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JPS60143884A - Washing method - Google Patents

Washing method

Info

Publication number
JPS60143884A
JPS60143884A JP25006883A JP25006883A JPS60143884A JP S60143884 A JPS60143884 A JP S60143884A JP 25006883 A JP25006883 A JP 25006883A JP 25006883 A JP25006883 A JP 25006883A JP S60143884 A JPS60143884 A JP S60143884A
Authority
JP
Japan
Prior art keywords
cleaning
sample
active oxygen
solution
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25006883A
Other languages
Japanese (ja)
Inventor
長島 節夫
有井 勝之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25006883A priority Critical patent/JPS60143884A/en
Publication of JPS60143884A publication Critical patent/JPS60143884A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (1) 発明の技術分野 本発明は、ガラス基板、ボトマスク、ウェハー等の試料
の洗浄に係り、特に試料を洗浄するH 202系洗浄液
に遠紫外線を照射するようにした洗浄方法に関する。
[Detailed Description of the Invention] (1) Technical Field of the Invention The present invention relates to the cleaning of samples such as glass substrates, bottom masks, wafers, etc. In particular, the H202-based cleaning solution for cleaning the samples is irradiated with far ultraviolet rays. Regarding cleaning methods.

(2) 技術の背景 近年、半導体装置が高築積化となるに伴い、半導体装置
の各製造工程では更に高精度の製造が要求されている。
(2) Background of the Technology In recent years, as semiconductor devices have become more expensive to build, even higher precision manufacturing is required in each manufacturing process of semiconductor devices.

前記製造各工程の重要な1つに試料の洗浄工程が有り1
種々の方法がとられている。
One of the important steps in the manufacturing process is the sample cleaning process1.
Various methods have been used.

この種々の洗浄方法には活性酸素を発生させる溶液に試
料を浸漬し、この試料表面に付着している有機系ダスト
を分解、除去するものが有る。しかし前記方法は所定時
間径ると活性酸素が発生しなくなってしまう為に試料が
有効に洗浄されないのが現状となっている。
Among these various cleaning methods, there is a method in which a sample is immersed in a solution that generates active oxygen to decompose and remove organic dust adhering to the surface of the sample. However, in the above-mentioned method, active oxygen is no longer generated after a predetermined period of time, so that the sample cannot be effectively cleaned.

(3)−従来技術と問題点 従来、試料表面を洗浄する方法の1つに第1図に示す様
な洗浄液1に試料2を浸漬して行なう装置がある。第1
図に於いて、容器3内の洗浄液1例えば過酸化水1(H
2O2)にアンモニア(NHaOH)を加えてH2O2
系溶液に洗浄する試料2が浸漬されている。前記過酸化
水素にアンモニアを加え、更に加熱し例えば50℃なる
一定温度にすることで、活性酸素の原子状酸素(0)が
発生する。活性酸素は試料2表面に付着している有機系
ダストと酸化反応し、この有機系ダストを分解、除去す
る。尚、洗浄液としては過酸化水素(H2O2)に硫酸
(82804)、過酸化水素(H2O2)に塩酸(HC
I)を加えたH2O2系溶液でも良い。
(3) - Prior Art and Problems Conventionally, one of the methods for cleaning the surface of a sample is an apparatus shown in FIG. 1 in which a sample 2 is immersed in a cleaning liquid 1. 1st
In the figure, a cleaning liquid 1, for example, peroxide water 1 (H
2O2) by adding ammonia (NHaOH) to H2O2
A sample 2 to be cleaned is immersed in the system solution. By adding ammonia to the hydrogen peroxide and further heating it to a constant temperature of, for example, 50° C., atomic oxygen (0), which is active oxygen, is generated. The active oxygen undergoes an oxidation reaction with organic dust adhering to the surface of the sample 2, decomposing and removing this organic dust. In addition, as a cleaning solution, hydrogen peroxide (H2O2) and sulfuric acid (82804), hydrogen peroxide (H2O2) and hydrochloric acid (HC
A H2O2-based solution containing I) may also be used.

−しかしながら、洗浄液は過酸化水素(H202)に硫
酸(H2SO4)、アンモニア(NHaOH)、塩酸(
Hcl)を加えて化学反応により活性酸素である原子状
酸素(0)を発生しており。
- However, the cleaning solution is hydrogen peroxide (H202), sulfuric acid (H2SO4), ammonia (NHaOH), hydrochloric acid (
Hcl) is added to generate atomic oxygen (0), which is active oxygen, through a chemical reaction.

この原子状酸素(0)が酸化反応し酸素(02)に戻っ
てしまい洗浄効果がなくなる問題を有していた。
This atomic oxygen (0) undergoes an oxidation reaction and returns to oxygen (02), resulting in a problem in which the cleaning effect is lost.

(4) 発明の目的 本発明は上記従来の問題点に鑑み、H2O2系溶液の洗
浄液に遠紫外線を照射すること、試料表面の有機系ダス
ト等と反応して出来た酸素(02)を再分解により活性
酸素とすると共に、活性酸素のエネルギーが高められ、
試料表面の洗浄に寄与する洗浄方法を提供する事を目的
とする。
(4) Purpose of the invention In view of the above-mentioned conventional problems, the present invention involves irradiating a cleaning solution of H2O2 solution with far ultraviolet rays and re-decomposing oxygen (02) produced by reacting with organic dust etc. on the sample surface. In addition to converting it into active oxygen, the energy of active oxygen is increased,
The purpose is to provide a cleaning method that contributes to cleaning the sample surface.

(5) 発明の構成 そして、この目的は本発明によれば試料を)I 202
系洗浄液に浸漬し、且つ該H2O2系洗浄液に遠紫外線
を照射しながら洗浄を行なうことを特徴とする洗浄方法
を提供する事によって達成される。
(5) Structure of the invention and this purpose is to prepare a sample according to the invention) I 202
This is achieved by providing a cleaning method characterized by immersing in a H2O2-based cleaning solution and performing cleaning while irradiating the H2O2-based cleaning solution with far ultraviolet rays.

(6) 発明の実施例 以下本発明の実施例を図面に基づいて詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below based on the drawings.

第2図は本発明の一実施例の洗浄方法を説明する概略的
構成図である。尚、第1図と同一部分には同一符号を付
し重複説明を省略する。
FIG. 2 is a schematic diagram illustrating a cleaning method according to an embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals and redundant explanation will be omitted.

第2図に於いて+ H2O2系溶液の洗浄液1が入る容
器3の周側部には遠紫外線光源4が設けられている。そ
してガラス基板、ホトマスク、ウェハー等の試料2は前
記洗浄液1に浸漬する事により洗浄される。尚1図示し
ないが前記洗浄液1を加熱し、一定に保温する装置が例
えば容器3の周側部に設けられている。
In FIG. 2, a deep ultraviolet light source 4 is provided on the peripheral side of a container 3 containing a +H2O2-based cleaning solution 1. A sample 2 such as a glass substrate, a photomask, or a wafer is then cleaned by immersing it in the cleaning liquid 1. Although not shown, a device for heating the cleaning liquid 1 and keeping it at a constant temperature is provided, for example, on the peripheral side of the container 3.

洗浄液1は過酸化水素(H2O2)に硫酸(H2SOa
)あるいはアンモニア(NHaOH)、塩酸(HCI)
が加えられ加熱され2例えば50℃の一定に保温されて
いる。洗浄液1は化学反応し、活性酸素の原子状酸素(
0)を発生させる。そして洗浄液1に浸漬する試料2は
この表面に付着している有機系ダストが活性酸素と酸化
反応により分解、除去されて洗浄される。この時。
Cleaning solution 1 contains hydrogen peroxide (H2O2) and sulfuric acid (H2SOa).
) or ammonia (NHaOH), hydrochloric acid (HCI)
is added, heated, and kept at a constant temperature of, for example, 50°C. The cleaning liquid 1 undergoes a chemical reaction to form active oxygen, atomic oxygen (
0) is generated. The sample 2 immersed in the cleaning liquid 1 is cleaned by decomposing and removing organic dust adhering to the surface through an oxidation reaction with active oxygen. At this time.

容器3の周側部に設けられている遠紫外線光源4から放
射される遠紫外線は試料2表面に付着している有機系ダ
ストが活性酸素により分解、除去されるのを促進させる
と共に酸化反応で活性酸素が02ガスと成ったものを再
び活性酸素にする働きをする。従って遠紫外線を照射し
ない場合、洗浄液lは化学反応で酸化すると活性酸素を
発生せず。
The far ultraviolet rays emitted from the far ultraviolet light source 4 provided on the peripheral side of the container 3 promote decomposition and removal of organic dust attached to the surface of the sample 2 by active oxygen, and also cause an oxidation reaction. It works to convert active oxygen that has become 02 gas back into active oxygen. Therefore, if far ultraviolet rays are not irradiated, the cleaning solution 1 will not generate active oxygen when it is oxidized by a chemical reaction.

試料2の洗浄効果が無くなる。しかしながら、前述した
如く化学反応により活性酸素を得る外に遠紫外線の照射
でこの活性酸素が高エネルギーとなり、更に02ガスが
再分解されオゾン化することにより活性酸素が得られる
ので、試料2に付着している有機系ダスト等9分解、除
去が速やかに行なわれる。すなわち、長時間洗浄液1を
利用でき。
The cleaning effect of sample 2 is lost. However, as mentioned above, in addition to obtaining active oxygen through chemical reactions, this active oxygen becomes high energy by irradiation with far ultraviolet rays, and active oxygen is obtained by re-decomposing the 02 gas and turning it into ozone, so it adheres to sample 2. The decomposition and removal of organic dust, etc., is carried out quickly. That is, the cleaning liquid 1 can be used for a long time.

効果的な洗浄が行なえる。また遠紫外線光源4から放射
される短波長光1B、4.9nm、253゜7nm等は
直接試料2表面に付着している有機系高分子ポリマー等
のチェーンを切断し、低分子化とし分解、除去を促進し
ている。一方、洗浄液1に純水、或い゛は他の水溶液と
して有機溶剤(アルコール、ケトン類等)を用いた場合
も、遠紫外線を照射するならば、前述と同じ働きで、こ
の洗浄液1に浸漬した試料表面に付着している有機系高
分子は低分子化とする事ができる。
Effective cleaning can be performed. In addition, the short wavelength light 1B, 4.9 nm, 253°7 nm, etc. emitted from the far ultraviolet light source 4 directly cuts the chains of organic polymers etc. attached to the surface of the sample 2, converts them into lower molecules, and decomposes them. We are promoting removal. On the other hand, even if pure water is used as the cleaning solution 1 or an organic solvent (alcohol, ketones, etc.) is used as another aqueous solution, if far ultraviolet rays are irradiated, immersion in this cleaning solution 1 will have the same effect as described above. The organic polymer adhering to the sample surface can be reduced in molecular weight.

(7) 発明の効果 以上詳細に説明したように9本発明の洗浄方法によれば
、活性酸素のエネルギーを高める事ができ、そしてHt
 OR系溶液の化学反応で発生する活性酸素が酸化反応
等で元に戻った酸素(o2)を再分解し、活性酸素とす
ることができるので。
(7) Effects of the Invention As explained in detail above, the cleaning method of the present invention can increase the energy of active oxygen, and
This is because the active oxygen generated in the chemical reaction of the OR system solution can re-decompose the oxygen (O2) returned to its original state through oxidation reactions, etc., and turn it into active oxygen.

ガラス基板、ホトマスク、ウェハー等の試料を有効に効
率良く洗浄できる効果大なるものがある。
It has a great effect in effectively and efficiently cleaning samples such as glass substrates, photomasks, and wafers.

【図面の簡単な説明】 第1図は従来の試料洗浄処理方法を説明する概略的構成
図、第2図は本発明の一実施例を説明する概略的構成図
である。 1・・・洗浄液、 2・・・試料。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram illustrating a conventional sample cleaning method, and FIG. 2 is a schematic diagram illustrating an embodiment of the present invention. 1...Cleaning liquid, 2...Sample.

Claims (1)

【特許請求の範囲】[Claims] (1) 試料をH202系洗浄液に浸漬し、且つ該H2
O2系洗浄液に遠紫外線を照射しながら洗−浄を行なう
ことを特徴とする洗浄方法。
(1) Immerse the sample in H202-based cleaning solution, and
A cleaning method characterized by performing cleaning while irradiating an O2-based cleaning solution with far ultraviolet rays.
JP25006883A 1983-12-28 1983-12-28 Washing method Pending JPS60143884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25006883A JPS60143884A (en) 1983-12-28 1983-12-28 Washing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25006883A JPS60143884A (en) 1983-12-28 1983-12-28 Washing method

Publications (1)

Publication Number Publication Date
JPS60143884A true JPS60143884A (en) 1985-07-30

Family

ID=17202325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25006883A Pending JPS60143884A (en) 1983-12-28 1983-12-28 Washing method

Country Status (1)

Country Link
JP (1) JPS60143884A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153982A (en) * 1984-01-23 1985-08-13 株式会社東芝 Surface washing method
JPH04179225A (en) * 1990-11-14 1992-06-25 Ebara Res Co Ltd Cleaning method
JPH05271973A (en) * 1992-03-25 1993-10-19 Orc Mfg Co Ltd Ultraviolet cleaning method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153982A (en) * 1984-01-23 1985-08-13 株式会社東芝 Surface washing method
JPH04179225A (en) * 1990-11-14 1992-06-25 Ebara Res Co Ltd Cleaning method
JPH05271973A (en) * 1992-03-25 1993-10-19 Orc Mfg Co Ltd Ultraviolet cleaning method

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