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JPH04179225A - Cleaning method - Google Patents

Cleaning method

Info

Publication number
JPH04179225A
JPH04179225A JP30629490A JP30629490A JPH04179225A JP H04179225 A JPH04179225 A JP H04179225A JP 30629490 A JP30629490 A JP 30629490A JP 30629490 A JP30629490 A JP 30629490A JP H04179225 A JPH04179225 A JP H04179225A
Authority
JP
Japan
Prior art keywords
acid
cleaned
cleaning
ultraviolet rays
hydrogen peroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30629490A
Other languages
Japanese (ja)
Other versions
JPH07114191B2 (en
Inventor
Yoko Iwase
岩瀬 葉子
Takayuki Saito
孝行 斉藤
Takeshi Nakajima
健 中島
Manabu Tsujimura
学 辻村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Ebara Research Co Ltd
Original Assignee
Ebara Corp
Ebara Research Co Ltd
Ebara Infilco Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Ebara Research Co Ltd, Ebara Infilco Co Ltd filed Critical Ebara Corp
Priority to JP2306294A priority Critical patent/JPH07114191B2/en
Publication of JPH04179225A publication Critical patent/JPH04179225A/en
Publication of JPH07114191B2 publication Critical patent/JPH07114191B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent surroundings from being contaminated, to easily control a cleaning process and to realize a high-grade cleaning operation by a method wherein an object to be cleaned is immersed in a cleaning liquid which contains an acid and hydrogen peroxide and/or ozone and it is irradiated with ultraviolet rays. CONSTITUTION:An object 8 to be cleaned is immersed in a cleaning liquid which contains an acid and hydrogen peroxide and/or ozone in a chemical-liquid tank 3. It is irradiated with ultraviolet rays from a light source 2. For the acid, e.g. sulfuric acid, hydrochloric acid or the like as an inorganic acid is used and formic acid, acetic acid or the like as an organic acid is used. The mixture ratio of the acid or an alkali agent to the hydrogen peroxide is set at 1:10 to 10:1. When ultraviolet rays are irradiated, molecules which have absorbed the ultraviolet rays are reacted with a contaminant more effectively than heated molecules, and the organic contaminant on the object to be cleaned is oxidized and decomposed. In addition, it is not required to take into consideration a drop in the temperature of a chemical liquid when the object to be cleaned is immersed; the object can be cleaned by the chemical liquid in small quantities. As a result, it is possible to always supply a new chemical liquid.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ウェハ等の精密加工工程における有機
汚染物質の洗浄方法、特にレジスト等の除去方法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for cleaning organic contaminants in precision processing of semiconductor wafers, etc., and particularly to a method for removing resists and the like.

〔従来の技術〕[Conventional technology]

従来、被洗浄物上のレジスト等の有機汚染物質の除去方
法としては、溶解方法と酸化分解方法とがある。
Conventionally, methods for removing organic contaminants such as resist on objects to be cleaned include a dissolution method and an oxidative decomposition method.

溶解法は、汚染有機物質に対して溶解力のある溶媒を作
用させて、溶媒中に汚染物質を溶解することによって被
洗浄物表面から除去する方法である。この溶媒としては
、主に有機溶媒、例えばトリクロロエチレン、テトラク
ロロエチレン、メチルクロロホルム等の塩素系溶剤、フ
ロン類、及びエチルアルコール、メチルアルコール、イ
ソプロピルアルコール等のアルコール類が用いられる。
The dissolution method is a method in which a solvent having a dissolving power acts on a contaminant organic substance to dissolve the contaminant in the solvent and thereby remove the contaminant from the surface of the object to be cleaned. As this solvent, mainly organic solvents such as chlorinated solvents such as trichloroethylene, tetrachloroethylene, and methyl chloroform, fluorocarbons, and alcohols such as ethyl alcohol, methyl alcohol, and isopropyl alcohol are used.

また界面活性剤の溶液も用いられる。Solutions of surfactants may also be used.

酸化分解法は、有機汚染物質に酸化剤を反応させて、表
面から分解除去させる方法であり、乾式方式と湿式方式
とがある。乾式には、例えば数百度に加熱する方法、酸
素プラズマと接触させる方法、オゾン存在下で紫外線を
照射する方法がある。また湿式方式は、酸化力の強い薬
液で処理する方法である。湿式酸化分解法には、例えば
、濃硫酸に酸化剤として硝酸、過酸化水素等を添加して
加熱する方法、過酸化水素のアルカリ液で加熱する方法
があり、また酸化剤に浸漬して超音波照射する方法等が
ある。
The oxidative decomposition method is a method in which organic pollutants are reacted with an oxidizing agent to be decomposed and removed from the surface, and there are two methods: a dry method and a wet method. Dry methods include, for example, a method of heating to several hundred degrees, a method of contacting with oxygen plasma, and a method of irradiating ultraviolet rays in the presence of ozone. The wet method is a method in which treatment is performed using a chemical solution with strong oxidizing power. Wet oxidation decomposition methods include, for example, adding nitric acid, hydrogen peroxide, etc. as an oxidizing agent to concentrated sulfuric acid and heating it, heating it with an alkaline solution of hydrogen peroxide, and immersing it in an oxidizing agent and heating it. There are methods such as applying sound waves.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

有機溶媒を用いて溶解させる方法では、アルコール類の
ような可燃性溶媒には、火災予防上の問題点がある。ま
たトリクロロエチレン等の塩素系溶剤は、労働2Dテ生
上の問題点がある。フロン類はオゾン層破壊の原因とし
て利用制限ないし全廃が、世界的に求められている。さ
らに塩素系溶剤及びフロン類等は化学的に安定な物質で
あって分解法はかなり低いため、補充量に相当する量は
、何らかの形で環境中に排出されている。環境中に排出
されたこれら有機溶媒は、地下水及び大気等の汚染の原
因となり、特に地下水汚染は飲料水汚染に直結し、重大
な問題となっている。
In the method of dissolving using an organic solvent, flammable solvents such as alcohols have problems in terms of fire prevention. In addition, chlorinated solvents such as trichlorethylene have problems in terms of labor 2D treatment. There is a worldwide call for the use of fluorocarbons to be restricted or completely abolished as they cause ozone layer depletion. Furthermore, since chlorinated solvents, fluorocarbons, etc. are chemically stable substances and their decomposition methods are quite low, the amount equivalent to the amount of replenishment is discharged into the environment in some form. These organic solvents discharged into the environment cause contamination of groundwater, the atmosphere, etc. In particular, groundwater contamination is directly linked to drinking water contamination, and has become a serious problem.

界面活性剤溶液は、油汚れ(液状の分子量のあまり大き
くない有機物質)の除去に用いられる。しかし界面活性
剤はその性質上被洗浄物表面に強く吸着するため、洗浄
後すすぎを行っても残留し、完全に除去するためにはさ
らに酸化分解等が必要となる。また界面活性剤の親水基
は一般にアルカリ金属イオンを対イオンとして解離する
ため、金属汚染の原因となる可能性がある。
The surfactant solution is used to remove oil stains (liquid organic substances with a relatively low molecular weight). However, due to their nature, surfactants strongly adsorb to the surface of the object to be cleaned, so they remain even after rinsing after cleaning, and further oxidative decomposition is required to completely remove them. Furthermore, since the hydrophilic groups of surfactants generally dissociate from alkali metal ions as counterions, they may cause metal contamination.

湿式酸化分解では、腐食性の強い薬液を使用し、加熱し
ているため十分な安全対策が必要である。また、薬液の
揮散、分解、反応生成物等の不純物質の混入等が起こる
ため薬液の管理が重要であるが、高温の薬液に耐性のあ
る測定機器、浄化設備は少ない。
Wet oxidative decomposition uses highly corrosive chemicals and heats them, so sufficient safety measures are required. In addition, management of chemical solutions is important because they can volatilize, decompose, and get mixed with impurities such as reaction products, but there are few measuring instruments and purification equipment that can withstand high-temperature chemicals.

乾式酸化分解法では、有機物質の分解除去に長時間必要
であり、また汚染物質量が多い場合には、オゾン及び紫
外線照射量等の条件によっては、汚染物質が変質して逆
に除去が困難になり、有機溶剤等による前洗浄が必要等
の問題点がある。
In the dry oxidative decomposition method, it takes a long time to decompose and remove organic substances, and if the amount of pollutants is large, depending on conditions such as ozone and UV irradiation, the pollutants may change in quality and become difficult to remove. There are problems such as the need for pre-cleaning with an organic solvent or the like.

以上のように、従来の洗浄方法では、地球環境の汚染、
被洗浄物の洗浄薬液による汚染、薬液管理の困難さ、洗
浄に長時間必要等の問題点があった。
As mentioned above, conventional cleaning methods do not pollute the global environment,
There have been problems such as contamination of objects to be cleaned by the cleaning chemicals, difficulty in managing the chemicals, and the need for a long time for cleaning.

本発明は、オゾン層破壊等の環境汚染の原因となるフロ
ン類等の有機溶媒を用いず、洗浄工程の制御が容易で、
高度に洗浄された被洗浄物を得る方法を提案することを
目的とする。
The present invention does not use organic solvents such as fluorocarbons that cause environmental pollution such as depletion of the ozone layer, and the cleaning process can be easily controlled.
The purpose of this paper is to propose a method for obtaining highly cleaned objects.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するために、本発明では、被洗浄物を、
酸と過酸化水素及び/又はオゾンとを含む洗浄液中に浸
漬させ、紫外線を照射することによる洗浄方法としたも
のであり、また本発明では、被洗浄物を、アンモニア又
はアミン類と、過酸化水素及び/又はオゾンとを含む洗
浄液中に浸漬させ、紫外線を照射することによる洗浄方
法としたものである。
In order to achieve the above object, in the present invention, the object to be cleaned is
This cleaning method involves immersing the object in a cleaning solution containing acid, hydrogen peroxide, and/or ozone, and irradiating it with ultraviolet rays. This cleaning method involves immersing it in a cleaning solution containing hydrogen and/or ozone and irradiating it with ultraviolet light.

ここで、酸としては、例えば無機酸として硫酸、塩酸、
硝酸、弗酸等を、有機酸としてはぎ酸、酢酸、しゅう酸
等を用いることが出来る。
Here, examples of acids include sulfuric acid, hydrochloric acid, and inorganic acids.
Nitric acid, hydrofluoric acid, etc. can be used, and as organic acids, formic acid, acetic acid, oxalic acid, etc. can be used.

またアミン類としては、コリン、ジエチルアミン等を用
いることが出来る。
Further, as the amines, choline, diethylamine, etc. can be used.

酸またはアルカリ剤と、過酸化水素との混合割合として
は、1:10〜10:1とすることが出来、1:1〜5
:1が好ましい。さらに、酸またはアルカリ剤、または
この混合溶液にさらにオゾンを溶解させた液を用いるこ
ともできる。
The mixing ratio of the acid or alkaline agent and hydrogen peroxide can be 1:10 to 10:1, and 1:1 to 5.
:1 is preferable. Furthermore, it is also possible to use an acid or alkali agent, or a solution in which ozone is further dissolved in a mixed solution thereof.

そして前記洗浄方法において、紫外線の照射光源として
は、波長400nm以下の紫外線を照射するものであれ
ばよく、よりエネルギーの高い波長である2 00 n
m以下を照射できる光源がより好ましい。
In the cleaning method, the ultraviolet irradiation light source may be one that irradiates ultraviolet rays with a wavelength of 400 nm or less, including a wavelength of 200 nm with higher energy.
A light source that can irradiate light below m is more preferable.

〔作 用〕[For production]

リングラフィに用いられるレジスト等の高分子有機物質
の多くは、波長300nm以下の紫外線を吸収する。ま
た洗浄薬剤も紫外線を吸収する。例えば、硫酸で188
nm、硝酸で303nm、アンモニアで189nmに吸
収ピークがある。
Many of the polymeric organic substances used in phosphorography, such as resists, absorb ultraviolet rays with a wavelength of 300 nm or less. Cleaning chemicals also absorb UV rays. For example, 188 with sulfuric acid
There is an absorption peak at 303 nm for nitric acid and 189 nm for ammonia.

一方、紫外線のエネルギーは、代表的な紫外線光源であ
る低圧水銀ランプの主波長の1つである2 54 nm
では約470 kJ/mol、また185nmでは約6
50 kJ/molであり、多くの有機物質の結合解離
エネルギーに十分匹敵する。
On the other hand, the energy of ultraviolet light is 254 nm, which is one of the main wavelengths of a low-pressure mercury lamp, which is a typical ultraviolet light source.
at about 470 kJ/mol, and at 185 nm about 6
It is 50 kJ/mol, which is fully comparable to the bond dissociation energy of many organic substances.

ここで、薬液を100℃程度に加熱した場合には、モル
熱容量は一般に数十から数百J/K・molであるから
、加熱した薬液が常温に比較し−ご余分に1)つエネル
ギーは数+kJ/mol程度である。例えば、硫酸を加
熱した場合は、モル熱容量が約140 J /に−mo
+であるから、加熱した硫酸では液中のほとんどすべて
の分子が、それぞれ10〜20 kJ/molのエネル
ギーを余分に持つ。また過酸化水素では、モル熱容量が
約9DJ / K −molであるから、7 kJ/m
o1程度の余分のエネルギーを持つことになる。このと
き、実際に反応する分子はごく僅かであるから、残りの
分子の持つエネルギーは有効に利用されていない。
Here, when a chemical solution is heated to about 100°C, the molar heat capacity is generally several tens to hundreds of J/K mol, so the heated chemical solution has an extra energy of 1) compared to room temperature. approximately + kJ/mol. For example, when sulfuric acid is heated, its molar heat capacity is approximately 140 J/-mo
+, so in heated sulfuric acid, almost all molecules in the liquid each have an extra energy of 10 to 20 kJ/mol. Furthermore, hydrogen peroxide has a molar heat capacity of approximately 9 DJ/K-mol, so 7 kJ/m
It will have an extra energy of about o1. At this time, only a small number of molecules actually react, so the energy of the remaining molecules is not used effectively.

紫外線を照射した場合には、紫外線を吸収した分子は励
起され、数百に、I/molのエネルギーを余分に持つ
ことになり、分子あたりではこのエネルギーは加熱によ
って得られるエネルギーより大きい。、二のため、紫外
線を吸収した分子は、加熱分子3より効果的に汚染物質
と反応する。
When irradiated with ultraviolet light, molecules that have absorbed the ultraviolet light are excited and have hundreds of I/mol of extra energy, which is greater per molecule than the energy obtained by heating. , 2, the molecules that have absorbed the ultraviolet light react with the pollutants more effectively than the heated molecules 3.

従って、被洗浄物を薬液中に浸漬して紫外線を照射する
ことによって、被洗浄物−ヒの有機汚染物質が効果的に
酸化分解される。また、洗浄薬液に溶解する分解生成物
は系外に排出されるためUVと[]3等のドライ方式と
異なり、C02まで完全酸化する必要はない。
Therefore, by immersing the object to be cleaned in a chemical solution and irradiating it with ultraviolet rays, the organic contaminants on the object to be cleaned are effectively oxidized and decomposed. Furthermore, since the decomposition products dissolved in the cleaning chemical solution are discharged outside the system, there is no need for complete oxidation to CO2, unlike dry methods such as UV and []3.

さらに、薬液加温用のヒーターが不要のため汚染が低減
される、液温か低いため、薬液の揮散及び変質が抑制さ
れる、薬液晶質の分析は常温のほうが容易であるため薬
液晶質管理が容易である等の利点がある。
In addition, contamination is reduced because a heater for heating the chemical solution is not required; volatilization and deterioration of the chemical solution are suppressed because the liquid temperature is low; analysis of drug liquid crystals is easier at room temperature, so drug liquid crystalline management It has the advantage of being easy to use.

さらに、被洗浄物の投入による薬液温度の低下を考慮す
る必要がなく、薬液量が少量で洗浄可能であるため、常
時新しい薬液の供給が可能となる。
Furthermore, there is no need to consider a drop in the temperature of the chemical solution due to the introduction of the object to be cleaned, and since cleaning can be performed with a small amount of chemical solution, it is possible to constantly supply new chemical solution.

〔実施例〕〔Example〕

以下に本発明を実施例にしたがって、さらに説明するが
、本発明はこの実施例に限定されるものではない。
The present invention will be further explained below with reference to Examples, but the present invention is not limited to these Examples.

実施例1 第11:21は、本発明の洗浄方法による洗浄装置の実
施態様の一例を示す概略断面図である。本実施例におい
ては、洗浄装置1は、紫外線光源2と、洗浄薬液槽3と
を有している。また洗浄薬液槽:3は、薬液供給口6、
オーバーフロー機構4、及び薬液排出ロアを有している
Example 1 No. 11:21 is a schematic sectional view showing an example of an embodiment of a cleaning device according to the cleaning method of the present invention. In this embodiment, the cleaning device 1 includes an ultraviolet light source 2 and a cleaning chemical tank 3. In addition, the cleaning chemical liquid tank: 3 is a chemical liquid supply port 6,
It has an overflow mechanism 4 and a chemical solution discharge lower.

模擬汚染物質としてレジストを塗布した被洗浄物8を、
洗浄薬液tg 3中の薬液に浸漬し、紫外線光源2から
の紫外線を5分間照射して、レジスト除去を行い、図示
していないリンサーで5分間純水リンスを行った。
The object to be cleaned 8 coated with resist as a simulated contaminant,
It was immersed in a cleaning chemical solution Tg 3, irradiated with ultraviolet rays from the ultraviolet light source 2 for 5 minutes to remove the resist, and rinsed with pure water for 5 minutes using a rinser (not shown).

ここで洗浄薬液としては、硫酸及び過酸化水素をH,S
[]、 : ]8[]2: 112D= 3 : 1 
: 1の割合で混合した溶液を用い、20mff/mi
nで供給した。
Here, as cleaning chemicals, sulfuric acid and hydrogen peroxide are used as H, S
[], : ]8[]2: 112D= 3: 1
: Using a solution mixed at a ratio of 1: 20 mff/mi
Supplied at n.

また紫外線光源としては、波長200nm以下の紫外線
透過が可能な大王石英製の保護管を用いた40Wの低圧
水銀ランプ6本を用いた。被洗浄物は水滴濃霧で一様に
漏れ、清浄と判定された。
Further, as the ultraviolet light source, six 40W low-pressure mercury lamps using protective tubes made of Daio quartz and capable of transmitting ultraviolet light having a wavelength of 200 nm or less were used. The object to be cleaned leaked uniformly in a dense mist of water droplets, and was judged to be clean.

)また、他の無機酸を用いて行った結果も同様であった
) Also, the results obtained using other inorganic acids were similar.

実施例2 実施例1と同様の装置を用い、洗浄薬液としてぎ酸及び
過酸化水素HCOOH: H2O2: ]70−1=1
8に混合し、20 mg−[]3/dのオゾンを吹き込
んで溶解させた溶液を用いた他は同様の条件で処理した
。被洗浄物は水滴噴霧法で一様に漏れ、清浄と判定され
た。
Example 2 Using the same apparatus as in Example 1, formic acid and hydrogen peroxide were used as cleaning chemicals HCOOH: H2O2: ]70-1=1
The treatment was carried out under the same conditions except that a solution prepared by mixing 8 and dissolving it by blowing in 20 mg-[]3/d of ozone was used. The object to be cleaned leaked uniformly using the water droplet spray method, and was judged to be clean.

また、他の有機酸を用いて行った結果も同様であった。Moreover, the results obtained using other organic acids were also similar.

実施例3 実施例1と同様の装置を用い、洗浄薬液としてアンモニ
ア及び過酸化水素をNIl、OH: )1202:H2
0=1:1:5を用いた他は同様の条件で処理した。被
洗浄物は水滴噴霧法で一様に漏れ、清浄と判定された。
Example 3 Using the same apparatus as in Example 1, ammonia and hydrogen peroxide were used as cleaning chemicals in NIl, OH: )1202:H2
Processing was carried out under the same conditions except that 0=1:1:5 was used. The object to be cleaned leaked uniformly using the water droplet spray method, and was judged to be clean.

実施例4 実施例1と同様の装置を用い、洗浄薬液濃度をJリン1
%、IIJ23%とした他は同様の条件で処理した。被
洗浄物は水滴噴霧法で一様に漏れ、清浄と判定された。
Example 4 Using the same apparatus as in Example 1, the cleaning chemical concentration was adjusted to J phosphorus 1.
%, IIJ was 23%, but the treatment was carried out under the same conditions. The object to be cleaned leaked uniformly using the water droplet spray method, and was judged to be clean.

比較例1 実施例1と同様の被洗浄物を、40Wの低圧水銀ランプ
6本を用いたUVとオゾン洗浄装置で使用した。
Comparative Example 1 The same object to be cleaned as in Example 1 was used in a UV and ozone cleaning device using six 40W low-pressure mercury lamps.

比較例1では、被洗浄物が水滴噴霧法によって清浄と判
定されるまでに、20分間を要した。
In Comparative Example 1, it took 20 minutes for the object to be cleaned to be determined to be clean by the water droplet spray method.

また、被洗浄物を取り出す際等に、人体等に有害なオゾ
ンガスの漏洩を防止するため、排オゾンガス処理装置を
設ける必要があった。
Furthermore, in order to prevent the leakage of ozone gas harmful to the human body when taking out the object to be cleaned, it is necessary to provide an exhaust ozone gas treatment device.

比較例2 実施例1と同様の被洗浄物を、硫酸及び過酸化水素の高
温混合溶液を用いて1分間処理した。
Comparative Example 2 The same object to be cleaned as in Example 1 was treated with a high temperature mixed solution of sulfuric acid and hydrogen peroxide for 1 minute.

被洗浄物は水滴噴霧法によって清浄と判定された。The object to be cleaned was determined to be clean by the water droplet spray method.

比較例2では、洗浄薬液の加熱装置が必要であり、かつ
酸化性の強い高温薬液は取扱いに厳重な注意が必要であ
る。
In Comparative Example 2, a heating device for the cleaning chemical solution is required, and the highly oxidizing high-temperature chemical solution requires extreme caution in handling.

〔発明の効果〕〔Effect of the invention〕

以上水したように、被洗浄物を、洗浄薬液中に浸漬し、
紫外線を照射することによる本発明の洗浄方法は、容易
に高度に洗浄された被洗浄物を得ることができ、また従
来法に比較して、1) 有機溶媒による洗浄方法と異な
り、使用及び排出が制限されているフロン類、塩素系有
機溶剤等を使用する必要がない。
Immerse the object to be cleaned in the cleaning chemical solution as described above,
The cleaning method of the present invention by irradiating ultraviolet rays can easily obtain a highly cleaned object, and compared to conventional methods, 1) Unlike cleaning methods using organic solvents, it is easy to use and discharge; There is no need to use fluorocarbons, chlorinated organic solvents, etc., which are restricted.

2)UVとオゾン等の乾式洗浄方法に比較して、短時間
の処理が可能である。
2) Compared to dry cleaning methods such as UV and ozone, processing can be performed in a shorter time.

3)高温の洗浄薬液を用いる方法に比較して、薬液の加
熱設備が不要であり、かつ取扱いが容易である。
3) Compared to methods using high-temperature cleaning chemicals, chemical heating equipment is not required and handling is easier.

等の利点がある。There are advantages such as

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の方法に使用する装置の一例を示す概
略断面図である。 ■・・・洗浄装置、2・・・紫外線光源、3・・・薬液
槽、4・・・オーバーフロー機構、5゛・・・被洗浄物
保持機構、6・・・薬液供給口、7・・・排出口、8・
・・被洗浄物、9・・多孔板
FIG. 1 is a schematic sectional view showing an example of an apparatus used in the method of the present invention. ■...Cleaning device, 2...Ultraviolet light source, 3...Chemical solution tank, 4...Overflow mechanism, 5゛...Object holding mechanism, 6...Chemical solution supply port, 7...・Exhaust port, 8・
・Object to be cleaned, 9.・Perforated plate

Claims (1)

【特許請求の範囲】 1、被洗浄物を、酸と過酸化水素及び/又はオゾンとを
含む洗浄液中に浸漬させ、紫外線を照射することを特徴
とする洗浄方法。 2、被洗浄物を、アンモニア又はアミン類と、過酸化水
素及び/又はオゾンとを含む洗浄液中に浸漬させ、紫外
線を照射することを特徴とする洗浄方法。
[Scope of Claims] 1. A cleaning method characterized by immersing an object to be cleaned in a cleaning liquid containing an acid, hydrogen peroxide and/or ozone, and irradiating it with ultraviolet rays. 2. A cleaning method characterized by immersing the object to be cleaned in a cleaning liquid containing ammonia or amines, hydrogen peroxide and/or ozone, and irradiating it with ultraviolet rays.
JP2306294A 1990-11-14 1990-11-14 Cleaning method Expired - Fee Related JPH07114191B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2306294A JPH07114191B2 (en) 1990-11-14 1990-11-14 Cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2306294A JPH07114191B2 (en) 1990-11-14 1990-11-14 Cleaning method

Publications (2)

Publication Number Publication Date
JPH04179225A true JPH04179225A (en) 1992-06-25
JPH07114191B2 JPH07114191B2 (en) 1995-12-06

Family

ID=17955369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2306294A Expired - Fee Related JPH07114191B2 (en) 1990-11-14 1990-11-14 Cleaning method

Country Status (1)

Country Link
JP (1) JPH07114191B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291099A (en) * 1993-03-31 1994-10-18 Sumitomo Sitix Corp Cleaning method of silicon wafer
FR2739041A1 (en) * 1995-09-22 1997-03-28 Ecolab Inc PROCESS FOR CLEANING AND SANITIZING SOLID SURFACES OR INDUSTRIAL FACILITIES
EP1088603A1 (en) * 1999-09-30 2001-04-04 Purex Co.Ltd. Method of removing contamination adhered to surfaces and apparatus used therefor
JP2003171694A (en) * 2001-12-03 2003-06-20 Mejiro Optica:Kk Cleaning composition and cleaning method
CN100413606C (en) * 1996-03-27 2008-08-27 阿尔卑斯电气株式会社 Cleaning Method
JP2009088253A (en) * 2007-09-28 2009-04-23 Toshiba Corp Method and system for manufacturing microstructure
WO2010140581A1 (en) * 2009-06-03 2010-12-09 倉敷紡績株式会社 Method for supplying hydroxyl radical-containing water and apparatus for supplying hydroxyl radical-containing water
JP2011075449A (en) * 2009-09-30 2011-04-14 Kurabo Ind Ltd Hydroxyl radical-containing water supply system
CN102069083A (en) * 2010-12-03 2011-05-25 河南师范大学 Method for cleaning microporous aeration disc/pipe
JP2014130153A (en) * 2014-02-14 2014-07-10 Kurabo Ind Ltd Hydroxyl radical-containing water supply apparatus
CN105195487A (en) * 2015-08-04 2015-12-30 航天科工惯性技术有限公司 Quartz glass cleaning method
EP3189904A1 (en) 2016-01-07 2017-07-12 Ebara Corporation Cleaning apparatus
WO2017170595A1 (en) * 2016-03-28 2017-10-05 株式会社トクヤマ Cleaning method, cleaning liquid, and cleaning device
JP2018029129A (en) * 2016-08-18 2018-02-22 株式会社トクヤマ Cleaning apparatus
KR20210124391A (en) 2019-03-22 2021-10-14 가부시키가이샤 스크린 홀딩스 Substrate processing method

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JPS61220434A (en) * 1985-03-27 1986-09-30 Toshiba Corp Wafer washing apparatus
JPS61164030U (en) * 1985-03-28 1986-10-11

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212063A (en) * 1975-07-15 1977-01-29 Matsushita Electric Works Ltd Hair curling apparatus
JPS5434751A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Washing method for silicon wafer
JPS60143884A (en) * 1983-12-28 1985-07-30 富士通株式会社 Washing method
JPS60153982A (en) * 1984-01-23 1985-08-13 株式会社東芝 Surface washing method
JPS61220434A (en) * 1985-03-27 1986-09-30 Toshiba Corp Wafer washing apparatus
JPS61164030U (en) * 1985-03-28 1986-10-11

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291099A (en) * 1993-03-31 1994-10-18 Sumitomo Sitix Corp Cleaning method of silicon wafer
FR2739041A1 (en) * 1995-09-22 1997-03-28 Ecolab Inc PROCESS FOR CLEANING AND SANITIZING SOLID SURFACES OR INDUSTRIAL FACILITIES
NL1004029C2 (en) * 1995-09-22 1998-12-29 Ecolab Inc Potentized aqueous ozone cleaning and sanitizing composition to remove contaminating surface contamination.
CN100413606C (en) * 1996-03-27 2008-08-27 阿尔卑斯电气株式会社 Cleaning Method
EP1088603A1 (en) * 1999-09-30 2001-04-04 Purex Co.Ltd. Method of removing contamination adhered to surfaces and apparatus used therefor
JP2003171694A (en) * 2001-12-03 2003-06-20 Mejiro Optica:Kk Cleaning composition and cleaning method
JP2009088253A (en) * 2007-09-28 2009-04-23 Toshiba Corp Method and system for manufacturing microstructure
CN102459092A (en) * 2009-06-03 2012-05-16 仓敷纺织株式会社 Method and apparatus for supplying water containing hydroxyl radical
WO2010140581A1 (en) * 2009-06-03 2010-12-09 倉敷紡績株式会社 Method for supplying hydroxyl radical-containing water and apparatus for supplying hydroxyl radical-containing water
US8715420B2 (en) 2009-06-03 2014-05-06 Kurashiki Boseki Kabushiki Kaisha Method for supplying hydroxyl radical-containing water and apparatus for supplying hydroxyl radical-containing water
JP2011075449A (en) * 2009-09-30 2011-04-14 Kurabo Ind Ltd Hydroxyl radical-containing water supply system
CN102069083A (en) * 2010-12-03 2011-05-25 河南师范大学 Method for cleaning microporous aeration disc/pipe
JP2014130153A (en) * 2014-02-14 2014-07-10 Kurabo Ind Ltd Hydroxyl radical-containing water supply apparatus
CN105195487A (en) * 2015-08-04 2015-12-30 航天科工惯性技术有限公司 Quartz glass cleaning method
EP3189904A1 (en) 2016-01-07 2017-07-12 Ebara Corporation Cleaning apparatus
WO2017170595A1 (en) * 2016-03-28 2017-10-05 株式会社トクヤマ Cleaning method, cleaning liquid, and cleaning device
JP2018029129A (en) * 2016-08-18 2018-02-22 株式会社トクヤマ Cleaning apparatus
KR20210124391A (en) 2019-03-22 2021-10-14 가부시키가이샤 스크린 홀딩스 Substrate processing method

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