この気体供給路６８が気体供給源６０に接続している。また、特に、図示しないが、気体供給路６８と気体供給源６０との間には流量調整機構やエアフィルタなどが介在している。
第５図及び第６図に示すように、前記スリット６６、気体室６７および気体供給路６８は、これらを１組として構成されるブロックＢが長手方向Ｌに直列に連結された構成となっており、各気体供給路６８にそれぞれ気体供給源６０から気体が供給される。また、各スリット６６および気体室６７は、それぞれ長手方向Ｌに沿って形成され、各スリット６６は隣接するスリット６６と相互に連通している。また、気体供給路６８は、ブロックＢの略中央に上方から気体室６７に向けて直線的に形成されている。このように、ブロックＢを連結した構成とすることにより、幅の広い長尺の基板Ｗに対し容易に対応することが可能となる。
以上の構成を備えた第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９は、第１図に示すように、それぞれ基板Ｗの法線方向に対して、搬送方向下流側に角度θ１だけ傾いた状態で固定されている。このように、傾斜させることで、基板Ｗに付着した処理液が搬送方向上流側に向けて吹き飛ばされる。
また、第１図において、第１上エアナイフ６及び第２上エアナイフ８については、説明の便宜上、角度調整用の目盛り板６２の図示を省略しているが、第１上エアナイフ６及び第２上エアナイフ８も第１下エアナイフ７及び第２下エアナイフ９と同様に角度調整用の目盛り板６２を備えており、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９は、それぞれ、角度調整用の目盛り板６２を用いることによって、前記傾斜角θ１の角度調整を行うことができるようになっている。
また、図示しないが、第１上エアナイフ６、第１下エアナイフ７、第２上エアナイフ８及び第２下エアナイフ９の両端は、それぞれ上下方向に移動可能に適宜支柱に取り付けられており、基板Ｗとの間の距離を調節することができるようになっている。
なお、第１上エアナイフ６及び第２エアナイフ８の吹き出し口６１と、基板Ｗとの間の距離は、１ｍｍ以上５ｍｍ以下の範囲であるのが好ましい。吹き出し口６１と基板Ｗとの距離が１ｍｍ未満であると、基板Ｗ上に塗布された処理液に吹き出し口６１が触れるおそれがあり、５ｍｍを超えると乾燥効果が薄れるからである。また、前記傾斜角θ１は、１５度以上６０度以下であることが、ムラがなく、液の飛び散りもない安定した境界面を形成することができるという観点から好ましい。
また、特に図示しないが、前記側壁１５，１５、底板１７および上板１７によって囲まれた室には、適宜排気機構が接続されており、この排気機構によって前記室内の気体が排気されるようになっている。
以上の構成を備えた本例の基板処理装置によれば、搬送手段１によって搬送され、湿式処理部ＷＥＴから排出された基板Ｗ上に、膜液供給手段４から膜状に形成された処理液が供給される。これにより、前記搬送方向及びこれと直交する方向に均質な膜厚の処理液がムラなく、即ち、島状の液溜りを生じることなく基板Ｗ上に塗布される。
一方、基板Ｗの下面には、処理液噴射手段５から処理液が吹き付けられ、当該下面が洗浄される。
そして、基板Ｗが更に搬送されると、これが前記第１上エアナイフ６と、第１下エアナイフ７との間に至り、第１上エアナイフ６から噴出される板状の気流によって、第３図に示す如く、基板Ｗ上の処理液が矢示１３方向に押されて除去され、当該基板Ｗの上面が乾燥せしめられる。
一方、基板Ｗの下面は、第１下エアナイフ７から噴出される板状の気流によって、当該下面に付着した水滴が除去され、乾燥せしめられる。
そして、基板Ｗが更に矢示１０方向に搬送されると、その上下面がそれぞれ第２上エアナイフ８および第２下エアナイフ９によって乾燥せしめられ、乾燥後の基板Ｗが乾式処理部ＤＲＹに搬入される。
このように、この基板処理装置によれば、基板Ｗ上に均質な膜厚の処理液を塗布した状態、即ち、基板上に島状の液溜りが生じていない状態で、液切りを行うようにしているので、従来問題となっていた液切りの際の染みの発生を根本的に防止することができる。
また、第１上エアナイフ６より搬送方向上流側に膜液供給手段４を設けたので、湿式処理部で発生するミストをこの膜液によって完全に遮断することができる。したがって、液切り，乾燥後の基板Ｗ表面にミストが付着するのを効果的に防止することができ、かかるミストに起因した染みの発生皆無にすることが可能である。このため、湿式処理部ＷＥＴと第１上エアナイフ６との間の距離を長くとる必要がなく、装置の小型化を図ることができる。
また、第１上エアナイフ６を傾斜した状態に配置しているので、処理液を基板Ｗの側辺に向けて押し流すことができ、これをスムーズに基板Ｗ上から除去することができる。
産業上の利用可能性
以上のように、本発明にかかる基板処理装置は、液晶表示器、フォトマスク等のガラス基板や、プリント配線基板、半導体ウエハ等の基板の製造工程に好適に使用することができる。
【図面の簡単な説明】
第１図は、この発明にかかる好ましい基板処理装置の要部の概略構成を示した模式的断面図であり、第２図は、第１図の平面図であり、第３図は、第２図の要部詳細図である。また、第４図は、第１図に示した第１上エアナイフの断面図であり、第５図は、第４図の矢示Ｖ方向の平面図であり、第６図は、第４図の矢示ＶＩ方向の正面図である。TECHNICAL FIELD The present invention relates to a substrate processing apparatus for sequentially performing wet and dry processing on a substrate while transporting the substrate by a transport unit, and particularly to a substrate processing apparatus excellent in uniformity of substrate drying.
BACKGROUND ART Conventionally, in a process of manufacturing a glass substrate such as a liquid crystal display and a photomask, and a substrate such as a printed wiring board and a semiconductor wafer, various processing liquids are supplied to the substrate surface and the substrate surface is processed with the processing liquid. After that, a process of removing this from the substrate surface is performed.
For example, in the step of cleaning the substrate, using a cleaning apparatus, after pouring a processing liquid such as pure water on the surface of the substrate to wash it, in a drying apparatus, blowing a gas for drying onto the substrate surface, The processing liquid attached to the substrate surface is removed.
Such a cleaning device and a drying device are integrally connected via a transfer means to constitute a substrate processing device. Usually, a substrate is carried in and out between the cleaning device and the drying device. Are separated by a wall with an opening.
However, in the cleaning device, since a mist-like cleaning solution is sprayed onto the substrate from a spray nozzle, the mist of the sprayed cleaning solution easily enters the drying device through the opening, and therefore, In addition, the mist that has entered the drying device easily adheres to the substrate and causes spot-like stains on the substrate surface.
Therefore, conventionally, these are installed at a fixed interval between the cleaning device and the drying device to prevent mist from entering the drying device.
However, the above-described conventional substrate processing apparatus configured as described above still has a problem as described below.
That is, the surface of the substrate after being cleaned by the cleaning device is removed from the surface by the natural flow of the cleaning liquid supplied on the surface, and the liquid pool of the cleaning liquid is scattered in islands. When the substrate is dried using the drying gas in a state where the liquid pools are scattered in the form of islands, when the island-shaped liquid pools are removed and dried, a stain is generated in the same portion. It is.
Particularly, in recent years, the size of the substrate has been increased, and such a large-sized substrate is liable to cause the above-mentioned island-shaped liquid pool, which is a problem.
The present invention has been made in view of the above problems, and it is possible to remove a processing liquid from a substrate surface and dry the processing liquid so as not to cause stain on the substrate surface, and furthermore, it is possible to reduce the size of the apparatus. It is an object to provide a simple substrate processing apparatus.
DISCLOSURE OF THE INVENTION The present invention includes a transfer unit that transfers a substrate substantially horizontally, a wet processing unit that performs wet processing on the substrate transferred by the transfer unit, and a downstream unit that is disposed downstream of the wet processing unit in the transfer direction. A film liquid supply means for supplying a film liquid in which a processing liquid is formed in a film shape (curtain shape) onto the substrate; and a slit-shaped opening, wherein the opening faces the entire width of the substrate. A gas ejecting means disposed downstream of the film liquid supply means in the transport direction and ejecting gas from the opening to generate a plate-like air flow. Related to the device.
According to the substrate processing apparatus of the present invention, first, the processing liquid formed in a film shape by the film liquid supply unit is supplied onto the substrate discharged from the wet processing unit. As a result, the processing liquid having a uniform film thickness in the transport direction and the direction perpendicular thereto is applied to the substrate without unevenness, that is, without generating an island-like liquid pool.
When the processing liquid applied on the substrate in this way reaches immediately below the gas ejecting means provided on the downstream side in the transport direction of the film liquid supply means, the processing liquid is ejected from the gas ejecting means. The substrate is removed from the substrate by an air current, that is, drainage is performed, and the substrate is dried.
As described above, according to the substrate processing apparatus, the liquid is drained in a state where the processing liquid having a uniform film thickness is applied on the substrate, that is, in a state where no island-like liquid pool is generated on the substrate. Therefore, it is possible to fundamentally prevent the occurrence of a stain at the time of draining, which has conventionally been a problem.
Further, since the film liquid supply means is provided on the upstream side in the transport direction from the gas ejection means, the mist generated in the wet processing section can be completely shut off by the film liquid. Therefore, it is possible to effectively prevent mist from adhering to the substrate surface after draining and drying, and it is possible to eliminate the occurrence of stains caused by such mist. Therefore, it is not necessary to increase the distance between the wet processing unit and the gas ejection unit, and the apparatus can be downsized.
In addition, it is preferable that the gas ejecting means is disposed such that the longitudinal direction of the opening is inclined with respect to a direction orthogonal to the transport direction. According to this configuration, the processing liquid can be pushed toward the side of the substrate by the airflow ejected from the gas ejection means, and can be smoothly removed from the substrate.
Further, the gas ejection means may be similarly provided below the substrate.
Preferably, the distance between the opening of the gas jetting means and the substrate is 1 mm or more and 5 mm or less. If the distance between the opening and the substrate is less than 1 mm, the opening may be in contact with the treatment liquid applied on the substrate, while if it exceeds 5 mm, the drying effect is reduced.
Further, a plurality of the gas ejection means may be arranged in parallel along the transport direction. By doing so, the drying effect of the substrate can be further enhanced.
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings in order to explain the present invention in more detail.
As shown in FIG. 1, the substrate processing apparatus according to the present invention performs a wet process on the substrate W transported by the transport unit 1 for horizontally transporting the substrate W in the arrow 10 direction. A wet processing unit WET to be performed, a dry processing unit DRY for performing a dry processing, a film liquid supply unit 4, a first upper air knife 6, and a first lower processing unit disposed between the wet processing unit WET and the dry processing unit DRY. An air knife 7, a second upper air knife 8 and a second lower air knife 9 are provided.
The wet processing section WET, the membrane liquid supply means 4, the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, the second lower air knife 9, and the dry processing section DRY have two side walls 15, 15, It is housed in a cover body composed of a bottom plate 17 and an upper plate 17. The film liquid supply means 4 is disposed upstream of the air knife (in this example, the first upper air knife 6 and the first lower air knife 7) in the transport direction.
The transport unit 1 includes a large-diameter transport roller R and an auxiliary roller r. As shown in FIG. 2, a plurality of transport rollers R are provided at appropriate intervals on a shaft 11 laid between the side walls 15, 15, and both ends of the shaft 11 are supported by bearings. It is rotatably supported. One end of the shaft 11 protrudes outside from one of the side walls 15 and is connected to a roller driving device 12 provided outside the side wall 15. Thus, the transport roller R is driven by the roller driving device 12 to transport the substrate W in the direction indicated by the arrow 10.
A plurality of auxiliary rollers r are provided at short intervals in the vicinity of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 along the transport direction of the substrate W. The support members 22, 24, and 26 provided on the support plates 21, 23, and 25 respectively rotatably support the support members 22, 24, and 26. By arranging a large number of auxiliary rollers r in this manner, distortion and bending of the substrate W are prevented, the flatness of the substrate W is made high accuracy, and the substrate W is supplied onto the substrate W by the film liquid supply means 4. It is possible to prevent the layer of the processed processing liquid from becoming non-uniform. The support plates 21, 23, 25 are fixed to the side walls 15, 15, as appropriate.
The wet processing unit WET is provided with processing liquid supply means (not shown) for supplying a processing liquid to the upper surface and / or lower surface of the substrate W. The processing liquid supply means (not shown) includes a pipe (not shown) provided above and / or below the substrate W, and a plurality of shower nozzles (not shown) connected to the pipe (not shown). (Not shown), and is connected to a processing liquid supply source (not shown) for supplying a processing liquid. The shower nozzle (not shown) is arranged such that each spray area covers the entire area in the width direction of the substrate W as a whole. Although not shown, a liquid collecting part is formed on the bottom plate 16, and a drain pipe is connected to the liquid collecting part, and the processing liquid collected in the liquid collecting part is discharged to the outside through the drain pipe. It has become so.
As shown in FIG. 2, the film liquid supply means 4 is configured to make the processing liquid supplied from the liquid supply source 40 into a film (curtain) and flow down over the entire width of the substrate W.
At a position below the substrate W and facing the film liquid supply unit 4 with the substrate W interposed therebetween, a processing liquid ejecting unit 5 for ejecting a processing liquid toward the lower surface of the substrate W is provided. ing. The processing liquid supplied from the film liquid supply means 4 and the liquid ejecting means 5 is usually pure water, but not limited thereto, and various processing liquids can be applied.
The first upper air knife 6 and the first lower air knife 7 are vertically arranged side by side so as to oppose each other across the substrate W. Similarly, the second upper air knife 8 and the second lower air knife 9 The dry gas is blown out from each of the outlets 61 to generate a plate-like air flow, and the processing liquid attached to the upper and lower surfaces of the substrate W is removed.
The first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 have respective longitudinal directions L perpendicular to the transport direction of the substrate W, that is, the width direction of the substrate W. The air outlets 61 are arranged so as to be inclined with respect to H, and each outlet 61 is configured to face the entire width of the substrate W.
Hereinafter, specific configurations of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 will be described with reference to FIGS. The first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 have the same configuration. Therefore, the configuration of the first upper air knife 6 will be described below as a representative.
As shown in FIG. 4, the first upper air knife 6 fastens a front plate 63 to a long main body 64 with screws 65, and a wide slit formed between the front plate 63 and the main body 64. The width M of 66 can be adjusted. The opening of the slit 66 serves as the outlet 61.
Further, a gas chamber 67 and a gas supply path 68 are formed in the main body 64, and the gas supply path 68 is connected to the gas supply source 60. Although not shown, a flow rate adjusting mechanism, an air filter, and the like are interposed between the gas supply path 68 and the gas supply source 60.
As shown in FIGS. 5 and 6, the slit 66, the gas chamber 67, and the gas supply path 68 have a configuration in which blocks B each of which is a set of these are connected in series in the longitudinal direction L. The gas is supplied from the gas supply source 60 to each gas supply path 68. Each slit 66 and the gas chamber 67 are formed along the longitudinal direction L, and each slit 66 communicates with an adjacent slit 66. Further, the gas supply passage 68 is formed substantially linearly from above in the approximate center of the block B toward the gas chamber 67. In this manner, by connecting the blocks B, it is possible to easily cope with a wide and long substrate W.
As shown in FIG. 1, the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9, each having the above-described configuration, It is fixed in a state inclined at an angle θ1 to the downstream side in the transport direction. In this manner, by tilting, the processing liquid attached to the substrate W is blown off toward the upstream side in the transport direction.
In FIG. 1, the first upper air knife 6 and the second upper air knife 8 are not shown for convenience of explanation, but the scale plate 62 for angle adjustment is omitted. The air knife 8 is also provided with a scale plate 62 for adjusting the angle, similarly to the first lower air knife 7 and the second lower air knife 9, and includes a first upper air knife 6, a first lower air knife 7, a second upper air knife 8, and a second lower air knife 8. Each of the air knives 9 can adjust the angle of the inclination angle θ1 by using the scale plate 62 for adjusting the angle.
Although not shown, both ends of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 are respectively attached to the columns so as to be movable in the vertical direction. You can adjust the distance between.
Note that the distance between the outlet 61 of the first upper air knife 6 and the second air knife 8 and the substrate W is preferably in the range of 1 mm or more and 5 mm or less. If the distance between the outlet 61 and the substrate W is less than 1 mm, the outlet 61 may come into contact with the processing liquid applied on the substrate W, and if it exceeds 5 mm, the drying effect is reduced. In addition, it is preferable that the inclination angle θ1 is not less than 15 degrees and not more than 60 degrees from the viewpoint that a stable boundary surface having no unevenness and no splash of liquid can be formed.
Although not particularly shown, an exhaust mechanism is appropriately connected to the chamber surrounded by the side walls 15, 15, the bottom plate 17 and the upper plate 17, and the exhaust mechanism exhausts the gas in the chamber. Has become.
According to the substrate processing apparatus of the present example having the above configuration, the processing liquid formed in a film form from the film liquid supply unit 4 on the substrate W transported by the transport unit 1 and discharged from the wet processing unit WET. Is supplied. Thereby, the processing liquid having a uniform film thickness in the transport direction and the direction perpendicular thereto is applied to the substrate W without unevenness, that is, without generating an island-like liquid pool.
On the other hand, the processing liquid is sprayed onto the lower surface of the substrate W from the processing liquid ejecting means 5, and the lower surface is cleaned.
Then, when the substrate W is further transported, it reaches between the first upper air knife 6 and the first lower air knife 7, and the plate-like air current ejected from the first upper air knife 6 causes the plate W in FIG. As shown, the processing liquid on the substrate W is pushed in the direction of arrow 13 to be removed, and the upper surface of the substrate W is dried.
On the other hand, water droplets adhering to the lower surface of the substrate W are dried by a plate-like air current ejected from the first lower air knife 7, and the substrate W is dried.
When the substrate W is further conveyed in the direction indicated by the arrow 10, the upper and lower surfaces thereof are dried by the second upper air knife 8 and the second lower air knife 9, respectively, and the dried substrate W is carried into the dry processing unit DRY. You.
As described above, according to the substrate processing apparatus, the liquid is drained in a state where the processing liquid having a uniform film thickness is applied on the substrate W, that is, in a state where no island-like liquid pool is generated on the substrate. Therefore, it is possible to fundamentally prevent the occurrence of a stain at the time of draining, which has conventionally been a problem.
Further, since the film liquid supply means 4 is provided on the upstream side in the transport direction from the first upper air knife 6, mist generated in the wet processing section can be completely shut off by the film liquid. Therefore, it is possible to effectively prevent mist from adhering to the surface of the substrate W after draining and drying, and it is possible to eliminate the occurrence of stains caused by such mist. Therefore, it is not necessary to increase the distance between the wet processing unit WET and the first upper air knife 6, and the apparatus can be downsized.
Further, since the first upper air knife 6 is disposed in an inclined state, the processing liquid can be pushed toward the side of the substrate W, and can be smoothly removed from the substrate W.
INDUSTRIAL APPLICABILITY As described above, the substrate processing apparatus according to the present invention can be suitably used in a process of manufacturing a glass substrate such as a liquid crystal display and a photomask, a printed wiring board, and a substrate such as a semiconductor wafer. Can be.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a main part of a preferred substrate processing apparatus according to the present invention, FIG. 2 is a plan view of FIG. 1, and FIG. FIG. 4 is a cross-sectional view of the first upper air knife shown in FIG. 1, FIG. 5 is a plan view in the direction of arrow V in FIG. 4, and FIG. FIG. 6 is a front view in the direction of arrow VI of FIG.

Claims (4)

基板を略水平に搬送する搬送手段と、
前記搬送手段によって搬送される基板に対し湿式の処理を施す湿式処理部と、
前記湿式処理部より搬送方向下流側に配設され、処理液を膜状に形成して前記基板上に供給する膜液供給手段と、
スリット状の開口部を具備し、該開口部が前記基板の全幅にわたって対峙するように、前記膜液供給手段の前記搬送方向下流側に配設され、前記開口部から気体を噴出させて板状の気流を生じさせる気体噴出手段とを設けて構成したことを特徴とする基板処理装置。Transport means for transporting the substrate substantially horizontally,
A wet processing unit that performs wet processing on the substrate transferred by the transfer unit,
Membrane liquid supply means disposed on the downstream side in the transport direction from the wet processing unit, forming a processing liquid in a film form and supplying the processing liquid onto the substrate,
It has a slit-shaped opening, and is disposed on the downstream side in the transport direction of the film liquid supply means so that the opening faces the entire width of the substrate. And a gas ejecting means for generating an air flow. 前記気体噴出手段を、その前記開口部長手方向が前記搬送方向と直交する方向に対して傾斜するように配設したことを特徴とする請求の範囲第１項記載の基板処理装置。2. A substrate processing apparatus according to claim 1, wherein said gas ejection means is disposed such that a longitudinal direction of said opening is inclined with respect to a direction orthogonal to said transport direction. 前記気体噴出手段の開口部と前記基板との間の距離を、１ｍｍ以上５ｍｍ以下としたことを特徴とする請求の範囲第１項または第２項記載の基板処理装置。3. The substrate processing apparatus according to claim 1, wherein a distance between the opening of the gas ejection unit and the substrate is 1 mm or more and 5 mm or less. 複数の前記気体噴出手段を前記搬送方向に沿って並設したことを特徴とする請求の範囲第１項乃至第３項記載のいずれかの基板処理装置。The substrate processing apparatus according to any one of claims 1 to 3, wherein a plurality of the gas ejection means are arranged in parallel along the transport direction.
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