JPS5710931A - Patterning method for thin-film - Google Patents
Patterning method for thin-filmInfo
- Publication number
- JPS5710931A JPS5710931A JP8617180A JP8617180A JPS5710931A JP S5710931 A JPS5710931 A JP S5710931A JP 8617180 A JP8617180 A JP 8617180A JP 8617180 A JP8617180 A JP 8617180A JP S5710931 A JPS5710931 A JP S5710931A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- organic matter
- sem
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To conduct beam pattern by means of a simple method by a method wherein electron beams are irradiated onto a substrate, the surface thereof has the thin-film, in high vacuum in which there is organic matter, the surface is patterned while the organic matter is baked on the thin-film, and the substrate and the thin- film are etched. CONSTITUTION:An Al evaporating film is formed on the surface of a wafer 1, electron beam exposure is conducted by means of a scanning type electron microscope (SEM), patterns 3, 4 are made up and the wafer and the film are wet-etched. There is the organic matter such as oil in a diffusion pump and silicon grease in the SEM, but these are baked onto the Al film in the high vacuum of 10<-5> Torr. Accordingly, the thin-film can be patterned by means of electron beams in high accuracy through the simple method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8617180A JPS5710931A (en) | 1980-06-25 | 1980-06-25 | Patterning method for thin-film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8617180A JPS5710931A (en) | 1980-06-25 | 1980-06-25 | Patterning method for thin-film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5710931A true JPS5710931A (en) | 1982-01-20 |
Family
ID=13879302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8617180A Pending JPS5710931A (en) | 1980-06-25 | 1980-06-25 | Patterning method for thin-film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710931A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010085165A (en) * | 2000-02-25 | 2001-09-07 | 엄일호 | Semiconductor Circuit Pattern Inspection Method |
-
1980
- 1980-06-25 JP JP8617180A patent/JPS5710931A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010085165A (en) * | 2000-02-25 | 2001-09-07 | 엄일호 | Semiconductor Circuit Pattern Inspection Method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0020776A4 (en) | Method of forming patterns. | |
JPS5620165A (en) | Formation of pattern | |
JPS5588352A (en) | Manufacture of semiconductor device | |
CN105576498B (en) | A kind of preparation method and GaAs base lasers of fillet ridged GaAs base lasers | |
US4101782A (en) | Process for making patterns in resist and for making ion absorption masks useful therewith | |
JPS5710931A (en) | Patterning method for thin-film | |
JPS52119172A (en) | Forming method of fine pattern | |
JPS63133629A (en) | Manufacture of integrated circuit device | |
JPS5797626A (en) | Manufacture of semiconductor device | |
JPS5534430A (en) | Positioning method in electron beam exposure | |
JPS57198632A (en) | Fine pattern formation | |
JPS5496363A (en) | Electrode forming method for semiconductor device | |
JPS5694741A (en) | Positioning mark for electronic beam exposure | |
JPS6424422A (en) | Formation of fine pattern | |
JPS5710928A (en) | Manufacture of semiconductor element | |
JPS55158635A (en) | Mask | |
JPS5376757A (en) | Photoetching method | |
JPS56107241A (en) | Dry etching method | |
JPS5649525A (en) | Formation of thin film pattern | |
JPS5591126A (en) | Production of semiconductor device | |
JPS53113730A (en) | Metallic pattern forming method | |
JPS57180176A (en) | Manufacturing method for semiconductor device | |
JPS5748731A (en) | Manufacture of mask | |
JPS54162460A (en) | Electrode forming method | |
JPS52120770A (en) | Thin film formation method |