JPS5346285A - Mesa type high breakdown voltage semiconductor device - Google Patents

Mesa type high breakdown voltage semiconductor device

Info

Publication number: JPS5346285A
Authority: JP; Japan
Prior art keywords: breakdown voltage; high breakdown; semiconductor device; type high; voltage semiconductor
Prior art date: 1976-10-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP12108776A

Other languages

English (en)

Japanese (ja)

Inventor

Yutaka Misawa

Tomoyuki Tanaka

Masahiro Okamura

Hiroshi Kaneko

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-10-08

Filing date

1976-10-08

Publication date

1978-04-25

1976-10-08 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1976-10-08 Priority to JP12108776A priority Critical patent/JPS5346285A/ja

1977-10-07 Priority to DE19772745300 priority patent/DE2745300C2/de

1978-04-25 Publication of JPS5346285A publication Critical patent/JPS5346285A/ja

Status Pending legal-status Critical Current

Classifications

- H01L29/7325—
- H01L29/0661—
- H01L29/74—
- H01L29/8613—

Landscapes

Bipolar Transistors (AREA)
Thyristors (AREA)
Formation Of Insulating Films (AREA)

JP12108776A 1976-10-08 1976-10-08 Mesa type high breakdown voltage semiconductor device Pending JPS5346285A (en)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP12108776A JPS5346285A (en)	1976-10-08	1976-10-08	Mesa type high breakdown voltage semiconductor device
DE19772745300 DE2745300C2 (de)	1976-10-08	1977-10-07	Mesa-Halbleiterbauelement

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP12108776A JPS5346285A (en)	1976-10-08	1976-10-08	Mesa type high breakdown voltage semiconductor device

Publications (1)

Publication Number	Publication Date
JPS5346285A true JPS5346285A (en)	1978-04-25

Family

ID=14802535

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP12108776A Pending JPS5346285A (en)	1976-10-08	1976-10-08	Mesa type high breakdown voltage semiconductor device

Country Status (2)

Country	Link
JP (1)	JPS5346285A (de)
DE (1)	DE2745300C2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3151141A1 (de) *	1981-12-23	1983-06-30	Siemens AG, 1000 Berlin und 8000 München	Halbleiterbauelement mit hoher stossstrombelastbarkeit
EP0604163B1 (de) *	1992-12-21	1999-03-24	STMicroelectronics, Inc.	Diodenstruktur mit PN-Übergang
JPH06342902A (ja) *	1993-06-01	1994-12-13	Komatsu Ltd	高耐圧半導体装置
US5880511A (en) *	1995-06-30	1999-03-09	Semtech Corporation	Low-voltage punch-through transient suppressor employing a dual-base structure
CN104900692A (zh) *	2015-06-15	2015-09-09	江苏东晨电子科技有限公司	一种台面晶闸管及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1439417B2 (de) *	1964-07-21	1976-09-23	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen einer halbleiteranordnung
CH426020A (de) *	1965-09-08	1966-12-15	Bbc Brown Boveri & Cie	Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
US3414780A (en) *	1966-01-06	1968-12-03	Int Rectifier Corp	High voltage semiconductor device with electrical gradient-reducing groove
US3628106A (en) *	1969-05-05	1971-12-14	Gen Electric	Passivated semiconductor device with protective peripheral junction portion

1976
- 1976-10-08 JP JP12108776A patent/JPS5346285A/ja active Pending
1977
- 1977-10-07 DE DE19772745300 patent/DE2745300C2/de not_active Expired

Also Published As

Publication number	Publication date
DE2745300C2 (de)	1984-05-17
DE2745300A1 (de)	1978-04-13

Similar Documents

Publication	Publication Date	Title
JPS5297666A (en)	1977-08-16	Production of semiconductor device containing pn junctions
JPS5356972A (en)	1978-05-23	Mesa type semiconductor device
JPS5346285A (en)	1978-04-25	Mesa type high breakdown voltage semiconductor device
JPS53108776A (en)	1978-09-21	Semiconductor device
JPS52135685A (en)	1977-11-12	Semiconductor device
JPS55111171A (en)	1980-08-27	Field-effect semiconductor device
JPS5338271A (en)	1978-04-08	Semiconductor device
JPS5272586A (en)	1977-06-17	Production of semiconductor device
JPS5376760A (en)	1978-07-07	Semiconductor rectifying device
JPS5513990A (en)	1980-01-31	Semiconductor device
JPS52103982A (en)	1977-08-31	Composite semiconductor device
JPS5316587A (en)	1978-02-15	Semiconductor device
JPS5214377A (en)	1977-02-03	Semiconductor device
JPS5377476A (en)	1978-07-08	Semiconductor integrated circuit device
JPS5339073A (en)	1978-04-10	Semiconductor device
JPS5321582A (en)	1978-02-28	Mos type semiconductor device
JPS5373081A (en)	1978-06-29	Manufacture of mis-type semiconductor device
JPS5325372A (en)	1978-03-09	Mos ty pe semiconductor device
JPS52129384A (en)	1977-10-29	Varactor device
JPS5563879A (en)	1980-05-14	Semiconductor device
JPS5329082A (en)	1978-03-17	Semiconductor device
JPS51139272A (en)	1976-12-01	Semi-conductor device
JPS5264883A (en)	1977-05-28	Semiconductor element
JPS5342565A (en)	1978-04-18	Hetero junction transistor
JPS5318980A (en)	1978-02-21	High breakdown voltage field effect semiconductor device