JPS6290982A - Manufacture of conductive film - Google Patents
Manufacture of conductive filmInfo
- Publication number
- JPS6290982A JPS6290982A JP60229944A JP22994485A JPS6290982A JP S6290982 A JPS6290982 A JP S6290982A JP 60229944 A JP60229944 A JP 60229944A JP 22994485 A JP22994485 A JP 22994485A JP S6290982 A JPS6290982 A JP S6290982A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive film
- transparent conductive
- electrolessly
- electroless plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000003197 catalytic effect Effects 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 18
- 238000007772 electroless plating Methods 0.000 claims description 16
- 238000007747 plating Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000003213 activating effect Effects 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 229910052790 beryllium Inorganic materials 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 229910052720 vanadium Inorganic materials 0.000 abstract description 2
- 229910052770 Uranium Inorganic materials 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052762 osmium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 hypophosphite anions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、gL発光素子や液晶表示素子などの透明は極
として用いられる透明導′屯膜に関し、特にIn20x
(x=3) hるいは5nOy(y≦2)などの金属
酸化物を一成分とした透明4電膜上にソルダプルな無電
解メッキ膜を形成する導電膜の製造方法に関するもので
ある。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a transparent conductive film used as a transparent electrode in gL light emitting devices, liquid crystal display devices, etc.
The present invention relates to a method for manufacturing a conductive film in which a solder-pull electroless plating film is formed on a transparent 4-electrode film containing a metal oxide such as (x=3) or 5nOy (y≦2) as one component.
近年、In20113るいはSnO□ などの金属酸化
物を一成分とした透明導電膜がgL発光素子、液晶表示
素子、太陽電池などの透明電極として広く用いられてお
り、生産量も年々増加の一途を辿っている。しかし、こ
の透明導電膜は本質的な欠点を有しており、それは、外
部装置に接続する端子部が一般に用いられているハンダ
付けが直接にはできないという点である。In recent years, transparent conductive films containing metal oxides such as In20113 or SnO□ have been widely used as transparent electrodes in GL light emitting devices, liquid crystal display devices, solar cells, etc., and the production volume continues to increase year by year. I'm following it. However, this transparent conductive film has an essential drawback in that the terminal portion for connecting to an external device cannot be directly soldered, which is commonly used.
このように透明導電膜には直接ハンダ付けができないの
で、従来より電極の堆り出しに際しては幾つかの方法が
とられているが、そのうち無電解メッキを利用して透明
溝11膜上にハンダ付は可hヒなCu、Niなどの金4
膜を形成する方法を第2図を診照して説明する。Since it is not possible to directly solder the transparent conductive film, several methods have been used to deposit the electrodes, one of which is to use electroless plating to solder the electrodes onto the transparent groove 11 film. It is possible to attach metals such as Cu and Ni.
The method of forming the film will be explained with reference to FIG.
この従来の方法は、その概略工程を第2図に示すように
、ガラス基板などの基体1上にIn2O3ロるいはSn
O2などの金属酸化物を一成分とした透明導電膜11を
所望のパターンに形成したうえ(同図(a))、その表
面のエツチング処理を行う(同図(b))。次に前記透
明導電膜11上のメッキ膜を析出嘔ぜるべき部分にPd
などの触媒性金属12を付着させる(同図(C))。次
いで、この金属12を活性化(アクセレーテイングとも
いう)しだ後(同図(d))、所定の条件でCu″!た
はNiなどの無電解メッキを行いメッキ膜13を形成す
ることにより、ソルダプル仕上げとしていた。In this conventional method, as shown in the schematic steps in FIG. 2, In2O3 or Sn
A transparent conductive film 11 containing a metal oxide such as O2 as one component is formed into a desired pattern (FIG. 2(a)), and its surface is etched (FIG. 2(b)). Next, the plated film on the transparent conductive film 11 is deposited on the part where Pd is to be deposited.
A catalytic metal 12 such as the like is attached ((C) of the same figure). Next, after activating (also called accelerating) this metal 12 (FIG. 1(d)), electroless plating with Cu''! or Ni is performed under predetermined conditions to form a plating film 13. It had a solder pull finish.
しかし、このような従来の方法によるものは、下記に示
す重大な欠点を有していた。However, such conventional methods had the following serious drawbacks.
(1)透明導電膜上に直接無電解メッキはできないので
、透明導電膜上に触媒物質(例えばPd塩など)を形成
する工程、あるいはメッキ膜の接着力を上げるための表
面エツチング工程等が必要であり、工数がかかる。(1) Electroless plating cannot be performed directly on the transparent conductive film, so a process of forming a catalyst substance (such as Pd salt) on the transparent conductive film or a surface etching process to increase the adhesion of the plating film is required. , and it takes a lot of man-hours.
(2)透明導電膜に触媒能を賦与でせる工程はPdなど
の金属塩の入った溶液中に透明導電膜を浸漬し、透明導
電膜の表面にPd塩を付着式せるだけでhり無電解メッ
キを行ってもメッキ膜の透明導電膜に対する付着力がそ
れ程強くなく剥離する欠点がめった。(2) The process of imparting catalytic ability to a transparent conductive film is as simple as immersing the transparent conductive film in a solution containing a metal salt such as Pd and depositing Pd salt on the surface of the transparent conductive film. Even when electrolytic plating is performed, the adhesion of the plating film to the transparent conductive film is not very strong and it rarely peels off.
(3)触媒能を賦与きせる溶液は、液の濃度や温度、攪
拌程度等の管理が煩雑であり、また液寿命も短くて高価
でbつだ。でらに廃液の処理も公害上問題であった。(3) The solution that imparts catalytic ability is complicated to control the concentration, temperature, degree of stirring, etc., and also has a short lifespan and is expensive. In addition, the treatment of waste liquid was also a pollution problem.
本発明は、以上の欠点に鑑みなてれたもので、透明導電
膜上に無電解メッキ膜を形成するに際しその工数を低減
化し、しかもメッキ膜の付着力を増大δせることかでき
る導電膜の製造方法を提供するものである。The present invention has been developed in view of the above drawbacks, and is a conductive film that can reduce the number of steps when forming an electroless plating film on a transparent conductive film and increase the adhesion of the plating film. The present invention provides a method for manufacturing.
本発明に係る導電膜の製造方法は、金属酸化物からなる
透明導電膜にPdなどの触媒能をもった少くとも一種類
の金属成分を含有させることにより、この透明導電膜上
の全部または一部分に無電解メッキを施すことを特徴と
するものでるる。In the method for producing a conductive film according to the present invention, the transparent conductive film made of a metal oxide contains at least one kind of metal component having catalytic ability such as Pd. It is characterized by applying electroless plating to.
本発明においては、透明4を膜中にあらかじめ触媒能を
もつPdなどの金属を含有させておくことによって、こ
の透明導電膜上−直接、無電解メッキを行うことができ
る。In the present invention, electroless plating can be performed directly on the transparent conductive film by pre-containing a metal such as Pd having catalytic ability in the film of Transparent 4.
以下、本発明を第1図を参照して詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to FIG.
第1図(a′)乃至(e)は本発明に係る導電膜の製造
方法の一実施例を示す基本的な工程断面図でるる。FIGS. 1(a') to 1(e) are basic process sectional views showing one embodiment of the method for manufacturing a conductive film according to the present invention.
まず、ガラス基板などの基体1上にIn20Bあるいは
5n02などの金属酸化物を一部分とした透明導電膜を
真空蒸着、電子ビーム蒸着、スパッタリング、 CVD
法等に!、9形成す、6に際し、Fe 、 Co 、N
i 。First, a transparent conductive film partially made of a metal oxide such as In20B or 5n02 is deposited on a substrate 1 such as a glass substrate by vacuum evaporation, electron beam evaporation, sputtering, or CVD.
To the law! , 9 When forming 6, Fe , Co , N
i.
Ru 、Rn、Pd 、Oa 、 Ir +Ptなどの
第8族金属およびCu。Group 8 metals such as Ru, Rn, Pd, Oa, Ir + Pt and Cu.
Ag 、Au 、 Be 、Ge 、AL、C,V、M
O、Cr 、Se 、’rt 、Uの肉食くとも一種類
を含むように透明導電膜を形成する。そして、この透明
導電膜をフォトエンチングでパターニングすると、触媒
能が賦与でれた所定パターンの透明導電膜2が形成され
る(同図(a))。次に。Ag, Au, Be, Ge, AL, C, V, M
A transparent conductive film is formed so as to contain at least one type of O, Cr, Se, 'rt, and U. When this transparent conductive film is patterned by photo-etching, a transparent conductive film 2 having a predetermined pattern imparted with catalytic ability is formed (FIG. 2(a)). next.
この透明導電膜2の表面に出ている触媒核を例えば硫酸
等の活性化剤によって活性化(アクセレーテイング)シ
(同図(b))、次工程の無電解メッキ膜との密着性を
よシ一層向上させる。次いで、CuまたはNi などの
無電解メッキを行うことにより、前記透明溝を模2上の
全部または一部分に第1図(C)に示すような無電解メ
ッキ膜3を被着形成することができる。The catalyst nuclei exposed on the surface of the transparent conductive film 2 are activated (accelerated) with an activating agent such as sulfuric acid (see figure (b)) to improve adhesion to the electroless plating film in the next step. further improve performance. Next, by performing electroless plating with Cu or Ni, an electroless plating film 3 as shown in FIG. 1(C) can be formed on all or part of the pattern 2 to form the transparent grooves. .
つぎに、本発明の実施態様を具体的に説明する。Next, embodiments of the present invention will be specifically described.
まず、ガラス基板上に触媒能を有した透明41を膜を形
成するが、ここでは成膜法にスパッタリング法を用いた
。すなわち、スパッタに用いるターゲットは工n20x
(x≦3)と5nOy(y≦2)があらかじめ混合され
プレス成形されたもの(以下工■ターゲットと称する)
で、このターゲット上にPd金属の板状ターゲン) (
ITOターゲットとの面積比はPd/ ITO= 0.
005 )を乗せ、Ar ガスを導入してスパッタリン
グを行うと、ターゲットからはITO成分とPd成分が
混在した状態でガラス基板上に堆積し被膜を形成する。First, a transparent film 41 having a catalytic ability is formed on a glass substrate, and here a sputtering method is used as a film forming method. In other words, the target used for sputtering is
(x≦3) and 5nOy (y≦2) are mixed in advance and press-molded (hereinafter referred to as the target)
Then, on this target, a Pd metal plate-like targen) (
The area ratio with the ITO target is Pd/ITO=0.
005), and sputtering is performed by introducing Ar gas, a mixture of ITO components and Pd components are deposited from the target on the glass substrate to form a film.
このとき、透明導電膜は膜厚1500A 、透過率85
%、固有抵抗20〜50幅程度の膜を得た。At this time, the transparent conductive film has a thickness of 1500A and a transmittance of 85.
%, and a film having a width of about 20 to 50% specific resistance was obtained.
次いで、この透明導電膜を通常のフォトリソグラフィ一
工程にて所定のパターンにフォトエンチングし、Ni
メンキ膜を被着でせるべき部分以外の部分をレジストに
て被覆してアクセレーション工程にて活性化した後、N
iの無電解メッキ液に浸漬してNiメッキを行った。N
i無電解メッキの条件は液温65℃、メッキ時間20分
で、3μm厚のNi膜を得た。Next, this transparent conductive film is photo-etched into a predetermined pattern in one step of normal photolithography, and Ni
After covering the areas other than the areas where the Menki film should be applied with resist and activating it in the acceleration process, N
Ni plating was performed by immersing it in the electroless plating solution of i. N
i Electroless plating was performed at a liquid temperature of 65° C. and a plating time of 20 minutes to obtain a 3 μm thick Ni film.
このNi無電解メッキの工程では前記透明導電膜の表面
にあったPd原子が触媒となってNi メンキ液中の次
亜リン酸陰イオンを分解して脱水素現象を起し、その原
子状水素がNi メンキ液中のニンケル陽イオンを還元
して金属ニッケルとなシ透明導電膜上にNi膜を析出で
せるのでるる。In this Ni electroless plating process, the Pd atoms on the surface of the transparent conductive film act as a catalyst to decompose the hypophosphite anions in the Ni-Mencki solution, causing a dehydrogenation phenomenon, and the atomic hydrogen The nickel cations in the Ni solution are reduced to metallic nickel, and a Ni film is deposited on the transparent conductive film.
このようにして形成し九Nl膜の透明導電膜に対する付
着力を引っ張り試験機にて垂直力向に引っ張り試験した
ところ、約100 Kf/Crn以上の引っ張り強度を
示し良好であった。また、一般に用いるハンダにてハン
ダ付けを行ったところ、ハンダの濡れ性は非常に良好で
ろジ、全く問題はなかった。When the adhesion force of the thus formed 9Nl film to the transparent conductive film was tested in the vertical direction using a tensile tester, the tensile strength was about 100 Kf/Crn or more, which was good. Furthermore, when soldering was carried out using commonly used solder, the wettability of the solder was very good, and there were no problems at all.
以上説明したように本発明によれば、透明溝′区膜にら
らかじめ触媒能が賦与ちれているので、従来のように触
媒液に浸漬する工程は全く不要となり、これによって工
数が減り、また液の管理等も全く必要なく、廃液処理も
不要になる。さらに、透明導電膜中に含有させた触媒核
は従来の溶液浸漬とは異なり、透明導電膜表面に非常に
強固に固着し、いわゆる透明導電膜の一部を構成してい
るので、後工程の無電解メッキ膜の付着力が著しく向上
するなどの効果がるる。As explained above, according to the present invention, the transparent groove membrane is given catalytic ability in advance, so the conventional process of immersing it in a catalyst liquid is completely unnecessary, thereby reducing the number of man-hours. Moreover, there is no need for liquid management, and no waste liquid treatment is required. Furthermore, unlike conventional solution immersion, the catalyst nuclei contained in the transparent conductive film adhere very firmly to the surface of the transparent conductive film and constitute a part of the so-called transparent conductive film, so they can be used in subsequent processes. There are effects such as a marked improvement in the adhesion of the electroless plating film.
第1図(轟)乃至(c)は本発明に係る導電膜の製造方
法の一実施例を示す基本的な工程断面図、第2図(a)
乃至(、)は従来による透明導電膜の製造方法の一例を
示す工程断面図である。
1・・・・基体、2・・・・透明導電膜、3・・・・無
電解メッキ膜。
特許出願人 伊勢電子工業株式会社
代理人 山川政樹(fジ12名)
第1図
第2図Figures 1 (Todoroki) to (c) are basic process sectional views showing one embodiment of the method for manufacturing a conductive film according to the present invention, and Figure 2 (a)
1 to 2 are process cross-sectional views showing an example of a conventional method for manufacturing a transparent conductive film. 1...Base, 2...Transparent conductive film, 3...Electroless plating film. Patent Applicant: Ise Electronics Co., Ltd. Agent: Masaki Yamakawa (12 members of FJ) Figure 1 Figure 2
Claims (1)
膜にはPdなどの触媒能をもつた少くとも一種類の金属
成分を含有させてなり、該透明導電膜上に無電解メッキ
を施すことを特徴とする導電膜の製造方法。In a transparent conductive film made of a metal oxide, the transparent conductive film contains at least one kind of metal component having catalytic ability such as Pd, and electroless plating is performed on the transparent conductive film. Characteristic method for manufacturing a conductive film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60229944A JPS6290982A (en) | 1985-10-17 | 1985-10-17 | Manufacture of conductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60229944A JPS6290982A (en) | 1985-10-17 | 1985-10-17 | Manufacture of conductive film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6290982A true JPS6290982A (en) | 1987-04-25 |
Family
ID=16900164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60229944A Pending JPS6290982A (en) | 1985-10-17 | 1985-10-17 | Manufacture of conductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6290982A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270229A (en) * | 1989-03-07 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Thin film semiconductor device and process for producing thereof |
JP2001189473A (en) * | 1999-12-28 | 2001-07-10 | Sanyo Electric Co Ltd | Photosensor and manufacturing method therefor |
-
1985
- 1985-10-17 JP JP60229944A patent/JPS6290982A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270229A (en) * | 1989-03-07 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Thin film semiconductor device and process for producing thereof |
JP2001189473A (en) * | 1999-12-28 | 2001-07-10 | Sanyo Electric Co Ltd | Photosensor and manufacturing method therefor |
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