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JPS5739579A - Mos semiconductor device and manufacture thereof - Google Patents

Mos semiconductor device and manufacture thereof

Info

Publication number
JPS5739579A
JPS5739579A JP55114228A JP11422880A JPS5739579A JP S5739579 A JPS5739579 A JP S5739579A JP 55114228 A JP55114228 A JP 55114228A JP 11422880 A JP11422880 A JP 11422880A JP S5739579 A JPS5739579 A JP S5739579A
Authority
JP
Japan
Prior art keywords
layer
injected
mask
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55114228A
Other languages
Japanese (ja)
Other versions
JPS641068B2 (en
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55114228A priority Critical patent/JPS5739579A/en
Publication of JPS5739579A publication Critical patent/JPS5739579A/en
Publication of JPS641068B2 publication Critical patent/JPS641068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the decrease in the channel length while maintaining the thickness of a silicon layer thickly by burying an insulator layer in a semiconductor layer directly under source and drain. CONSTITUTION:A p type silicon film is grown on a sapphire substrate 111, an insular silicon layer 112 is then formed by selective etching, and an SiO2 film 113 is formed on the surface. Subsequently, a polycrystalline silicon layer is laminated, with a photoresist film 115 as a mask it is selectively etched to form a gate electrode 114, and a photoresist film 115 as a mask oxygen ions are injected to form an oxygen injection layer 116. Then, the oxygen injected by heat treatment is reacted with the silicon therearound to form an SiO2 layer 117. With the gate electrode 114 as a mask arsenic ions are injected to form a source region 118 and a drain region 119.
JP55114228A 1980-08-20 1980-08-20 Mos semiconductor device and manufacture thereof Granted JPS5739579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55114228A JPS5739579A (en) 1980-08-20 1980-08-20 Mos semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55114228A JPS5739579A (en) 1980-08-20 1980-08-20 Mos semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5739579A true JPS5739579A (en) 1982-03-04
JPS641068B2 JPS641068B2 (en) 1989-01-10

Family

ID=14632440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55114228A Granted JPS5739579A (en) 1980-08-20 1980-08-20 Mos semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5739579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373893A2 (en) * 1988-12-13 1990-06-20 Mitsubishi Denki Kabushiki Kaisha MOS type field effect transistor formed on a semiconductor layer on an insulator substrate
JP2017046006A (en) * 2011-07-22 2017-03-02 株式会社半導体エネルギー研究所 Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236983A (en) * 1975-09-18 1977-03-22 Matsushita Electric Ind Co Ltd Mos type semiconductor integrated circuit device and process for produ ction of same
JPS5293277A (en) * 1976-01-30 1977-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5390885A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Integrated semiconductor device containing mis transistor and its manufacture
JPS5474682A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor and its manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236983A (en) * 1975-09-18 1977-03-22 Matsushita Electric Ind Co Ltd Mos type semiconductor integrated circuit device and process for produ ction of same
JPS5293277A (en) * 1976-01-30 1977-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5390885A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Integrated semiconductor device containing mis transistor and its manufacture
JPS5474682A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373893A2 (en) * 1988-12-13 1990-06-20 Mitsubishi Denki Kabushiki Kaisha MOS type field effect transistor formed on a semiconductor layer on an insulator substrate
JP2017046006A (en) * 2011-07-22 2017-03-02 株式会社半導体エネルギー研究所 Semiconductor device
US10157939B2 (en) 2011-07-22 2018-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell which includes transistor and capacitor

Also Published As

Publication number Publication date
JPS641068B2 (en) 1989-01-10

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