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JPS5922339A - Expanding device of wafer - Google Patents

Expanding device of wafer

Info

Publication number
JPS5922339A
JPS5922339A JP13235282A JP13235282A JPS5922339A JP S5922339 A JPS5922339 A JP S5922339A JP 13235282 A JP13235282 A JP 13235282A JP 13235282 A JP13235282 A JP 13235282A JP S5922339 A JPS5922339 A JP S5922339A
Authority
JP
Japan
Prior art keywords
wafer
expanding
film
stage
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13235282A
Other languages
Japanese (ja)
Inventor
Shigenari Takami
茂成 高見
Toshiyuki Yamaguchi
敏行 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP13235282A priority Critical patent/JPS5922339A/en
Publication of JPS5922339A publication Critical patent/JPS5922339A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enable to obtain easily size of the outside diameter of an expanded wafer and the expanding rate of the wafer at the expanding process of the semiconductor wafer by a method wherein scales are arranged to an expanding stage toward four directions from the center. CONSTITUTION:The scales 8 extending to four directions from the center are adhered to the upper face of the expanding stage 3. Moreover a ring type scale 7 centering at the center of the expanding face is adhered to the circumference of an expanding film 2. The wafer 1 finished with dicing is adhered on the expanding film 2. The wafer 1 adhered to the expanding film 2 thereof is fixed to an expanding ring 9 to be put on the expanding stage 3, the expanding ring 9 is engaged with the circumference of the expanding stage 3, and the wafer 1 is expanded toward all directions. When the expanding film 2 is expanded toward all directions on the stage 3, size of the outside diameter of the wafer 1 can be measured according to the displaced position in relation to the scales 8 on the outside circumference of the wafer 1. Moreover by comparing the displaced position of the outside circumference of the wafer 1, or the scale 7 adhered to the circumference of the expanding film 2 in relation to the scales 8, the expanding rate is obtained.

Description

【発明の詳細な説明】 〔１〕　　発明の目的 この発明は、半導体の（例えはシリコンの）ウェハーの
エキスバンド工程において、（１）エキスバンド率の測
定を容器にする。DETAILED DESCRIPTION OF THE INVENTION [1] Object of the Invention The present invention provides a container for (1) measurement of an expansion rate in an expansion process of a semiconductor (eg, silicon) wafer.

（２）　　ウェハーのエキスバンドフィルムへの位置合
せを簡単にするウェハーのエキスバンド装置を提供する
ことを目的とする。(2) It is an object of the present invention to provide a wafer expansion device that facilitates alignment of a wafer to an expansion film.

〔２〕従来例 従来ウェハーのエキスバンド工程では、一般にエキスバ
ンド率を次の式により求めこの値を管理している。[2] Conventional Example In the conventional wafer expansion process, the expansion rate is generally calculated using the following formula and this value is managed.

エキスバンド後のウェハーの外径 エキスバンド率＝ エキスバンド前のウェハーの外径 そしてウェハーの外径寸法はそのたびにノギス等の計測
器により測定をおこなっているため従来性が悪いという
欠点かあった。Outer diameter of the wafer after expansionExpansion rate = Outer diameter of the wafer before expansion and the outer diameter of the wafer are measured each time using a measuring instrument such as a caliper, which may be due to the disadvantage of poor conventional methods. Ta.

〔３〕　　発明の構成 この発明は上記欠点を除去せんとするものであり、その
要求とするところはエキスバンドフィルムにウェハを結
句は該エキスバンドフィルムをエキスバンドリングに張
設し、該エキスバンドリングをエキスバンドステージに
族１良してウェハを拡張するウェハのエキスバンド装置
において、エキスバンドステージに中心より４方に向け
て目＊’ｄ’１ｅＬ−Ｃ＆Ｌ７＋ウ−１−７、Ｑｚ−ｊ
ｘ、’；ｙｌ、装置ある。[3] Structure of the Invention The present invention is intended to eliminate the above-mentioned drawbacks, and requires that the wafer be placed on an extract band film, and that the extract band film be stretched over an extract band ring. In a wafer expander that expands the wafer by placing a ring on the expander stage, look in four directions from the center of the expander stage.
x,';yl, there is a device.

以下この発明を第１図乃至第６図に図示せる一実施例に
基づいて説明する。The present invention will be explained below based on an embodiment shown in FIGS. 1 to 6.

まず検貞・済のウェハ（１）ｌｉＬダイシングをおこな
い５盤目状の鋸目（８）を入れる。First, the inspected wafer (1) is subjected to liL dicing, and a fifth saw (8) is inserted.

このダイシングをしたウェハ（１）をエキスバンドフィ
ルム（粘剤フィルム）（２）上に貼りつける。This diced wafer (1) is pasted onto an extract band film (adhesive film) (2).

エキスバンドフィルム（２）に貼りつけたウェハ（１）
をエキスバンドリング（９）に取イ；］け、エキスバン
ドステージ（８）上に載せ、エキスバンドリング（９）
をエキスバンドステージ（８）に層成してウェハ（１）
を四方に拡張する。この作業によりウェハー（１）は鋸
目（５）より切断され、独立したウェハチップ（４）と
なる。このウェハチップ（４）はエキスバンドフィルム
（２）１こ貼（＝Ｊけられた才まであり、吸引アクチュ
エーター（６）によりエキスバンドフィルム（２）より
引はがされ１個づつ次の作業工程に送り出されるのであ
る。Wafer (1) attached to extract band film (2)
Place it on the extract band ring (9); place it on the extract band stage (8), and then
The wafer (1) is layered on the expansion stage (8).
Expand in all directions. Through this operation, the wafer (1) is cut along the saw lines (5) to become independent wafer chips (4). This wafer chip (4) is pasted with one extract band film (2) (= J-cut), and is peeled off from the extract band film (2) by a suction actuator (6) and transferred to the next work step one by one. It will be sent to.

しかるにこの発Ｈ）Ｊにおいてはエキスバンドステージ
（８）の上面に中央より４分に伸ひる目盛（８）が付さ
れている。またエキスバンドフィルム（２）の周囲には
エキスバンド面の中心を中心とするリング状目盛（７）
が付されている。However, in this case H)J, a scale (8) extending from the center to 4 minutes is attached to the top surface of the expansion stage (8). Also, around the extract band film (2) there is a ring-shaped scale (7) centered at the center of the extract band surface.
is attached.

面シてエキスバンドステージ（８）Ｊ二でエキスバンド
フィルム（２）を４分に向かって拡張するとき、ウェハ
ー（１）の外周の目盛（８）に刻する変位位置により、
ウェハー（１）の外径寸法か測定できる。またウェハー
（１）の外周または、エキスバンドフィルム（２）の周
囲にイ；ｊした目盛（７）の目盛（８）に対する変位位
置の比較によりエキスバンド率を求めることも容易にで
きるのである。When expanding the expand film (2) toward 4 minutes on the expand band stage (8) J2, the displacement position marked on the scale (8) on the outer periphery of the wafer (1)
The outer diameter of the wafer (1) can be measured. Furthermore, the expansion ratio can be easily determined by comparing the displacement position of the scale (7) on the outer periphery of the wafer (1) or around the expansion film (2) with respect to the scale (8).

〔４〕　　発明の効果 叙上の如くこの発明によれは拡張するエキスバンドフィ
ルム（２）ヲエキスバンドステージ（８）の上面に何さ
れた目盛と直接比較できるので、拡張した。ウェハー（
１）外径の寸法及びウェハー（１）エキスバンド率を容
易に求めることができるのである。[4] Effects of the Invention As described above, according to the present invention, the expansion band film (2) can be directly compared with the scale formed on the top surface of the expansion band stage (8), so that the curve is expanded. Wafer (
1) The outer diameter dimension and wafer (1) expansion rate can be easily determined.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第６図はこの発明の一実施例を示す図で、第
１図は斜視図、第２図乃至第４図、第６図の（ａ）図及
び第５図は斜視図、第２図乃至第４図及び第６図の（ｂ
）図は各々（ａ）図の断面図である。 第１図 第２因 第３図 （ａ＞　　　　　　　　　　　　　（ｂ）第４図 第６図 （α） ＬＩ1 to 6 are views showing an embodiment of the present invention, in which FIG. 1 is a perspective view, FIGS. 2 to 4, FIG. 6(a), and FIG. 5 are perspective views; (b) in Figures 2 to 4 and 6.
) Each figure is a cross-sectional view of figure (a). Figure 1 Figure 2 Cause Figure 3 (a> (b) Figure 4 Figure 6 (α) LI

Claims (1)

【特許請求の範囲】[Claims] （１）　　エキスバンドフィルムにウニハラ貼付ケ該エ
キスバンドフィルムをエキスバンドリングに張設し、該
エキスバンドリングをエキスバンドステージに層成して
ウェハを拡張するウェハのエキスバンドｋｌｋにおいて
、エキスバンドステージ番コ中心より４力に向けて目盛
を配して成るウェハのエキスバンド装置６：。(1) Attaching sea urchins to the extract band film: Attach the extract band film to the extract band ring, and expand the wafer by layering the extract band ring on the extract band stage. A wafer expansion device 6 consisting of a scale arranged from the center of the number toward the four forces.
JP13235282A 1982-07-28 1982-07-28 Expanding device of wafer Pending JPS5922339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13235282A JPS5922339A (en) 1982-07-28 1982-07-28 Expanding device of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13235282A JPS5922339A (en) 1982-07-28 1982-07-28 Expanding device of wafer

Publications (1)

Publication Number Publication Date
JPS5922339A true JPS5922339A (en) 1984-02-04

Family

ID=15079347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13235282A Pending JPS5922339A (en) 1982-07-28 1982-07-28 Expanding device of wafer

Country Status (1)

Country Link
JP (1) JPS5922339A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270260A (en) * 1990-08-23 1993-12-14 Siemens Aktiengesellschaft Method and apparatus for connecting a semiconductor chip to a carrier system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270260A (en) * 1990-08-23 1993-12-14 Siemens Aktiengesellschaft Method and apparatus for connecting a semiconductor chip to a carrier system

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