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JPS57109323A - Plasma chemical vapor-phase growing method - Google Patents

Plasma chemical vapor-phase growing method

Info

Publication number
JPS57109323A
JPS57109323A JP18371380A JP18371380A JPS57109323A JP S57109323 A JPS57109323 A JP S57109323A JP 18371380 A JP18371380 A JP 18371380A JP 18371380 A JP18371380 A JP 18371380A JP S57109323 A JPS57109323 A JP S57109323A
Authority
JP
Japan
Prior art keywords
substrate
film
chemical vapor
grown
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18371380A
Other languages
Japanese (ja)
Other versions
JPS6262043B2 (en
Inventor
Yoshimi Shiotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18371380A priority Critical patent/JPS57109323A/en
Publication of JPS57109323A publication Critical patent/JPS57109323A/en
Publication of JPS6262043B2 publication Critical patent/JPS6262043B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent the deterioration of film quality due to the mixture of ingredients other than the desired ones by a method wherein raw gas is subjected to a plasma, and when it comes in contact with a heated substrate, the substrate to be processed is heated up to 450 deg.C or above, and a plasma CVD is grown. CONSTITUTION:Silicon is grown by the plasma CVD while heating the substrate to be processed at the temperature of 450 deg.C or above which is higher than that heretofore in use, harmful ingredients such as hydrogen or fluorine or the like is removed while the growing is in progress, and a silicon layer having an excellent film quality, to be used for graphoepitaxial, is obtained. Accordingly, the conductive type of the film is hard to be controlled while the growing is in progress due to the introduction of impurities and after the high temperature annealing has been performed, air bubbles and exforiation are not generated and the film is stabilized, thereby enabling to activate the impurities easily and to obtain the desired conductive type resistance value.
JP18371380A 1980-12-26 1980-12-26 Plasma chemical vapor-phase growing method Granted JPS57109323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18371380A JPS57109323A (en) 1980-12-26 1980-12-26 Plasma chemical vapor-phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18371380A JPS57109323A (en) 1980-12-26 1980-12-26 Plasma chemical vapor-phase growing method

Publications (2)

Publication Number Publication Date
JPS57109323A true JPS57109323A (en) 1982-07-07
JPS6262043B2 JPS6262043B2 (en) 1987-12-24

Family

ID=16140649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18371380A Granted JPS57109323A (en) 1980-12-26 1980-12-26 Plasma chemical vapor-phase growing method

Country Status (1)

Country Link
JP (1) JPS57109323A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064779A (en) * 1989-02-08 1991-11-12 President Of Kanazawa University Method of manufacturing polycrystalline silicon film
US5527718A (en) * 1993-12-28 1996-06-18 Sony Corporation Process for removing impurities from polycide electrode and insulating film using heat

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064779A (en) * 1989-02-08 1991-11-12 President Of Kanazawa University Method of manufacturing polycrystalline silicon film
US5527718A (en) * 1993-12-28 1996-06-18 Sony Corporation Process for removing impurities from polycide electrode and insulating film using heat

Also Published As

Publication number Publication date
JPS6262043B2 (en) 1987-12-24

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