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JPS6424422A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS6424422A
JPS6424422A JP18050387A JP18050387A JPS6424422A JP S6424422 A JPS6424422 A JP S6424422A JP 18050387 A JP18050387 A JP 18050387A JP 18050387 A JP18050387 A JP 18050387A JP S6424422 A JPS6424422 A JP S6424422A
Authority
JP
Japan
Prior art keywords
thin film
organic thin
ion beam
focused ion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18050387A
Other languages
Japanese (ja)
Inventor
Hideji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP18050387A priority Critical patent/JPS6424422A/en
Publication of JPS6424422A publication Critical patent/JPS6424422A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To facilitate forming a fine pattern in which fine trenches narrower than the diameter of a focused ion beam are provided extremely closely to each other by applying the focused ion beam. CONSTITUTION:An organic thin film 2 such as a photoresist film made of PMMA or novolack resin is applied to the surface of a substrate 1 made of semiconductor or the like. The thickness of the organic thin film 2 is approximately 1mum. Then a focused ion beam 3 with a diameter about 0.2mum is applied to the different positions successively and, in each application region, its center region is developed on the spot to form a trench 4. The FIB is composed of gallium ions. The width of the trench 4 becomes about 0.067mum. In this process, the respective application regions do not overlap each other and are separated from each other by about 0.067mum on the surface of the organic thin film 2. Further, the circumferential region 7 of each FIB application region is doped with gallium ions. After that, the organic thin film 2 is exposed to an oxygen plasma atmosphere.
JP18050387A 1987-07-20 1987-07-20 Formation of fine pattern Pending JPS6424422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18050387A JPS6424422A (en) 1987-07-20 1987-07-20 Formation of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18050387A JPS6424422A (en) 1987-07-20 1987-07-20 Formation of fine pattern

Publications (1)

Publication Number Publication Date
JPS6424422A true JPS6424422A (en) 1989-01-26

Family

ID=16084381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18050387A Pending JPS6424422A (en) 1987-07-20 1987-07-20 Formation of fine pattern

Country Status (1)

Country Link
JP (1) JPS6424422A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998006130A1 (en) * 1996-08-08 1998-02-12 The Government Of The United States Of America, Represented By The Secretary Of The Navy Fully self-aligned high speed low power mosfet fabrication
KR20010063725A (en) * 1999-12-24 2001-07-09 박종섭 A method of controlling a width of photoresist pattern for manufacturing a semiconductor device
US8273811B2 (en) 2005-03-02 2012-09-25 Panasonic Corporation Coating material composite and coated article

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998006130A1 (en) * 1996-08-08 1998-02-12 The Government Of The United States Of America, Represented By The Secretary Of The Navy Fully self-aligned high speed low power mosfet fabrication
KR20010063725A (en) * 1999-12-24 2001-07-09 박종섭 A method of controlling a width of photoresist pattern for manufacturing a semiconductor device
US8273811B2 (en) 2005-03-02 2012-09-25 Panasonic Corporation Coating material composite and coated article

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