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JPS6484669A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6484669A
JPS6484669A JP24115987A JP24115987A JPS6484669A JP S6484669 A JPS6484669 A JP S6484669A JP 24115987 A JP24115987 A JP 24115987A JP 24115987 A JP24115987 A JP 24115987A JP S6484669 A JPS6484669 A JP S6484669A
Authority
JP
Japan
Prior art keywords
insulating film
gate electrode
gate
electrode
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24115987A
Other languages
Japanese (ja)
Inventor
Shunichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP24115987A priority Critical patent/JPS6484669A/en
Publication of JPS6484669A publication Critical patent/JPS6484669A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To decrease defective pixels in number and improve a transistor of this design in yield by a method wherein a gate electrode is so formed as to smaller than a gate insulating film in width and an insulating region is formed being positioned at the side face of the gate electrode and under the insulating film. CONSTITUTION:An gate electrode 20, a gate insulating film 22, and a semiconductor film 23 are successively laminated on a transparent insulating substrate 1, the gate electrode 20 is formed so as to be smaller than the gate insulating film 22 in width, and an insulating region 7 filled with an insulating material is formed on the side face of the gate electrode and under the gate insulating film 22. And, a pair of contact layers 24 formed of n<+> amorphous silicon are formed apart from each other with a specified space between them and facing each other. A drain electrode 25a is formed on a contact layer 24 formed inside and a source electrode 29a is built covering the contact layer 24 built on the end.
JP24115987A 1987-09-26 1987-09-26 Thin film transistor Pending JPS6484669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24115987A JPS6484669A (en) 1987-09-26 1987-09-26 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24115987A JPS6484669A (en) 1987-09-26 1987-09-26 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6484669A true JPS6484669A (en) 1989-03-29

Family

ID=17070138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24115987A Pending JPS6484669A (en) 1987-09-26 1987-09-26 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6484669A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
JP2009231828A (en) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
JP2009230128A (en) * 2008-02-27 2009-10-08 Semiconductor Energy Lab Co Ltd Liquid crystal display device and manufacturing method thereof, and electronic apparatus
JP2009239272A (en) * 2008-03-05 2009-10-15 Semiconductor Energy Lab Co Ltd Method for manufacturing el display device
JP2009239276A (en) * 2008-03-07 2009-10-15 Semiconductor Energy Lab Co Ltd Thin-film transistor and manufacturing method thereof, and display device and manufacturing method thereof
JP2009246352A (en) * 2008-03-11 2009-10-22 Semiconductor Energy Lab Co Ltd Method for manufacturing thin film transistor, and method for manufacturing display device
JP2010028103A (en) * 2008-06-17 2010-02-04 Semiconductor Energy Lab Co Ltd Thin film transistor, method of manufacturing the same, display device, and method of manufacturing the device
JP2010230950A (en) * 2009-03-27 2010-10-14 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
JP2010251733A (en) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd Methods for manufacturing thin film transistor and display device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
WO2016021472A1 (en) * 2014-08-05 2016-02-11 シャープ株式会社 Method for producing imaging panel, imaging panel, and x-ray imaging device
WO2016021471A1 (en) * 2014-08-05 2016-02-11 シャープ株式会社 Imaging panel, method for producing imaging panel, and x-ray imaging device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225869A (en) * 1985-03-29 1986-10-07 Seiko Instr & Electronics Ltd Thin film transistor device and manufacture thereof
JPS6269680A (en) * 1985-09-24 1987-03-30 Seiko Instr & Electronics Ltd Manufacture of thin film transistor
JPS63221680A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of thin-film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225869A (en) * 1985-03-29 1986-10-07 Seiko Instr & Electronics Ltd Thin film transistor device and manufacture thereof
JPS6269680A (en) * 1985-09-24 1987-03-30 Seiko Instr & Electronics Ltd Manufacture of thin film transistor
JPS63221680A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of thin-film transistor

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449129B (en) * 2007-12-03 2014-08-11 Semiconductor Energy Lab Manufacturing method of thin film transistor and manufacturing method of display device
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
JP2009158941A (en) * 2007-12-03 2009-07-16 Semiconductor Energy Lab Co Ltd Manufacturing method of thin film transistor and manufacturing method of display device
US7993991B2 (en) 2007-12-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8901561B2 (en) 2008-02-26 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP2009231828A (en) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
JP2014160849A (en) * 2008-02-27 2014-09-04 Semiconductor Energy Lab Co Ltd Thin film transistor
JP2009230128A (en) * 2008-02-27 2009-10-08 Semiconductor Energy Lab Co Ltd Liquid crystal display device and manufacturing method thereof, and electronic apparatus
US8049221B2 (en) 2008-02-27 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8361820B2 (en) 2008-02-27 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal display device
JP2022058527A (en) * 2008-03-05 2022-04-12 株式会社半導体エネルギー研究所 Manufacturing method for el display device
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
JP2016048378A (en) * 2008-03-05 2016-04-07 株式会社半導体エネルギー研究所 Display device
JP2009239272A (en) * 2008-03-05 2009-10-15 Semiconductor Energy Lab Co Ltd Method for manufacturing el display device
JP2016212435A (en) * 2008-03-05 2016-12-15 株式会社半導体エネルギー研究所 Display device, display module, and electronic appliance
TWI486096B (en) * 2008-03-05 2015-05-21 Semiconductor Energy Lab Method for manufacturing el display device
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
JP2009239276A (en) * 2008-03-07 2009-10-15 Semiconductor Energy Lab Co Ltd Thin-film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US8278662B2 (en) 2008-03-07 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
JP2009246352A (en) * 2008-03-11 2009-10-22 Semiconductor Energy Lab Co Ltd Method for manufacturing thin film transistor, and method for manufacturing display device
JP2010028103A (en) * 2008-06-17 2010-02-04 Semiconductor Energy Lab Co Ltd Thin film transistor, method of manufacturing the same, display device, and method of manufacturing the device
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8709836B2 (en) 2009-02-16 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8441051B2 (en) 2009-03-11 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010251733A (en) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd Methods for manufacturing thin film transistor and display device
US8372700B2 (en) 2009-03-26 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
JP2010230950A (en) * 2009-03-27 2010-10-14 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
WO2016021472A1 (en) * 2014-08-05 2016-02-11 シャープ株式会社 Method for producing imaging panel, imaging panel, and x-ray imaging device
WO2016021471A1 (en) * 2014-08-05 2016-02-11 シャープ株式会社 Imaging panel, method for producing imaging panel, and x-ray imaging device

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