JPH0211165U - - Google Patents
Info
- Publication number
- JPH0211165U JPH0211165U JP9013088U JP9013088U JPH0211165U JP H0211165 U JPH0211165 U JP H0211165U JP 9013088 U JP9013088 U JP 9013088U JP 9013088 U JP9013088 U JP 9013088U JP H0211165 U JPH0211165 U JP H0211165U
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- single crystal
- boat
- melt
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の化合物半導体単結晶製造装置
の一実施例を示すボートの平面図、第２図は第１
図のＢ―Ｂ′線断面図、第３図は第１図のボート
を用いてＧａＡｓ単結晶を製造する場合の反応容
器断面図、第４図は従来のボートの平面図、第５
図は第４図のＡ―Ａ′線断面図、第６図は第４図
に示すボート形状が異なる場合のＡ―Ａ′線断面
図、第７図及び第８図は断面形状が夫々第５図及
び第６図に示すようなボートから得られた単結晶
より円形ウエハを切削する場合の切削面を示す。
１：ボート、２：反応容器、３：Ｇａ、４：Ａ
ｓ、５：種結晶、６：スリツト。
FIG. 1 is a plan view of a boat showing an embodiment of the compound semiconductor single crystal manufacturing apparatus of the present invention, and FIG.
3 is a cross-sectional view of a reaction vessel when producing GaAs single crystal using the boat shown in FIG. 1, FIG. 4 is a plan view of a conventional boat, and FIG.
The figure is a sectional view taken along the line A-A' in Fig. 4, Fig. 6 is a sectional view taken along the line A-A' when the boat shape shown in Fig. 4 is different, and Figs. This figure shows a cutting surface when a circular wafer is cut from a single crystal obtained from a boat as shown in FIGS. 5 and 6. 1: boat, 2: reaction vessel, 3: Ga, 4: A
s, 5: seed crystal, 6: slit.
Claims (1)
て融液とし、該融液に他方の構成元素の蒸気を接
触させて反応を生じさせ前記化合物半導体の単結
晶を育成する化合物半導体単結晶製造装置におい
て、前記ボートは、その長手方向と直角方向の断
面が大部分円形であることを特徴とする化合物半
導体単結晶製造装置。 A compound semiconductor single crystal production device for producing a compound semiconductor single crystal by placing one of the constituent elements of a compound semiconductor in a boat to form a melt, and bringing the vapor of the other constituent element into contact with the melt to cause a reaction and grow a single crystal of the compound semiconductor. A compound semiconductor single crystal manufacturing apparatus, wherein the boat has a mostly circular cross section in a direction perpendicular to its longitudinal direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9013088U JPH0211165U (en) | 1988-07-07 | 1988-07-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9013088U JPH0211165U (en) | 1988-07-07 | 1988-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0211165U true JPH0211165U (en) | 1990-01-24 |
Family
ID=31314662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9013088U Pending JPH0211165U (en) | 1988-07-07 | 1988-07-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0211165U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51131566U (en) * | 1975-04-12 | 1976-10-23 |
-
1988
- 1988-07-07 JP JP9013088U patent/JPH0211165U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51131566U (en) * | 1975-04-12 | 1976-10-23 | ||
| JPS5342694Y2 (en) * | 1975-04-12 | 1978-10-14 |
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