JPS6467971A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6467971A JPS6467971A JP22577087A JP22577087A JPS6467971A JP S6467971 A JPS6467971 A JP S6467971A JP 22577087 A JP22577087 A JP 22577087A JP 22577087 A JP22577087 A JP 22577087A JP S6467971 A JPS6467971 A JP S6467971A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- recesses
- layer
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To flatten the surface of a thin film transistor, and to eliminate a step on an active layer formed thereon by forming a recess on an insulating substrate, and burying source and drain electrodes and an ohmic contact layer therein. CONSTITUTION:Recesses 5, 6 for burying source and drain electrodes S, D are formed on an insulating substrate 1. The electrodes S, D and ohmic contact layers 2s, 2d are respectively laminated and formed in the recesses 5, 6. Thus, the surfaces of the layers 2s, 2d and the substrate 1 are flattened, and an active layer 2, a gate insulating film 4 and a gate electrode G are sequentially laminated in this order thereon. No step is formed not only on the layer 3 but on the film 4 and the electrode G. Thus, there is no possibility of cracking or stepping the a-Si film 3, and a thin film transistor having stable characteristics is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22577087A JPS6467971A (en) | 1987-09-08 | 1987-09-08 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22577087A JPS6467971A (en) | 1987-09-08 | 1987-09-08 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6467971A true JPS6467971A (en) | 1989-03-14 |
Family
ID=16834525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22577087A Pending JPS6467971A (en) | 1987-09-08 | 1987-09-08 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6467971A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0449625A (en) * | 1990-06-19 | 1992-02-19 | Nec Corp | Thin-film transistor and its manufacturing method |
| JP2006510210A (en) * | 2002-12-14 | 2006-03-23 | プラスティック ロジック リミテッド | Electronic equipment |
-
1987
- 1987-09-08 JP JP22577087A patent/JPS6467971A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0449625A (en) * | 1990-06-19 | 1992-02-19 | Nec Corp | Thin-film transistor and its manufacturing method |
| JP2006510210A (en) * | 2002-12-14 | 2006-03-23 | プラスティック ロジック リミテッド | Electronic equipment |
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