[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS645012A - Vapor growth equipment - Google Patents

Vapor growth equipment

Info

Publication number
JPS645012A
JPS645012A JP16036587A JP16036587A JPS645012A JP S645012 A JPS645012 A JP S645012A JP 16036587 A JP16036587 A JP 16036587A JP 16036587 A JP16036587 A JP 16036587A JP S645012 A JPS645012 A JP S645012A
Authority
JP
Japan
Prior art keywords
susceptor
central part
thermal conductivity
casing
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16036587A
Other languages
Japanese (ja)
Inventor
Satoru Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16036587A priority Critical patent/JPS645012A/en
Publication of JPS645012A publication Critical patent/JPS645012A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make the temperature distribution of a susceptor surface uniform, and grow stably a crystal, by making the thickness of the susceptor mounted on a casing surface gradually thin toward the central part, in order that the thermal conductivity may become small toward the central part. CONSTITUTION:In a casing made of quartz, the following are sealed: a heat- insulating material 4 to prevent the downward heat dissipation, a resistor heating element 1 made of tantalum, and electric power supplying terminals 2 to supply electric power to the resistor heating element 1. On the upper sur face of the casing 3, a susceptor 5 is mounted whose thickness becomes thin from the peripheral part toward the central part, and thereon a substrate 6 to be heated is mounted. As the shape of the susceptor 5 becomes thin in thick ness toward the central part, its thermal conductivity is small, so that the tem perature distribution for the substrate 6 to be heated becomes uniform. The same effect can be obtained by a method wherein the thermal conductivity is made small from the peripheral part toward the central part, by making the material of the susceptor 5 composite.
JP16036587A 1987-06-26 1987-06-26 Vapor growth equipment Pending JPS645012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16036587A JPS645012A (en) 1987-06-26 1987-06-26 Vapor growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16036587A JPS645012A (en) 1987-06-26 1987-06-26 Vapor growth equipment

Publications (1)

Publication Number Publication Date
JPS645012A true JPS645012A (en) 1989-01-10

Family

ID=15713399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16036587A Pending JPS645012A (en) 1987-06-26 1987-06-26 Vapor growth equipment

Country Status (1)

Country Link
JP (1) JPS645012A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0855735A2 (en) * 1997-01-24 1998-07-29 Applied Materials, Inc. A high temperature, high flow rate chemical vapor deposition apparatus and related methods
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6616767B2 (en) 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0855735A2 (en) * 1997-01-24 1998-07-29 Applied Materials, Inc. A high temperature, high flow rate chemical vapor deposition apparatus and related methods
EP0855735A3 (en) * 1997-01-24 2001-10-17 Applied Materials, Inc. A high temperature, high flow rate chemical vapor deposition apparatus and related methods
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6616767B2 (en) 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability

Similar Documents

Publication Publication Date Title
US4763099B1 (en)
ES253853U (en) Heating element for a glass ceramic cooking unit
JPS645012A (en) Vapor growth equipment
ES453915A1 (en) Process and apparatus for controlled and gentle heating or cooling of viscous solutions or melts of thermoplastics
JPS5737848A (en) Heating apparatus for wafer
GB1510702A (en) Electric furnaces
JPS5654033A (en) Heater for substrate and chemical evaporation using said heater
JPS5793702A (en) Quartz oscillating circuit
JPS5275177A (en) Vapor growth device
JPS57167137A (en) Formation for thin film
JPH0545056B2 (en)
JPS551768A (en) Surface acoustic wave element
JPS55121649A (en) Cvd device
JPS57149727A (en) Heating base of a vapor growth semiconductor
JPS57106598A (en) Semiconductor crystal growing device
JPS5521277A (en) Thermal head
JPS5860532A (en) Susceptor
CN112609160A (en) Evaporation source heating structure of CIGS co-evaporation method
JPS6417315A (en) Superconducting device
JPS6487591A (en) Production of crucible for pulling up semiconductor
JPS57152175A (en) Semiconductor magneto-electric effect device
JPS5743826A (en) Thermal deposition of synthetic resin film
JPS54124968A (en) Manufacture of semiconductor element
JPS57100718A (en) Manufacture of crystalline substrate
JPS56115522A (en) Vapor growth device