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JPS5752166A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5752166A
JPS5752166A JP12771780A JP12771780A JPS5752166A JP S5752166 A JPS5752166 A JP S5752166A JP 12771780 A JP12771780 A JP 12771780A JP 12771780 A JP12771780 A JP 12771780A JP S5752166 A JPS5752166 A JP S5752166A
Authority
JP
Japan
Prior art keywords
region
triangular
projection
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12771780A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP12771780A priority Critical patent/JPS5752166A/en
Publication of JPS5752166A publication Critical patent/JPS5752166A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To form a short channel MISFET by forming a region having a projection on the surface of a semiconductor substrate and forming a triangular layer by utilizig the stepwise difference of the corner of the projection. CONSTITUTION:An N type semiconductor layer is formed on a P type silicon single crystalline substrate 1, is patterned, and the first region 19 is formed. Then, a nitrided silicon film 4 is formed on the surface, and openings 41, 42 are formed. Then, P type silicon is covered, a photoresist mask is used to perform plasma etching vertically, and a triangular region 6 and leads 9, 25 are formed. Then, the first region 13 and the region 14 are formed by an ion injection and solid diffusion method. The triangular layer 6 is isolated via the film 4, is dynamically reinforced, and can be used as the gate of a short channel MISFET.
JP12771780A 1980-09-13 1980-09-13 Manufacture of semiconductor device Pending JPS5752166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12771780A JPS5752166A (en) 1980-09-13 1980-09-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12771780A JPS5752166A (en) 1980-09-13 1980-09-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5752166A true JPS5752166A (en) 1982-03-27

Family

ID=14966957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12771780A Pending JPS5752166A (en) 1980-09-13 1980-09-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6186145A (en) * 1984-10-03 1986-05-01 Rokuroku Sangyo Kk Machining center for longitudinal and horizontal use

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6186145A (en) * 1984-10-03 1986-05-01 Rokuroku Sangyo Kk Machining center for longitudinal and horizontal use
JPH0123261B2 (en) * 1984-10-03 1989-05-01 Rokuroku Sangyo Kk

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