JP3938100B2 - LED lamp and LED lighting fixture - Google Patents
LED lamp and LED lighting fixture Download PDFInfo
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- JP3938100B2 JP3938100B2 JP2003136926A JP2003136926A JP3938100B2 JP 3938100 B2 JP3938100 B2 JP 3938100B2 JP 2003136926 A JP2003136926 A JP 2003136926A JP 2003136926 A JP2003136926 A JP 2003136926A JP 3938100 B2 JP3938100 B2 JP 3938100B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Fastening Of Light Sources Or Lamp Holders (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Device Packages (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は、熱による発光効率の低下、および発光波長の変動を抑えた、信頼性の高いLED照明具に関するものである。
【0002】
【従来の技術】
従来から屋外照明灯、警告灯、ディスプレイ装置等の光源として、LEDディスクリートランプ(511)が搭載されている。しかし、複数のLEDランプを集合体として回路基板(513)に搭載した場合、個々から発生する熱により灯具全体が高温となり、発光効率の低下、信頼性の低下を招く。 その対策として筐体内部へ外気の取り込みの対策、またはLEDディスクリートランプユニットとヒートシンクの空間部をフィラー入り樹脂(512)で埋め、熱拡散を期待している(例えば、特許文献1参照)。
【0003】
しかし、熱の発生源であるLEDチップ搭載部と放熱樹脂(512)は断面0.25mm2のリードフレーム(511a)で繋がっているのみで、放熱効果は極めて悪い。それゆえ、1個当たりのLED素子に注入できる電流値は20mA程度であり、LEDランプの密度が大になればより低電流でしか使用できなくなる。
【0004】
また、LEDディスクリートランプ(511)は回路基板と2本のリードでつながっており、前後または左右のどちらかに傾く可能性があり、集合体として使用する場合は点灯状態で個々の光軸の調整が必要となる欠点がある(図5参照)。
【0005】
一方、銅箔層(617)、絶縁層(616)、金属ベース(615)の積層基板に絞り加工を施し、絞り加工部分にLEDチップを搭載し、金属ベースの貫通穴を通してLEDチップ搭載側のレンズを保持したLEDユニットの製造法が提案されている(例えば、特許文献2参照)。
【0006】
しかし、LED素子を搭載した積層金属基板を樹脂で一体成形するため、ユニットとしての光軸のズレは生じないものの、発光部の配置の変更には基板の絞り用金型、レンズ用金型等高額な金型費用が必要となる。また、熱源であるLED素子は金属基板と絶縁層を介した回路部に搭載されており、LED素子から金属基板への熱抵抗は大きい。かつ、LED素子から離れた部分の金属ベース部からしか熱の除去ができない問題点がある。(図6参照)。
【0007】
【特許文献1】
特開平09−204595号公報(第5頁、図1)
【特許文献2】
特開平06−334224号公報(第4頁、図1)
【0008】
【開発が解決しようとする課題】
上記のようにLED素子で発生した熱の除去が十分でない場合、図9のグラフの従来品Aおよび従来品Bに示すように、低電流値でしか注入電流に比例した光出力が得られず、大電流値では消費電力の無駄が生じると伴に発光素子の寿命も短くなる。また、発光波長についても図10の従来品Aおよび従来品Bに示すように、LED素子の接合部温度上昇に伴い長波長側にシフトし色調が変化する。
【0009】
また、紫外線発光素子を励起光源とし蛍光材を間接的に発光させるLEDランプにおいては発光素子の波長変動により蛍光材の発光効率が大きく影響され、期待される光度および色度が得られない問題がある。
【0010】
【課題を解決するための手段】
LED素子を熱伝導度の大きい材料に搭載し、LED素子の接合部で発生する熱を最短距離である裏面から放熱フィン等に伝導させLED素子の温度上昇を抑えることで、電流値変化による特性の変動を最小限に抑え、特に大電流での発光効率の低下および寿命の短縮を防止する。
【0011】
【発明の実施の形態】
以下、本発明の実施態様を図に基づいて説明する。図4は本発明にかかるLEDランプに使用するフレームの一例を示す斜視図である。表面側に底辺がフラット404aで傾斜した反射面404bを備えた窪みと裏面側に本体403より小さい径の凸部を形成した熱伝導性材料と給電のためのワイヤーボンド可能なフレーム402を接着剤で一体化する。
【0012】
ちなみに、図4の窪み部分について詳細に説明すると、使用するLEDチップの幅をW1とすると、窪み底辺の直径Wは、W1×1.41+0.02mm≦W≦W1×1.41+1.0mmが望ましく、さらに望ましくは、W1×1.41+0.1mm≦W≦W1×1.41+0.5mmである。
【0013】
窪みの深さについては、使用するLEDチップの高さをTとすると、深さHはT≦H<T×5が望ましく、さらに望ましくは、T×2≦H≦T×3である。
【0014】
また、反射面の広がり角度θは、底面に対し30°以上が望ましい、さらに望ましくは45°≦θ≦75°であり、この範囲外ではレンズ面への取り出し効率が低下する。
【0015】
次に、本発明の図1について説明する。放熱プレート103の窪み部底辺のフラット部104aにLEDチップ106を接着樹脂で搭載固定し、LEDチップ106の電極パターンと給電フレームをワイヤーボンドする。上記LEDチップの搭載された放熱フレームを、LEDチップ搭載面がレンズ側になるようモールド用型にセットする。なお、望ましくはLEDチップを搭載した窪み部分に事前にシリコン系柔軟樹脂またはモールド材と同じ樹脂を充填しておくと気泡の混入防止に有効である。
【0016】
続いて、放熱プレ−トの凸部103aが露出するよう透明樹脂を充填する。なお、充填する樹脂は熱硬化、熱可塑のどちらの樹脂を使ってもよい。また、樹脂と凸部段差は、使用する放熱プレートと使用する樹脂の熱膨張係数を考慮し、LED点灯時に放熱プレートの凸部が常に水平、または突出するよう、樹脂充填量を調節しておく。
【0017】
また、図7は上記本発明のLEDランプを使った一例であり、詳細に説明する。穴を開けたエポキシ回路基板713の穴に本発明のLEDランプを配置し、基板の回路とLEDランプの給電フレーム712を半田等、導電性材料で接続固定する。次にLEDランプ裏面側の放熱プレートの突出部に熱伝導性樹脂を塗布し、塗布面をヒートシンク等放熱器のフラット面と接触させる。LEDランプを搭載した基板と放熱器は、熱伝導性樹脂の厚みが薄くなるようネジ、またはリベットにより固定する。
【0018】
【実施例1】
厚さ2mm、直径5.8mmの銅(還元銅)円板を、表面側に底面104aの直径が0.8mm、反射面104bの角度が60°、深さ0.5mmの窪み、裏面側に直径5.0mm、段差0.6mmの凸部103aになるようプレス加工した放熱プレートの表面ドーナツ状フラット面に非導電性接着材ムロマックボンドH−333Cを薄く塗布し、プレスで打ち抜き下地に0.3μmのニッケルめっき、表面に3μmの銀メッキした給電フレーム102を1.0Kg/cm2の加重を掛けた状態で150℃の雰囲気で30分間硬化した。
【0019】
なお、本実施例では接着強度240Kg/cm2を使用したが、硬化後の接着強度が150Kg/cm2以上が望ましい。また、非導電性接着剤の塗布はスタンピング方式で行ったが、スクリーン印刷、ディスペンス方式でもよい。硬化時の加重は2.0〜0.5Kg/cm2が望ましく、加重を大きくすると電気絶縁されない場合が生じやすくなる。また、加重をかけない場合には接着材の厚みが不均一となり硬化後の接着強度にバラツキが生じ信頼性が落ちる原因となる。
【0020】
上記、放熱プレートの窪み底面104aにLEDチップ106(チップサイズ0.32mm角、チップ高さ0.22mm、材質GaN/サファイヤ)を非導電性接着剤ムロマックボンドH386で配置固定し、LEDチップ表面の電極と給電フレーム102をφ25μmの金線105で接続した。LEDチップの固定に使用する非導電性樹脂は、透明または白色樹脂がより望ましく、着色樹脂は光の吸収によりレンズ面への光の取り出し効率が低下する。また、樹脂の色によっては本来のLEDチップの発光色と異なる色度となる不具合が生じる。
【0021】
続いて、LEDチップ搭載の窪み104に透明エポキシ樹脂を予備充填し、チップ搭載面側が下側になるよう金型に装着(金型についてもレンズ面が下)。透明エポキシ樹脂を金型と放熱プレート隙間から放熱プレートの凸部103aとフラットになるよう注入し、120℃で硬化後、金型から取り外しφ7mm、高さ5.1mmのLEDランプ130を作成した。
【0022】
なお、紫外線発光LEDチップを光源として可視光を得る場合は、窪み部104に蛍光剤を混和したシリコン樹脂を注入、硬化後に金型に装着すればよい。また、インサート成形等、他の成形方法を用いれば透明ポリカーボネート樹脂、アクリル樹脂等も使用できる。
【0023】
【実施例2】
上記実施例1と同寸法の放熱プレート303をアルミニウムの溶融成形で作成し、実施例1と同様の方法で給電フレームと一体化した。本放熱プレートの窪み部に、表面にワイヤーボンド可能なAuを蒸着したAlN(サイズ0.5mm角、厚み0.1mm)308を熱導電性樹脂で固定し、その上にLEDチップ306a(チップサイズ0.32mm角、チップ高さ0.25mm、材質AlGaAs/AlGaAs、表面n電極、裏面p電極)を導電性接着剤ムロマックボンドA−71Sで接着した。つづいて、表面n電極と給電フレーム302をφ25μmの金線305aで接続し、もう片方の給電フレーム302とAlN(308)をφ25μmの金線305bで接続した。本実施例では200W/m・KのAlNを使用したが、熱伝導度が150W/m・K以上の材料であれば特に問題は生じなかった。
【0024】
上記LEDチップを搭載した放熱プレートの窪み部に透明シリコン樹脂を充填、熱硬化後、放熱プレートの凸部フラット表面に樹脂が回り込まないよう設計された金型にセットし、透明ポリカーボネート樹脂を金型温度160℃、樹脂温度280℃の条件でインサート成形しLEDランプ130を作成した。
【0025】
【実施例3】
φ7mmの穴を開けたエポキシ回路基板713の穴部に、実施例1で作成した本発明のLEDランプ730をはめ込み、基板上の回路とLEDランプの給電フレームをハンダにより接続した。次に、本LEDランプの搭載された基板裏面に現われる放熱プレートのフラット部103aに熱伝導性材料718(信越化学工業製オイルコンパウンドG751)を塗布し、ヒートシンクに搭載した。LEDランプの搭載された基板とヒートシンクはタッピングネジで固定の後、LEDランプ搭載面のレンズ部を除いて防湿樹脂712(東芝シリコンTSE399)を塗布し、LED照明具を作成した。本実施例では熱伝導率4.5W/m・Kのアルミナ混和シリコンオイルを使用したが、熱伝導性材料の膜厚が0.1mm以下で固定できれば2.0W/m・Kの熱伝導率でも十分特性は確保できた。
【0026】
【実施例4】
内側に半径15mmの反射面および集光レンズ822を備えたヘッド部と放熱効率を向上させるため、外形20mm、厚み2mmの7枚のフィンを備えたヒートシンクをアルミニウム材で作成した。次に、実施例1で作成した本発明のLEDランプの給電プレート102の+極にケーブルを接続し、放熱プレートの凸部103aに熱伝導性材料818(AOS製54012、熱伝導率2.58W/m・K)を塗布、LEDランプのレンズ側がヘッド部側になるようLEDランプをセットした。一方LEDランプの他方の給電フレーム(−極)はヒートシンクと接触させ、ヘッド部をヒートシンクにねじ込みLED照明具を作成した。
【0027】また、導電性金属筐体に本実施例のLED照明具を多数個配置した照明具の場合、制御回路の−極を筐体に接続することで煩雑な配線が不要となる。
【0028】
【比較例1】
実施例3の方法で、本発明のLEDランプ224個を、7個直列32並列の電気回路で、従来品と同じ同心円状に配置したLED照明具を作成した。本比較例を点灯させLEDランプ1個に流れる電流値を基準に、ディスクリートランプを搭載した従来品A、金属積層基板を用いた従来品Bと比較した。図9、図10に示すように、従来品Aは30mA付近まで比例的に出力は増加するものの、50mAを超えると出力は低下した。また、従来品Bについても90mAを超えると出力低下がみられた。発光波長についても、略LEDチップの温度と推測される波長変動をした。
【0029】一方、本比較例で作成したLED照明具は160mAまで略比例的に光度が得られ、発光波長変動についても従来品の1/3〜1/2の変動であった。
【0030】
【発明の効果】
以上説明した通り、本発明のLEDランプおよびLED照明具は熱による特性変動を非常に低く抑えることが可能となる。従って、光度・色度・変換効率等の特性の安定化、超寿命化の優れた効果を奏でる。
【図面の簡単な説明】
【図1】本発明にかかるLEDランプの斜視図である。
【図2】本発明にかかるLEDランプの断面図である。
【図3】本発明にかかるLEDランプの一例を示す断面図である。
【図4】本発明のLEDランプの放熱機構の説明図である。
【図5】従来のLEDランプを搭載したユニットの断面図である。
【図6】従来の金属ベース基板を使ったLEDユニットの断面図である。
【図7】本発明のLEDランプを搭載したLED照明具の断面図である。
【図8】本発明のLEDランプを搭載したLED照明具の断面図である。
【図9】比較例品の光出力を示すグラフ図である。
【図10】比較例品の波長変動を示すグラフ図である。
【符号の説明】
101 透明樹脂
102 給電用フレーム
103 放熱プレート
104 凹部
106 LEDチップ
511 LEDディスクリートランプ
512 放熱樹脂
615 金属基板
616 エポキシ絶縁層
709 ヒートシンク
712 防湿樹脂
713 エポキシ回路基板
718 放熱コンパウンド[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a highly reliable LED illuminator that suppresses a decrease in light emission efficiency due to heat and a change in light emission wavelength.
[0002]
[Prior art]
Conventionally, an LED discrete lamp (511) is mounted as a light source for outdoor illumination lamps, warning lights, display devices, and the like. However, when a plurality of LED lamps are mounted as an aggregate on the circuit board (513), the entire lamp becomes high temperature due to heat generated from each of the lamps, resulting in a decrease in luminous efficiency and reliability. As countermeasures for this, anti-air intake is taken into the inside of the housing, or the space between the LED discrete lamp unit and the heat sink is filled with a resin (512) containing filler, and heat diffusion is expected (for example, see Patent Document 1).
[0003]
However, the LED chip mounting portion, which is a heat generation source, and the heat radiation resin (512) are only connected by a lead frame (511a) having a cross section of 0.25 mm 2 , and the heat radiation effect is extremely poor. Therefore, the current value that can be injected into each LED element is about 20 mA, and if the density of the LED lamp is increased, it can be used only at a lower current.
[0004]
In addition, the LED discrete lamp (511) is connected to the circuit board with two leads, and may be tilted forward or backward or left and right. When used as an assembly, the individual optical axes are adjusted in the lighting state. Is a disadvantage (see FIG. 5).
[0005]
On the other hand, the laminated substrate of the copper foil layer (617), the insulating layer (616), and the metal base (615) is subjected to drawing processing, LED chips are mounted on the drawing processed portions, and the LED chip mounting side is mounted through the through holes of the metal base. A method of manufacturing an LED unit holding a lens has been proposed (see, for example, Patent Document 2).
[0006]
However, since the laminated metal substrate on which the LED elements are mounted is integrally formed with resin, there is no deviation of the optical axis as a unit, but for changing the arrangement of the light emitting part, the substrate die, lens die, etc. High mold costs are required. Moreover, the LED element which is a heat source is mounted on the circuit part through the metal substrate and the insulating layer, and the thermal resistance from the LED element to the metal substrate is large. In addition, there is a problem that heat can be removed only from the metal base portion away from the LED element. (See FIG. 6).
[0007]
[Patent Document 1]
Japanese Patent Laid-Open No. 09-204595 (5th page, FIG. 1)
[Patent Document 2]
Japanese Patent Laid-Open No. 06-334224 (
[0008]
[Problems to be solved by development]
When the heat generated in the LED element is not sufficiently removed as described above, the light output proportional to the injection current can be obtained only at a low current value as shown in the conventional product A and the conventional product B in the graph of FIG. At a large current value, power consumption is wasted and the lifetime of the light emitting element is shortened. Also, as shown in the conventional product A and the conventional product B in FIG. 10, the emission wavelength is shifted to the longer wavelength side and the color tone is changed as the temperature of the junction of the LED element increases.
[0009]
In addition, in LED lamps that emit ultraviolet light indirectly using an ultraviolet light emitting element as an excitation light source, the luminous efficiency of the fluorescent material is greatly affected by the wavelength variation of the light emitting element, and the expected luminous intensity and chromaticity cannot be obtained. is there.
[0010]
[Means for Solving the Problems]
The LED element is mounted on a material with high thermal conductivity, and the heat generated at the junction of the LED element is conducted from the back surface, which is the shortest distance, to the heat radiating fin, etc. Fluctuations are minimized, and in particular, a reduction in luminous efficiency and a shortening of the lifetime at a large current are prevented.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 4 is a perspective view showing an example of a frame used in the LED lamp according to the present invention. A heat conductive material having a recess provided with a reflecting surface 404b whose base is inclined with a flat surface 404a on the front surface side and a convex portion having a diameter smaller than that of the
[0012]
Incidentally, the hollow portion of FIG. 4 will be described in detail. When the width of the LED chip to be used is W1, the diameter W of the hollow bottom is desirably W1 × 1.41 + 0.02 mm ≦ W ≦ W1 × 1.41 + 1.0 mm. More preferably, W1 × 1.41 + 0.1 mm ≦ W ≦ W1 × 1.41 + 0.5 mm.
[0013]
Regarding the depth of the recess, if the height of the LED chip to be used is T, the depth H is preferably T ≦ H <T × 5, and more preferably T × 2 ≦ H ≦ T × 3.
[0014]
Further, the spread angle θ of the reflecting surface is preferably 30 ° or more with respect to the bottom surface, more preferably 45 ° ≦ θ ≦ 75 °, and if it is outside this range, the extraction efficiency to the lens surface is lowered.
[0015]
Next, FIG. 1 of the present invention will be described. The
[0016]
Subsequently, a transparent resin is filled so that the convex portion 103a of the heat radiating plate is exposed. Note that the resin to be filled may be either a thermosetting resin or a thermoplastic resin. In addition, the resin and convex step difference should be adjusted in consideration of the thermal expansion coefficient of the heat dissipation plate used and the resin used so that the convex part of the heat dissipation plate is always horizontal or protruding when the LED is lit. .
[0017]
FIG. 7 shows an example using the LED lamp of the present invention, which will be described in detail. The LED lamp of the present invention is disposed in the hole of the
[0018]
[Example 1]
A copper (reduced copper) disk having a thickness of 2 mm and a diameter of 5.8 mm is formed. The diameter of the bottom surface 104 a is 0.8 mm on the front surface side, the angle of the reflection surface 104 b is 60 °, the depression is 0.5 mm in depth, and the back surface side. A non-conductive adhesive material Muromac Bond H-333C is thinly applied to the surface donut-shaped flat surface of the heat radiating plate that has been press-processed so as to have a convex portion 103a having a diameter of 5.0 mm and a step of 0.6 mm, and punched out with a press to 0 The power supply frame 102 having a nickel plating of 3 μm and a silver plating of 3 μm on the surface was cured in an atmosphere of 150 ° C. for 30 minutes under a load of 1.0 kg / cm 2 .
[0019]
In this example, an adhesive strength of 240 kg / cm 2 was used, but the adhesive strength after curing is preferably 150 kg / cm 2 or more. The non-conductive adhesive is applied by a stamping method, but may be a screen printing or a dispensing method. The weight during curing is preferably 2.0 to 0.5 Kg / cm 2, and when the weight is increased, there is a case where electrical insulation is not likely to occur. In addition, when no weight is applied, the thickness of the adhesive becomes non-uniform, resulting in variations in the adhesive strength after curing, leading to reduced reliability.
[0020]
The LED chip 106 (chip size 0.32 mm square, chip height 0.22 mm, material GaN / sapphire) is placed and fixed on the bottom surface 104 a of the heat sink plate with the non-conductive adhesive Muromac Bond H386, and the LED chip surface The electrode and the feeding frame 102 were connected by a gold wire 105 having a diameter of 25 μm. The non-conductive resin used for fixing the LED chip is more preferably a transparent or white resin, and the colored resin reduces light extraction efficiency to the lens surface due to light absorption. Further, depending on the color of the resin, there is a problem that the chromaticity is different from the light emission color of the original LED chip.
[0021]
Subsequently, a transparent epoxy resin is pre-filled in the
[0022]
In the case where visible light is obtained using an ultraviolet light emitting LED chip as a light source, a silicon resin mixed with a fluorescent agent may be injected into the
[0023]
[Example 2]
A
[0024]
Fill the hollow part of the heat dissipation plate with the LED chip with transparent silicon resin, and after thermosetting, place it in a mold designed so that the resin does not wrap around the convex flat surface of the heat dissipation plate. The LED lamp 130 was produced by insert molding under the conditions of a temperature of 160 ° C. and a resin temperature of 280 ° C.
[0025]
[Example 3]
The LED lamp 730 of the present invention produced in Example 1 was fitted into the hole portion of the
[0026]
[Example 4]
In order to improve the heat dissipation efficiency and the head portion having a reflecting surface having a radius of 15 mm and a condensing lens 822 inside, a heat sink having seven fins having an outer diameter of 20 mm and a thickness of 2 mm was made of an aluminum material. Next, a cable is connected to the positive electrode of the power feeding plate 102 of the LED lamp of the present invention prepared in Example 1, and a heat conductive material 818 (AOS 54001, heat conductivity 2.58 W is formed on the projection 103a of the heat radiating plate. / M · K) was applied, and the LED lamp was set so that the lens side of the LED lamp was on the head side. On the other hand, the other power supply frame (-pole) of the LED lamp was brought into contact with a heat sink, and the head portion was screwed into the heat sink to produce an LED lighting fixture.
Further, in the case of a lighting fixture in which a large number of LED lighting fixtures of this embodiment are arranged in a conductive metal casing, complicated wiring becomes unnecessary by connecting the negative pole of the control circuit to the casing.
[0028]
[Comparative Example 1]
By the method of Example 3, an LED illuminator was produced in which 224 LED lamps of the present invention were arranged in the same concentric shape as a conventional product by 7 series and 32 parallel electric circuits. This comparative example was turned on and compared with a conventional product A equipped with a discrete lamp and a conventional product B using a metal laminated substrate on the basis of the current value flowing through one LED lamp. As shown in FIGS. 9 and 10, the output of the conventional product A increased proportionally to around 30 mA, but the output decreased when it exceeded 50 mA. Also, the output of the conventional product B was reduced when it exceeded 90 mA. As for the emission wavelength, the wavelength was estimated to be approximately the temperature of the LED chip.
On the other hand, the LED illuminator prepared in this comparative example has a luminous intensity approximately proportionally up to 160 mA, and the emission wavelength fluctuation was also 1/3 to 1/2 that of the conventional product.
[0030]
【The invention's effect】
As described above, the LED lamp and the LED illuminator of the present invention can suppress characteristic fluctuation due to heat very low. Therefore, the effects of stabilizing characteristics such as luminosity, chromaticity, and conversion efficiency and extending the life span are obtained.
[Brief description of the drawings]
FIG. 1 is a perspective view of an LED lamp according to the present invention.
FIG. 2 is a cross-sectional view of an LED lamp according to the present invention.
FIG. 3 is a cross-sectional view showing an example of an LED lamp according to the present invention.
FIG. 4 is an explanatory diagram of a heat dissipation mechanism of the LED lamp of the present invention.
FIG. 5 is a cross-sectional view of a unit equipped with a conventional LED lamp.
FIG. 6 is a cross-sectional view of an LED unit using a conventional metal base substrate.
FIG. 7 is a cross-sectional view of an LED illuminator equipped with the LED lamp of the present invention.
FIG. 8 is a cross-sectional view of an LED lighting device equipped with the LED lamp of the present invention.
FIG. 9 is a graph showing the light output of a comparative product.
FIG. 10 is a graph showing wavelength variation of a comparative example product.
[Explanation of symbols]
DESCRIPTION OF
Claims (2)
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JP2003136926A JP3938100B2 (en) | 2003-05-15 | 2003-05-15 | LED lamp and LED lighting fixture |
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JP2003136926A JP3938100B2 (en) | 2003-05-15 | 2003-05-15 | LED lamp and LED lighting fixture |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2006080729A1 (en) | 2004-10-07 | 2006-08-03 | Seoul Semiconductor Co., Ltd. | Side illumination lens and luminescent device using the same |
KR100579397B1 (en) | 2004-12-16 | 2006-05-12 | 서울반도체 주식회사 | Light emitting diode package employing a heat sink having a direct connection to a lead frame |
KR101142940B1 (en) | 2005-06-22 | 2012-05-10 | 서울반도체 주식회사 | Light-emitting diode with heat sink-fin |
TW200709475A (en) | 2005-06-27 | 2007-03-01 | Lamina Ceramics Inc | Light emitting diode package and method for making same |
KR100703094B1 (en) * | 2005-10-12 | 2007-04-06 | 삼성전기주식회사 | Led back light unit |
JP4922607B2 (en) * | 2005-12-08 | 2012-04-25 | スタンレー電気株式会社 | LED light source device |
EP1816688B1 (en) * | 2006-02-02 | 2016-11-02 | LG Electronics Inc. | Light emitting diode package |
JP4575890B2 (en) * | 2006-03-06 | 2010-11-04 | オスラム・メルコ株式会社 | Fish lamp |
US20080089072A1 (en) * | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
KR100977318B1 (en) | 2008-06-05 | 2010-08-23 | 주식회사 에이팩 | Pendent type LED Lighting |
JP2010093008A (en) * | 2008-10-07 | 2010-04-22 | 3Force:Kk | Light emitting diode unit and luminaire |
CN101655187B (en) * | 2008-12-17 | 2011-11-23 | 马士科技有限公司 | LED reflector lamp |
KR100920111B1 (en) * | 2008-12-19 | 2009-10-01 | 주식회사 지앤에이치 | Heat sink device of light emitting diode module for lighting equipment |
EP2346100B1 (en) * | 2010-01-15 | 2019-05-22 | LG Innotek Co., Ltd. | Light emitting apparatus and lighting system |
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