JPS57149781A - Semiconductor luminous device - Google Patents
Semiconductor luminous deviceInfo
- Publication number
- JPS57149781A JPS57149781A JP3506281A JP3506281A JPS57149781A JP S57149781 A JPS57149781 A JP S57149781A JP 3506281 A JP3506281 A JP 3506281A JP 3506281 A JP3506281 A JP 3506281A JP S57149781 A JPS57149781 A JP S57149781A
- Authority
- JP
- Japan
- Prior art keywords
- light
- section
- reflective film
- window
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To improve the fetching efficiency of light by a method wherein a reflective section is provided around a luminous section and constitution is made to fetch the light which is nearly in parallel with a pn junction surface by reflecting the light in the longitudinal direction. CONSTITUTION:A conical projected section is formed at the central position of the p-clad layer 2 and a p-active layer 3 of a light emitting element and a reflective film 10 consisting of an SiO2 film and a chrome film are deposited on the inside of the projected section. The reflective film 10 forms projected shape for a fetching window 8 and a projection-shaped electrode 11 is provided in ring shape around the reflective film. In this way, a luminous section L becomes ring shape and light in the longitudinal direction reaches the window 8 by transmitting an n-clad layer 4 and the light which runs to the center from the luminous section and is in parallel with a pn junction is also reflected by the reflective film 10 and the light is converted to nearly longitudinal direction to fetch from the window 8. As a result, the fetching efficiency of light is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506281A JPS57149781A (en) | 1981-03-11 | 1981-03-11 | Semiconductor luminous device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506281A JPS57149781A (en) | 1981-03-11 | 1981-03-11 | Semiconductor luminous device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57149781A true JPS57149781A (en) | 1982-09-16 |
Family
ID=12431528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3506281A Pending JPS57149781A (en) | 1981-03-11 | 1981-03-11 | Semiconductor luminous device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57149781A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009510730A (en) * | 2005-09-30 | 2009-03-12 | ラティス パワー （チアンシ） コーポレイション | Semiconductor light emitting device and manufacturing method thereof |
-
1981
- 1981-03-11 JP JP3506281A patent/JPS57149781A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009510730A (en) * | 2005-09-30 | 2009-03-12 | ラティス パワー （チアンシ） コーポレイション | Semiconductor light emitting device and manufacturing method thereof |
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