JPS63120694A - Manufacture of semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device in an IC card, which is required to be thin (0.76+n according to the 130 standard).

[Summary of the invention]

In IC card manufacturing, a semiconductor element is adhesively fixed onto an insulating substrate on which a circuit pattern exists, and the insulating substrate is formed by connecting electric bridges corresponding to the semiconductor element and the circuit pattern with thin metal wires, so that the outer shape of the insulating substrate is the same as that of the insulating substrate. By inserting and holding the heat-resistant resin body, which is a card that has a shape, into the hole and sealing the semiconductor element using thermosetting resin transfer molding, the heat-resistant resin body and the sealed semiconductor device are integrated. It is designed to have a structure.

[Conventional technology]

Conventionally, as shown in FIG. 3, a semiconductor element 3 on an insulating substrate l having circuit patterns 2 and 2'' to which a resin frame 12 is adhered is connected to a circuit backing 2 with a thin metal wire 4, and a botting resin 13 After sealing and heat curing, the resin frame 12 and the botting resin 13 are surface ground at the same time to have the same thickness as the heat resistant resin body 8, and the obtained semiconductor device 15 is made of heat resistant resin as a card. A part of the gap 14 between the heat-resistant resin body hole 8° and the semiconductor device 15 is filled with a buffering agent such as epoxy adhesive or silicone resin and bonded, and an oversheet film is inserted into the body hole 8'' and embedded. It is generally known to manufacture an IC card by coating and adhering a heat-resistant resin material 8 on both sides of the heat-resistant resin body 8.

[Problem that the invention seeks to solve]

However, after sealing with conventional botting, the resin frame and sealant are simultaneously ground to create an ultra-thin semiconductor device, which is then inserted into a hole in the heat-resistant resin body of the card and embedded. There are the following problems with IC cards.
There was a drawback that the yield of C cards was significantly lowered.

(b) When the surface of the encapsulation part of a semiconductor device, which consists of a potting resin and a resin frame with different hardnesses and compositions, is ground to make it thinner, the potting resin and the resin frame (generally,
Heat-resistant glass epoxy base materials are often used. ) or on the bonding surface, which may impair the product appearance of the IC card after oversheeting.

(b) At the time of sealing, some of the air bubbles contained in the botting resin itself and air bubbles caught in the side surface of the hole in the resin frame remain, and after grinding the sealing part, the air bubbles form a dent. ), it also damages the product appearance of the IC card after oversheeting.

(c) When grinding a semiconductor device manufactured with a combination of variations in the thickness of the insulating substrate on which the semiconductor element is attached and the semiconductor element, and variations in the looping height of the thin metal wire that has been bobbed, the overall height of the looping height of the thin metal wire increases. The botting resin covering the top part becomes thin and brittle, resulting in appearance defects due to exposure of thin metal wires and deterioration of airtightness in reliability.

(d) A gap is created at the boundary between the semiconductor device inserted and embedded in the heat-resistant resin body hole and the heat-resistant resin body hole, and it remains in the gap after oversheeting to maintain the bending stress resistance of the IC card. To prevent defects in product appearance due to air bubbles, this gap is filled with thermosetting resin or silicone resin. However, if the filling amount of these resins is large, the resin will form a convex shape along the boundary in the thickness direction of the heat-resistant resin body, making it impossible to photograph the appearance of the product after oversheeting.

In addition, if the amount of resin filled is small, the bending stress resistance will decrease due to insufficient adhesive strength, and air bubbles remaining in a part of the boundary will impair the appearance of the product after oversheeting.

(e) To achieve ultra-thinness, the total thickness of the semiconductor device is 0.
．． Although the resin frame and the resin frame are ground to a thickness of 5 to 0.6 mm, some of the low-hardness wA edge plate material gets stuck on the grinding wheel surface, resulting in poor workability and the smoothness of the semiconductor device sealing part. unobtainable and spoil the appearance of the product after oversheeting.

(f) The semiconductor element is mounted on an insulating substrate with a resin frame and sealed by botting. However, the thermal expansion coefficients of the botting resin and the insulating substrate are different, and due to the arrangement of the semiconductor element with respect to the insulating substrate, etc., warping that makes the surface of the insulating substrate convex is likely to occur in the semiconductor device after sealing. As a result, quality defects occur in electrical characteristics after grinding, which lowers the yield of semiconductor devices and at the same time lowers the yield of IC card manufacturing.

Therefore, in order to solve the conventional drawbacks, this invention
The insulating substrate on which the semiconductor element is mounted, bonded by thin metal wires by wire bonding, and the heat-resistant resin body that is the card are integrated, and then sealed using transfer molding, so that the sealed part is heat-resistant. The object is to manufacture an IC card that is parallel and smooth including the boundary with the resin body and has the same thickness as the heat-resistant resin body.

[Means for Solving the Problems] In order to solve the above problems, the present invention provides a semiconductor bonded by thin metal wires on an insulating plate inserted and held in a hole in a heat-resistant resin body of a card. The device was sealed by transfer molding, and the heat-resistant resin body and the semiconductor device were integrally molded to improve yield and quality.

[Effect]

When an IC card is manufactured using the above structure,
A semiconductor device with the same thickness as the heat-resistant resin body that is the card can be obtained, and the polishing process that was required for semiconductor devices with a conventional botting-sealed structure is not necessary, and the boundary between the heat-resistant resin body and the semiconductor device can be removed. The dents that had occurred on the sealing surface are eliminated, the surface of the semiconductor device becomes smooth, the heat-resistant resin body hole and the thermosetting resin for sealing the semiconductor device are in close contact, and the bending stress of the card is reduced. This makes it possible to manufacture IC cards that are difficult to remove.

〔Example〕

This embodiment will be explained below based on the drawings.

FIG. 1 shows a heat-resistant resin body 8 and a semiconductor device 15 according to the present invention.
FIG. 2 is a sectional view of an IC card having an integrated structure. Second
In the figures, the manufacturing process of the integrated structure IC card is sequentially shown. First, FIG.
After a semiconductor element 3 such as a CPU, a memory IC, an electrostatic voltage diode array, etc., or an IC chip with these functions integrated into one chip is fixed to the insulating substrate 1 with an epoxy adhesive on the insulating substrate 1 containing the 2'. , is a mounting sectional view of the semiconductor device before sealing, in which electrodes on the semiconductor element 3 and the circuit pattern 2 are connected by thin metal wires 4. The circuit pattern 2' on the bottom surface of the insulating substrate 1, which becomes the electrode in the IC card, and the circuit pattern 2 are connected to the insulating substrate 1 through the through hole 5.
However, on the circuit pattern 2 side, a solder resist 6 covers the through hole 5 to prevent thermosetting resin 7 from leaking from the through hole 5 to the circuit pattern 2'' side during transfer molding. Figure 2 (bl) shows that the insulating substrate 1 mounted at the upper end of the hole 8' of the heat-resistant resin body 8, which is a card, is connected to the semiconductor element 3.
The heat-resistant resin body 8 inserted and held with the side facing downward is placed in the transfer molding mold! ! FIG. 2 is a cross-sectional view of the mold placed in the mold and held under pressure by a lower mold block 9 and an upper block 10. The semiconductor element 3 is guided by the runner 1), and the gelled thermosetting resin 7 is injected into the semiconductor device 15 through the gate 1)', and the heat-resistant resin body 8 and the semiconductor device 15 are integrated as shown in FIG. An IC card with this structure is manufactured. FIG. 2 (C1 shows a plan view of the state taken out from the transfer molding die after molding. That is, the semiconductor device 15 is supported by the runner 1), but by breaking off the vicinity of the gate 1), The IC card is obtained by separating it from the runner 1). At this time, some resin unevenness remains on the gate 1), but this can be easily smoothed by grinding with a cutting tool or the like.

FIG. 3 shows a cross-sectional structure of a conventional IC card semiconductor device. It can be seen that in this structure, a gap 14 remains between the heat-resistant resin body hole 8' and the resin frame of the semiconductor device 15, so that filling and bonding with resin is required.

Figure 4 +a+, (bl, (C1) is a heat-resistant resin body hole designed to prevent the semiconductor device 15 from being pulled out of the heat-resistant resin body 8 due to bending stress that is likely to occur when an IC card is used. This is an example of an integrated IC card in which a step 16 or a chamfer 17 is provided on the side surface of the portion 8' or a step 16 is provided to receive the periphery of the insulating substrate 1.

In the embodiments described above, the IC card has an integrated structure in which the heat-resistant resin body 8 and the semiconductor device 15 are formed by transfer molding, and it is possible to prevent the semiconductor device 15 and the heat-resistant resin body 8 from being pulled out due to bending stress. and have the same thickness, and an IC card with a smooth sealing part can be obtained.

〔Effect of the invention〕

As explained above, the present invention incorporates the sealing of a semiconductor element into a heat-resistant resin body and performs the transfer molding process, thereby achieving the ultra-thin design required for semiconductor devices of IC cards without the need for a grinding process. This streamlines the manufacturing process and improves the appearance of the product after oversheeting, as the surface of the sealing part becomes smooth and there are no irregularities at the interface between the heat-resistant resin body and the semiconductor device. Since the integrated structure sealing improves the airtightness of the semiconductor element and the durability against bending stress, it has the effect of improving the manufacturing yield and quality of the IC card.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of the integral structure of an IC card according to the present invention, FIG. 2 fal is a cross-sectional view of a semiconductor device before it is assembled into an IC card and sealed, and FIG. FIG. 2 is a cross-sectional view of the semiconductor device housed in the transfer mold after being incorporated into the IC card (Cl is the I taken out from the transfer mold after sealing molding).
A plan view of the C card, FIG. 3 is a sectional view of a conventional semiconductor device incorporated into an IC card, and FIG. 4 is a sectional view of the IC card.
(bl, (C) are cross-sectional views showing an embodiment of a semiconductor device having an integrated structure in consideration of the bending resistance of an IC card according to the present invention. l...Insulating substrate 2...Circuit pattern 2° ... External electrode circuit pattern 3 ... Semiconductor element 4 ... Metal thin wire 5 ... Through hole 6 ... Solder resist 7 ... Thermosetting resin 8 ... Heat-resistant resin body (card) 8 '...Heat-resistant resin body hole part 9...Transfer molding mold lower mold block 10...
・Transfer molding mold upper mold block 1)...Runner 1) 1...Gate 12...Resin frame 13...Boating resin 14...Gap 15...Semiconductor device 16...Heat resistance Resin body hole side surface step 17...Heat-resistant resin body hole side chamfer or more

Claims (3)

[Claims] (1) an insulating substrate having a circuit pattern on at least both sides on which at least one semiconductor element is mounted;
A mounting structure for a semiconductor device for an IC card comprising a heat-resistant resin body having a hole into which the insulating substrate can be inserted,
After disposing the insulating substrate in the upper part of the hole of the heat-resistant resin body, the heat-resistant resin body is mounted on a transfer molding die, the insulating substrate is covered with a thermosetting resin, and the semiconductor device and the A method for manufacturing a semiconductor device, characterized in that it has an integral structure with a heat-resistant resin body. (2) The method of manufacturing a semiconductor device according to claim 1, wherein the heat-resistant resin body hole is a hole that can hold the insulating substrate. (3) The method for manufacturing a semiconductor device according to claim 1, wherein steps, surfaces, and irregularities are provided on the side surface of the heat-resistant resin body hole.