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JPS5711897A - Method of pulling up single crystal and device therefor - Google Patents

Method of pulling up single crystal and device therefor

Info

Publication number
JPS5711897A
JPS5711897A JP8817480A JP8817480A JPS5711897A JP S5711897 A JPS5711897 A JP S5711897A JP 8817480 A JP8817480 A JP 8817480A JP 8817480 A JP8817480 A JP 8817480A JP S5711897 A JPS5711897 A JP S5711897A
Authority
JP
Japan
Prior art keywords
heater
crucible
heaters
single crystal
temperature distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8817480A
Other languages
Japanese (ja)
Other versions
JPS6234717B2 (en
Inventor
Akihisa Kawasaki
Masao Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP8817480A priority Critical patent/JPS5711897A/en
Publication of JPS5711897A publication Critical patent/JPS5711897A/en
Publication of JPS6234717B2 publication Critical patent/JPS6234717B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: A heater of double structure is set around the outer surface of the crucible and the heater is vertically moved to control the neighborhood of the crucible to the prescribed temperature distribution, thus growing high-quality single crystals.
CONSTITUTION: A resistance heater of two-step and double structure is set concentrically around the outer surface of the crucible 43 and the outside heater is extended over the inside heater to form a cylindrical heater consisting of the lower heater 44B and the upper heater 44A. Both heaters 44A and 44B are provided with plate electrodes on the bottoms and the electrodes are controlled to move both heaters 44A and 44B vertically. Thus, the position of the crusible 43 relating to both heaters 44A and 44B is changed and simultaneously, the power input to both heaters are controlled independently to control the temperature distribution near the crucible 43 and the single crystal is pulled up.
COPYRIGHT: (C)1982,JPO&Japio
JP8817480A 1980-06-27 1980-06-27 Method of pulling up single crystal and device therefor Granted JPS5711897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8817480A JPS5711897A (en) 1980-06-27 1980-06-27 Method of pulling up single crystal and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8817480A JPS5711897A (en) 1980-06-27 1980-06-27 Method of pulling up single crystal and device therefor

Publications (2)

Publication Number Publication Date
JPS5711897A true JPS5711897A (en) 1982-01-21
JPS6234717B2 JPS6234717B2 (en) 1987-07-28

Family

ID=13935539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8817480A Granted JPS5711897A (en) 1980-06-27 1980-06-27 Method of pulling up single crystal and device therefor

Country Status (1)

Country Link
JP (1) JPS5711897A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108259A2 (en) * 1982-10-08 1984-05-16 Sumitomo Electric Industries Limited Method for controlling vertically arranged heaters in a crystal pulling device
JPS59137399A (en) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus of growing low-dislocation density single crystal
JPS60221391A (en) * 1984-04-18 1985-11-06 Toshiba Corp Device for growing compound semiconductor single crystal
JPS6144794A (en) * 1984-08-08 1986-03-04 Hitachi Ltd Heating element
US4645560A (en) * 1983-08-26 1987-02-24 Sumito Electric Industries, Ltd. Liquid encapsulation method for growing single semiconductor crystals
US4863554A (en) * 1983-08-23 1989-09-05 Sumitomo Electric Industries, Ltd. Process for pulling a single crystal
AT400848B (en) * 1984-08-24 1996-03-25 Sony Corp DEVICE FOR BREEDING A SINGLE CRYSTAL

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108259A2 (en) * 1982-10-08 1984-05-16 Sumitomo Electric Industries Limited Method for controlling vertically arranged heaters in a crystal pulling device
JPS59137399A (en) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus of growing low-dislocation density single crystal
US4863554A (en) * 1983-08-23 1989-09-05 Sumitomo Electric Industries, Ltd. Process for pulling a single crystal
US4645560A (en) * 1983-08-26 1987-02-24 Sumito Electric Industries, Ltd. Liquid encapsulation method for growing single semiconductor crystals
JPS60221391A (en) * 1984-04-18 1985-11-06 Toshiba Corp Device for growing compound semiconductor single crystal
JPS6144794A (en) * 1984-08-08 1986-03-04 Hitachi Ltd Heating element
AT400848B (en) * 1984-08-24 1996-03-25 Sony Corp DEVICE FOR BREEDING A SINGLE CRYSTAL

Also Published As

Publication number Publication date
JPS6234717B2 (en) 1987-07-28

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