JPS5762567A - Manufacture of mos type semiconductor device - Google Patents
Manufacture of mos type semiconductor deviceInfo
- Publication number
- JPS5762567A JPS5762567A JP13846880A JP13846880A JPS5762567A JP S5762567 A JPS5762567 A JP S5762567A JP 13846880 A JP13846880 A JP 13846880A JP 13846880 A JP13846880 A JP 13846880A JP S5762567 A JPS5762567 A JP S5762567A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- film
- semiconductor device
- substrate
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To improve the operating speed of a semiconductor device and to reduce the power consumption of the device by forming a tapered insulating film on the peripheral side surface of a gate electrode formed on a substrate and introducing impurity for imparting conductivity with the gate electrode and the insulating film as masks. CONSTITUTION:A field oxidized film 2 and a gate oxidized film 3 are formed on a P type Si substrate 1, and a gate electrode 4 is formed. After a CVD-SiO2 film 5 is accumulated on the overall surface, the film 5 and the film 3 are etched to expose the gate electrode 4 and the substrate 1. Then, a tapered SiO2 film 6 is formed on the peripheral side surface of the gate electrode 4. With the remaining gate electrode as a mask phosphorus is diffused, and an insulated gate FET in which the superposition of n<+> type source and drain regions 7, 8 with the gate electrode is zero can be formed. In this manner, the operating characteristics can be improved with reduced power consumption in an MOS type semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13846880A JPS5762567A (en) | 1980-10-03 | 1980-10-03 | Manufacture of mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13846880A JPS5762567A (en) | 1980-10-03 | 1980-10-03 | Manufacture of mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5762567A true JPS5762567A (en) | 1982-04-15 |
Family
ID=15222743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13846880A Pending JPS5762567A (en) | 1980-10-03 | 1980-10-03 | Manufacture of mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762567A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5337507A (en) * | 1992-06-20 | 1994-08-16 | Daiwa Seiko, Inc. | Handle for fishing rod |
| JP2008118927A (en) * | 2006-11-13 | 2008-05-29 | Shimano Inc | Grip for fishing rod |
-
1980
- 1980-10-03 JP JP13846880A patent/JPS5762567A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5337507A (en) * | 1992-06-20 | 1994-08-16 | Daiwa Seiko, Inc. | Handle for fishing rod |
| JP2008118927A (en) * | 2006-11-13 | 2008-05-29 | Shimano Inc | Grip for fishing rod |
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