[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS603587Y2 - light emitting diode board - Google Patents

light emitting diode board

Info

Publication number
JPS603587Y2
JPS603587Y2 JP5537379U JP5537379U JPS603587Y2 JP S603587 Y2 JPS603587 Y2 JP S603587Y2 JP 5537379 U JP5537379 U JP 5537379U JP 5537379 U JP5537379 U JP 5537379U JP S603587 Y2 JPS603587 Y2 JP S603587Y2
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
layer
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5537379U
Other languages
Japanese (ja)
Other versions
JPS55154564U (en
Inventor
昌昭 梅崎
Original Assignee
三洋電機株式会社
鳥取三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社, 鳥取三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP5537379U priority Critical patent/JPS603587Y2/en
Publication of JPS55154564U publication Critical patent/JPS55154564U/ja
Application granted granted Critical
Publication of JPS603587Y2 publication Critical patent/JPS603587Y2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Illuminated Signs And Luminous Advertising (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

【考案の詳細な説明】 本案は発光ダイオード基板に係り、特に高輝度な表示の
行なえる発光ダイオード基板に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light emitting diode substrate, and particularly to a light emitting diode substrate capable of displaying high brightness.

従来第1図に示すような発光ダイオード17を用いた表
示器においては、輝度が不足であるために螢光表示管等
の表示器に普及が阻まれてきたが、この輝度不足には3
つの理由があり、その1つは素子そのものの発光効率が
十分でないことである。
Conventionally, displays using light emitting diodes 17 as shown in FIG. 1 have insufficient brightness, which has prevented the spread of displays such as fluorescent display tubes.
There are two reasons, one of which is that the luminous efficiency of the element itself is not sufficient.

2つめは発光ダイオード17の光が表示器構成部品に吸
収されたり、部品と部品との間の洩れたりして表示に寄
与しない光が出来ることで、特に基板11に吸収される
量が多い。
The second problem is that the light from the light emitting diode 17 is absorbed by the display component parts or leaks between parts, producing light that does not contribute to the display. In particular, a large amount of light is absorbed by the substrate 11.

これは紙エポキシ等の基板11上の電極パターン16.
16の大きさを第2図aの如く発光ダイオード17の取
付に必要な最小限の面積にした場合と、同図すの如く、
反射枠19の底面開口部20よりも大きな面積の電極パ
ターンを用いた場合とで、表示面の明度が50乃至10
0%も異なる事から容易に考案される。
This is an electrode pattern 16 on a substrate 11 such as paper epoxy.
16 is set to the minimum area necessary for mounting the light emitting diode 17 as shown in FIG. 2a, and as shown in the same figure,
When an electrode pattern with an area larger than the bottom opening 20 of the reflective frame 19 is used, the brightness of the display surface is between 50 and 10.
It can be easily devised since the difference is as much as 0%.

3つめの理由として放熱が不充分である時には素子の発
光効率が低下し、寿命も短かくなり、光の波長も長波長
側に移ることである。
The third reason is that when heat dissipation is insufficient, the light emitting efficiency of the element decreases, the life span becomes short, and the wavelength of light shifts to the longer wavelength side.

これは電極パターン16.16を大きくすることである
程度は解消出来るが、小さな表示器や多くの絵素(セグ
メント等)を有する表示器の場合には電極パターンが大
きくとれないし、パルス駆動の時には消費電力の実効値
を一定にするため高い電流値を有するパルスを与えるが
、このような場合にも十分な放熱がなされない。
This can be solved to some extent by enlarging the electrode pattern 16.16, but in the case of a small display or a display with many picture elements (segments, etc.), the electrode pattern cannot be made large, and when pulse driving In order to keep the effective value of power constant, a pulse with a high current value is applied, but even in such a case, sufficient heat is not dissipated.

本案は上記3つの欠点のうち後者2つを改善し、基板の
光吸収率を低下させ、かつ、放熱をよくするものである
The present invention improves the latter two of the above three drawbacks, reduces the light absorption rate of the substrate, and improves heat dissipation.

以下本案を詳細に説明する。第3図は本実施例の要部断
面図で、1は本考案における発光ダイオード基板であり
、次のような構造となっている。
The main proposal will be explained in detail below. FIG. 3 is a sectional view of a main part of this embodiment, and 1 is a light emitting diode substrate according to the present invention, which has the following structure.

基台2として厚さ1.0乃至2.0咽のアルミニウム(
Aりを用い、酸化処理により表面に厚さ10乃至30p
yaのアルマイト層3,4を設ける。
The base 2 is made of aluminum with a thickness of 1.0 to 2.0 mm (
Using A resin, the surface is oxidized to a thickness of 10 to 30p.
ya alumite layers 3 and 4 are provided.

このアルマイト層4の表面に、光反射性の絶縁層5を設
ける。
A light reflective insulating layer 5 is provided on the surface of this alumite layer 4.

この絶縁層5は、例えばエポキシ樹脂とかポリカーボネ
ート等に酸化チタン、亜鉛華、白色顔料又は塗料などの
絶縁性の光反射剤を混入したものを25乃至150μ風
の厚さに印刷等で設けられる。
The insulating layer 5 is formed by printing a mixture of epoxy resin, polycarbonate, etc. with an insulating light reflecting agent such as titanium oxide, zinc white, white pigment, or paint to a thickness of 25 to 150 μm.

この絶縁層5は、アルマイト層4とプリント配線との剥
離を防止するためとりわけアルマイト層4と密着性がよ
いことが必要であるが、光反射性はこの層のみで高い光
反射性をもつ必要はなく、絶縁層表面からアルミニウム
基板に光をあてた時に高い光反射性をもてばよい。
This insulating layer 5 needs to have good adhesion to the alumite layer 4 in order to prevent peeling between the alumite layer 4 and the printed wiring, but this layer alone needs to have high light reflectivity. Rather, it is sufficient to have high light reflectivity when light is applied to the aluminum substrate from the surface of the insulating layer.

そしてこの絶縁層5の上に所定のパターンのプリント配
線の層6を銅箔によって設ける。
Then, on this insulating layer 5, a printed wiring layer 6 having a predetermined pattern is provided using copper foil.

7はこのような発光ダイオード基板1のプリント配線の
層6の上に取付けられたGaP等の発光ダイオードで、
8は配線用の細線、9は樹脂成型品等の反射枠である。
7 is a light emitting diode such as GaP mounted on the printed wiring layer 6 of the light emitting diode substrate 1;
8 is a thin wire for wiring, and 9 is a reflective frame made of resin molding or the like.

本案は発光ダイオード基板1を上述のような構造にした
ので、発光ダイオード7の点灯によって生じた熱は、プ
リント配線の層6と絶縁層5を介してアルミニウムの基
板2及びアルマイト層3.**4に伝わり、広い面積で
外気と接触して放熱される。
In this case, the light emitting diode substrate 1 has the above-described structure, so that the heat generated by lighting the light emitting diode 7 is transferred to the aluminum substrate 2 and the alumite layer 3 through the printed wiring layer 6 and the insulating layer 5. **4, and is radiated by contacting the outside air over a wide area.

又、アルミニウムの基台2はアルマイト層3゜4で覆わ
れているので、外部からの各種刺激や絶縁層5に侵され
ることもない。
Furthermore, since the aluminum base 2 is covered with an alumite layer 3.4, it will not be affected by various external stimuli or be attacked by the insulating layer 5.

さらに発光ダイオード7から放出された光は、プリント
配線の層6、絶縁層5および反射枠9によって有効に表
示面へ導かれる。
Further, the light emitted from the light emitting diode 7 is effectively guided to the display surface by the printed wiring layer 6, the insulating layer 5 and the reflective frame 9.

第1表は従来と本案実施例の表示器の明るさの例を示す
ものである。
Table 1 shows examples of the brightness of the display devices of the conventional and embodiments of the present invention.

第1表 GaP緑色発光ダイオードを用いた表示器 上述したように本案は、アルミニウム基台の表面にアル
マイト層を設け、その上に絶縁性光反射剤の混入された
絶縁層を設け、さらにその上にプリント配線の層を設け
ることによって得られたアルミニウム基板(上述の実施
例でいう発光ダイオード基板)のプリント配線の層の上
に発光ダイオードを取着固定したものであるから、放熱
と光反射性に優れており、高輝度な表示が可能であるか
ら、特に輝度不足が問題となっている緑色発光ダイオー
ドを用いた時やパルス駆動の時などに極めて効果がある
Table 1 Display device using GaP green light emitting diode As mentioned above, in this case, an alumite layer is provided on the surface of an aluminum base, an insulating layer mixed with an insulating light reflector is provided on top of the alumite layer, and then Since the light emitting diode is fixed on the printed wiring layer of the aluminum substrate (the light emitting diode board in the above embodiment) obtained by providing a printed wiring layer on the aluminum substrate, it has excellent heat dissipation and light reflection properties. Since it is excellent in brightness and enables high-brightness display, it is extremely effective especially when using green light-emitting diodes, where insufficient brightness is a problem, or when using pulse drive.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は発光ダイオード表示器の斜視図、第2図は電極
パターン図、第3図は本考案の実施例の要部断面図であ
る。 1・・・・・・発光ダイオード基板(アルミニウム基板
)、2・・・・・・基台、3,4・・・・・・アラマイ
ト層、5・・・・・・絶縁層、6,6・・・・・・プリ
ント配線の層、7・・・・・・発光ダイオード。
FIG. 1 is a perspective view of a light emitting diode display, FIG. 2 is an electrode pattern diagram, and FIG. 3 is a sectional view of a main part of an embodiment of the present invention. 1... Light emitting diode substrate (aluminum substrate), 2... Base, 3, 4... Aramite layer, 5... Insulating layer, 6, 6 ...Printed wiring layer, 7...Light emitting diode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] アルミニウム基台の表面にアルマイト層を設け、その上
に光反射剤を含有し発光ダイオード載置側からの光反射
特性が優れた絶縁層を略全面に設け、さらにその上に導
体薄層を設けることによって得られたアルミニウム基板
の導体薄層上に発光ダイオードを取着した事を特徴とす
る発光ダイオード基板。
An alumite layer is provided on the surface of the aluminum base, on which an insulating layer containing a light reflecting agent and having excellent light reflecting properties from the side on which the light emitting diode is mounted is provided on almost the entire surface, and a conductive thin layer is further provided on top of that. A light emitting diode substrate characterized in that a light emitting diode is mounted on a thin conductive layer of an aluminum substrate obtained by this method.
JP5537379U 1979-04-24 1979-04-24 light emitting diode board Expired JPS603587Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5537379U JPS603587Y2 (en) 1979-04-24 1979-04-24 light emitting diode board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5537379U JPS603587Y2 (en) 1979-04-24 1979-04-24 light emitting diode board

Publications (2)

Publication Number Publication Date
JPS55154564U JPS55154564U (en) 1980-11-07
JPS603587Y2 true JPS603587Y2 (en) 1985-01-31

Family

ID=28951129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5537379U Expired JPS603587Y2 (en) 1979-04-24 1979-04-24 light emitting diode board

Country Status (1)

Country Link
JP (1) JPS603587Y2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680841B2 (en) * 1986-04-07 1994-10-12 株式会社小糸製作所 Lighting equipment
JPH046056Y2 (en) * 1986-12-22 1992-02-19
US20060043382A1 (en) * 2003-02-07 2006-03-02 Nobuyuki Matsui Metal base wiring board for retaining light emitting elements, light emitting source, lightning apparatus, and display apparatus
JP2004259958A (en) * 2003-02-26 2004-09-16 Kyocera Corp Package for housing light emitting element, and light emitting device
US20120256224A1 (en) 2009-12-25 2012-10-11 Fujifilm Corporation Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element
JP2012033853A (en) 2010-04-28 2012-02-16 Fujifilm Corp Insulation light reflection substrate
KR20120022628A (en) 2010-08-16 2012-03-12 후지필름 가부시키가이샤 Radiation reflection plate for led

Also Published As

Publication number Publication date
JPS55154564U (en) 1980-11-07

Similar Documents

Publication Publication Date Title
CN100435362C (en) Light-emitting diode
JP4067802B2 (en) Lighting device
JP5351034B2 (en) LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF
JPH11163412A (en) Led illuminator
JP2007266647A (en) Light emitting device
JP2004039691A (en) Heat conduction wiring board for led lighting device, led lighting device using the same, and method of manufacturing them
JP2001148512A (en) Illuminating light source
WO2004100226A2 (en) Method and apparatus for led panel lamp systems
JP3900848B2 (en) Light emitting diode
JP2006011239A (en) Liquid crystal display device
JPH11284233A (en) Flat mounting type led element
JPS603587Y2 (en) light emitting diode board
JP4877571B2 (en) Light-emitting element mounting substrate
KR101502030B1 (en) LED module for lighting apparatus and method of the same that
JP3938100B2 (en) LED lamp and LED lighting fixture
JPS6133274B2 (en)
JP5209969B2 (en) Lighting system
JP2002246652A (en) Light source device
JP2006245084A (en) Light-emitting device
JP2001148509A (en) Illuminating light source
JP2000353827A (en) Hybrid integrated circuit device
JP4992636B2 (en) Backlight device
JP2001230451A (en) Light emitting diode
JP4292641B2 (en) Surface emitting device
KR101940987B1 (en) Printed circuit board with heatsink for led lighting apparatus