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JPS5710931A - Patterning method for thin-film - Google Patents

Patterning method for thin-film

Info

Publication number
JPS5710931A
JPS5710931A JP8617180A JP8617180A JPS5710931A JP S5710931 A JPS5710931 A JP S5710931A JP 8617180 A JP8617180 A JP 8617180A JP 8617180 A JP8617180 A JP 8617180A JP S5710931 A JPS5710931 A JP S5710931A
Authority
JP
Japan
Prior art keywords
film
thin
organic matter
sem
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8617180A
Other languages
Japanese (ja)
Inventor
Toru Takeuchi
Yasuhisa Sato
Chiaki Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8617180A priority Critical patent/JPS5710931A/en
Publication of JPS5710931A publication Critical patent/JPS5710931A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To conduct beam pattern by means of a simple method by a method wherein electron beams are irradiated onto a substrate, the surface thereof has the thin-film, in high vacuum in which there is organic matter, the surface is patterned while the organic matter is baked on the thin-film, and the substrate and the thin- film are etched. CONSTITUTION:An Al evaporating film is formed on the surface of a wafer 1, electron beam exposure is conducted by means of a scanning type electron microscope (SEM), patterns 3, 4 are made up and the wafer and the film are wet-etched. There is the organic matter such as oil in a diffusion pump and silicon grease in the SEM, but these are baked onto the Al film in the high vacuum of 10<-5> Torr. Accordingly, the thin-film can be patterned by means of electron beams in high accuracy through the simple method.
JP8617180A 1980-06-25 1980-06-25 Patterning method for thin-film Pending JPS5710931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8617180A JPS5710931A (en) 1980-06-25 1980-06-25 Patterning method for thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8617180A JPS5710931A (en) 1980-06-25 1980-06-25 Patterning method for thin-film

Publications (1)

Publication Number Publication Date
JPS5710931A true JPS5710931A (en) 1982-01-20

Family

ID=13879302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8617180A Pending JPS5710931A (en) 1980-06-25 1980-06-25 Patterning method for thin-film

Country Status (1)

Country Link
JP (1) JPS5710931A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085165A (en) * 2000-02-25 2001-09-07 엄일호 Semiconductor Circuit Pattern Inspection Method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085165A (en) * 2000-02-25 2001-09-07 엄일호 Semiconductor Circuit Pattern Inspection Method

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