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JPS6472991A - Production of single crystal of compound semiconductor - Google Patents

Production of single crystal of compound semiconductor

Info

Publication number
JPS6472991A
JPS6472991A JP22844387A JP22844387A JPS6472991A JP S6472991 A JPS6472991 A JP S6472991A JP 22844387 A JP22844387 A JP 22844387A JP 22844387 A JP22844387 A JP 22844387A JP S6472991 A JPS6472991 A JP S6472991A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
production
compound semiconductor
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22844387A
Other languages
Japanese (ja)
Inventor
Atsushi Shimizu
Kazuhisa Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP22844387A priority Critical patent/JPS6472991A/en
Publication of JPS6472991A publication Critical patent/JPS6472991A/en
Pending legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain the titled crystal in an increased yield by regulating the output of a subsidiary heating element positioned at the inside of a crucible so as to control the shape of a pulled crystal. CONSTITUTION:Molten starting material 3 and B2O3 4 are put in a crucible 1 supported by a graphite vessel 2, they are heated with a main heater 5 and a single crystal 7 is pulled up with a seed crystal 6 while controlling the shape of the pulled crystal 7 with a subsidiary heating element 8.
JP22844387A 1987-09-14 1987-09-14 Production of single crystal of compound semiconductor Pending JPS6472991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22844387A JPS6472991A (en) 1987-09-14 1987-09-14 Production of single crystal of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22844387A JPS6472991A (en) 1987-09-14 1987-09-14 Production of single crystal of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS6472991A true JPS6472991A (en) 1989-03-17

Family

ID=16876575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22844387A Pending JPS6472991A (en) 1987-09-14 1987-09-14 Production of single crystal of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS6472991A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139890A (en) * 1978-04-24 1979-10-30 Hitachi Ltd Semiconductor single crystal producing device
JPS5930795A (en) * 1982-08-10 1984-02-18 Sumitomo Electric Ind Ltd Apparatus for pulling up single crystal
JPS62171984A (en) * 1986-01-24 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> Apparatus for production of crystal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139890A (en) * 1978-04-24 1979-10-30 Hitachi Ltd Semiconductor single crystal producing device
JPS5930795A (en) * 1982-08-10 1984-02-18 Sumitomo Electric Ind Ltd Apparatus for pulling up single crystal
JPS62171984A (en) * 1986-01-24 1987-07-28 Nippon Telegr & Teleph Corp <Ntt> Apparatus for production of crystal

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