JPS60198517A - Partial plating method of liquid crystal panel - Google Patents

Abstract

PURPOSE:To subject a liquid crystal panel to partial plating selectively to only the lead terminal parts and transparent electrodes requiring low resistance on the substrate thereof by using an SiO2 film as a plating mask. CONSTITUTION:An SiO2 film 4 is sputtered over the entire surface and is then patterned by photoetching to form said film to 1,000-2,000Angstrom thickness on lead terminals 1 and the other transparent electrode patterns 3 except wiring parts 2 which are required to be low in resistance. Only the transparent electrodes requiring metallizing are thereafter plated thereon by SnCl2 sensitizing, PdCl2 activating, immersion into an aq. soln. of NaOH, KOH, potassium borofluoride, etc. and further immersion in an electroless plating bath of an Ni-base alloy such as Ni-P, Ni-B, Ni-Co-P or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for partial plating of liquid crystal panels, and particularly relates to a method for partial plating of liquid crystal panels. This method is characterized by plating only the necessary portions of the transparent electrode using the film as a plating mask.

[Prior art]

Conventionally, the main method of connecting the liquid crystal panel and circuit board is to use conductive rubber or connector pins.
Flexible connection board due to finer pitch between LCD panel terminals? soldering is used. Part 1
ζ-sized liquid crystal panel terminals require metallization using a metal that can be soldered, and the common method for this is sputtering or vapor deposition of U or the like onto Or-. However, these methods have the drawbacks of high coating costs and the need to etch the film into a pattern. A method of plating bonded metals such as electrodeless N1-based alloys has been considered.

The specific method is to first cover the essential parts of the liquid crystal panel substrate with a metskiresist, and then immerse the substrate in an aqueous solution of NaOH, KOH, potassium borofluoride, etc. through S n OIl, 2 sensitizing, and Pt1Ojjl activation. And this? NLP, N
l-B.

It is obtained by immersing it in a non-dissolving plating bath of an N1-based alloy such as IJI-Co-P and peeling off the metal resist.

FIG. 2 is a diagram showing the masking method in this case, in which only the lead terminal 1' is exposed and other transparent electrode patterns, contacts 3'
The top is covered with resist 5.

On the other hand, as the internal wiring of liquid crystal panel substrates becomes finer and elements such as transistors are formed on the liquid crystal panel substrate, the resistance of wiring using transparent electrodes is high, so metallization will also be required on top of them. .

However, in partial plating using the current Metsuki Resist plating mask, acid is released during the plating process.

Since both alkaline solutions are used and there is no photoresist that can withstand both solutions, a photoetching process cannot be used, and therefore detailed masking cannot be performed. Furthermore, the current method has the disadvantage that the plating adheres along the periphery of the mesh resist, requiring an insulating layer to be formed on the transparent electrode at the boundary of the mesh resist.

〔the purpose〕

SUMMARY OF THE INVENTION The present invention eliminates such drawbacks and provides a method for partially plating only the areas on a liquid crystal panel substrate where clear electrode metallization is required.

〔overview〕

The present invention provides a method for selectively plating only the transparent electrodes in the lead terminal portions and wiring portions that require low resistance on the substrate in a liquid crystal panel substrate with transparent electrodes, and is an alternative to the conventional metal plating method. , 8102 film is used as a plating mask.

[Actual example]

FIG. 1 is a diagram showing a practical example of the present invention, in which an 8102 film 4 is formed on the transparent polarization pattern 5 except for the lead terminal 1 and the wiring section 2 which is required to have low resistance. It is. On this day, the 102 membrane was 1000~zoooX thick,
It is formed by sputtering the entire surface and then patterning it by photo etching. Further, if the pattern is simple, it can also be formed using a mask spunter.

810 like this? After forming the film, 8nO11 sensitizing, pacn, activating, Na
Immersion in aqueous solutions such as OH, KOH, potassium borofluoride, etc., and N1-P, Ni = B, N1-Co-P, etc.
Immersion of a single alloy into an electroless plating bath allows plating only on transparent electrodes that require metallization. Further, in this case, no plating adheres to the edges of the StO film.

〔effect〕

In this way, the method of using an 8101 film full plating mask takes time to form the mask, but since the 8102 film can be finely patterned by photoetching, it is ideal as a mask for detailed partial plating, and the edges of the 8102 film can be plated. Since there is no adhesion, there is no need to worry about short circuits.

On the other hand, TPT substrate (Th1n Fln Transis
810 as a so-called DC cut film that cuts the DC current flowing to pixels! Since the film is formed on the transparent electrode, the plating mask can also be used as a D0 cut film.

Therefore, the partial plating method according to the present invention is not only effective in application to panel substrates for liquid crystal televisions, but also effective in application to minute liquid crystal panel substrates with built-in elements such as transistors.

[Brief explanation of the drawing]

FIG. 1 shows the masking method according to the present invention.
, M2 is a plan view showing a conventional masking method in partial plating. 1.1'...Lead terminal 2...Wiring part requiring low resistance 5.6'...Transparent electrode pattern 4...
8t08 Membrane 5...Resist or above Applicant: Suwa Seikosha Co., Ltd.

Claims (1)

[Claims] In a transparent transparent substrate for a liquid crystal panel, excluding lead terminal portions and wiring portions that require low resistance on the substrate, < n
Step 1: Form S"1021 on the bright electrode, and
1. A partial plating method for a liquid crystal panel, characterized in that partial plating is performed selectively only on the lead terminal ends and the transparent electrodes serving as the wiring portions using a No. 102 film as a plating mask.