[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5377476A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5377476A
JPS5377476A JP15460676A JP15460676A JPS5377476A JP S5377476 A JPS5377476 A JP S5377476A JP 15460676 A JP15460676 A JP 15460676A JP 15460676 A JP15460676 A JP 15460676A JP S5377476 A JPS5377476 A JP S5377476A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
type
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15460676A
Other languages
Japanese (ja)
Other versions
JPS6029229B2 (en
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51154606A priority Critical patent/JPS6029229B2/en
Publication of JPS5377476A publication Critical patent/JPS5377476A/en
Publication of JPS6029229B2 publication Critical patent/JPS6029229B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain MIS'IC with a long gate charge storage time by providing a well type area which is the same conductive type as the substrate and has a high impurity density in the semiconductor substrate and diffusing opposite conductive-type impurity in this area to form PN-junction.
JP51154606A 1976-12-21 1976-12-21 Semiconductor integrated circuit device Expired JPS6029229B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51154606A JPS6029229B2 (en) 1976-12-21 1976-12-21 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51154606A JPS6029229B2 (en) 1976-12-21 1976-12-21 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5377476A true JPS5377476A (en) 1978-07-08
JPS6029229B2 JPS6029229B2 (en) 1985-07-09

Family

ID=15587846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51154606A Expired JPS6029229B2 (en) 1976-12-21 1976-12-21 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6029229B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727054A (en) * 1980-06-19 1982-02-13 Rockwell International Corp Selective access array circuit
JPH01101662A (en) * 1987-09-18 1989-04-19 Sgs Thomson Microelectron Inc Manufacture of cmos device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62187804U (en) * 1986-05-21 1987-11-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727054A (en) * 1980-06-19 1982-02-13 Rockwell International Corp Selective access array circuit
JPH01101662A (en) * 1987-09-18 1989-04-19 Sgs Thomson Microelectron Inc Manufacture of cmos device

Also Published As

Publication number Publication date
JPS6029229B2 (en) 1985-07-09

Similar Documents

Publication Publication Date Title
JPS54107278A (en) Semiconductor device
JPS5377476A (en) Semiconductor integrated circuit device
JPS5734363A (en) Semiconductor device
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
JPS53112687A (en) Semiconductor device
JPS5314586A (en) Mis type semiconductor memory device
JPS52115669A (en) Semiconductor memory device
JPS53121561A (en) Mos integrated circuit device
JPS5278389A (en) Semiconductor memory device
JPS5261976A (en) Semiconductor integrated circuit device and its production
JPS52149481A (en) Semiconductor integrated circuit device and its production
JPS538570A (en) Semiconductor device
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS5539688A (en) Integrated circuit device of semiconductors
JPS5350985A (en) Semiconductor memory device
JPS52137271A (en) Semiconductor device
JPS52112754A (en) Mos transistor constant-voltage circuit
JPS52135273A (en) Mos type semiconductor device
JPS5297683A (en) Semiconductor circuit device
JPS5339087A (en) Integrated circuit
JPS52107785A (en) Semiconductor unit
JPS52155074A (en) Semiconductor memory
JPS52103976A (en) Semiconductor integrated circuit
JPS5339073A (en) Semiconductor device