JPS6468968A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6468968A JPS6468968A JP62225721A JP22572187A JPS6468968A JP S6468968 A JPS6468968 A JP S6468968A JP 62225721 A JP62225721 A JP 62225721A JP 22572187 A JP22572187 A JP 22572187A JP S6468968 A JPS6468968 A JP S6468968A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- drain electrode
- source electrode
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To eliminate the dispersion in the floating capacity by a method wherein a semiconductor layer is covered with a gate insulating film while a gate electrode is provided to intersect with a source electrode and a drain electrode in the long direction. CONSTITUTION:A source electrode 103 and a drain electrode 102 are provided in parallel with each other at the distance of the channel length of a thin film transistor on an insulating substrate 101. A semiconductor layer 104 is formed in contact with the upper side of the source electrode 103 and the drain electrode 102 to connect these two electrodes 103, 102 which are covered with a gate insulating film 105. Furthermore, the semiconductor layer 104 is covered with a gate electrode 106 intersecting with the source electrode 103 and the drain electrode 102 in the long direction through the intermediary of the gate insulating film 105. Thus, even if the gate electrode 106 is pattern-slipped in the arrow 505 or 506 directions, the overlapped space of the source electrode 103 and the drain electrode 102 with the gate electrode 106 can be kept constant. Consequently, the pattern-slip of the gate electrode 106 do not have any effect on the stray capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62225721A JP2516030B2 (en) | 1987-09-09 | 1987-09-09 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62225721A JP2516030B2 (en) | 1987-09-09 | 1987-09-09 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6468968A true JPS6468968A (en) | 1989-03-15 |
| JP2516030B2 JP2516030B2 (en) | 1996-07-10 |
Family
ID=16833774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62225721A Expired - Lifetime JP2516030B2 (en) | 1987-09-09 | 1987-09-09 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2516030B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049952A (en) * | 1989-12-30 | 1991-09-17 | Samsung Electron Devices Co., Ltd. | Thin film transistor for use in a flat plate display |
| JP2011175032A (en) * | 2010-02-23 | 2011-09-08 | Hitachi Displays Ltd | Display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001051293A (en) | 1999-07-29 | 2001-02-23 | Internatl Business Mach Corp <Ibm> | Thin-film transistor, liquid crystal display panel, manufacturing method of the thin-film transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61108171A (en) * | 1984-11-01 | 1986-05-26 | Toshiba Corp | Thin film field effect transistor |
| JPS62120080A (en) * | 1985-11-20 | 1987-06-01 | Sanyo Electric Co Ltd | Display device |
| JPS62132367A (en) * | 1985-12-04 | 1987-06-15 | Nec Corp | Thin film field effect transistor |
-
1987
- 1987-09-09 JP JP62225721A patent/JP2516030B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61108171A (en) * | 1984-11-01 | 1986-05-26 | Toshiba Corp | Thin film field effect transistor |
| JPS62120080A (en) * | 1985-11-20 | 1987-06-01 | Sanyo Electric Co Ltd | Display device |
| JPS62132367A (en) * | 1985-12-04 | 1987-06-15 | Nec Corp | Thin film field effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049952A (en) * | 1989-12-30 | 1991-09-17 | Samsung Electron Devices Co., Ltd. | Thin film transistor for use in a flat plate display |
| JP2011175032A (en) * | 2010-02-23 | 2011-09-08 | Hitachi Displays Ltd | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2516030B2 (en) | 1996-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080430 Year of fee payment: 12 |