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JPS5448155A - Quality lmprovement method for semiconductor substrate - Google Patents

Quality lmprovement method for semiconductor substrate

Info

Publication number
JPS5448155A
JPS5448155A JP11455877A JP11455877A JPS5448155A JP S5448155 A JPS5448155 A JP S5448155A JP 11455877 A JP11455877 A JP 11455877A JP 11455877 A JP11455877 A JP 11455877A JP S5448155 A JPS5448155 A JP S5448155A
Authority
JP
Japan
Prior art keywords
gas
semiconductor substrate
heat treatment
wafer
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11455877A
Other languages
Japanese (ja)
Inventor
Ban Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11455877A priority Critical patent/JPS5448155A/en
Publication of JPS5448155A publication Critical patent/JPS5448155A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To eliminate the crystalline defect in the semiconductor substrate by applying the prescribed heat treatment to the semiconductor substrate.
CONSTITUTION: For the semiconductor substrate containing no silicon oxide film formed, a heat treatment is given for a necessary time in a gas atmosphere formed by mixing a fixed amount of oxygen gas and hydrogen chloride gas into the primary component inactive gas, otherwise a heat treatment of the necessary time corresponding to the composition of the atmospheric gas changed in terms of time. For the semiconductor substrate with silicon oxide film formed, a heat treatment is applied in the stmospheric gas composed by mixing a fixed amount of hydrogen chloride gas into the main component inactive gas. The wafer which is through with the quality improvement process features the lamination defect dinsity of 51cm2 up to a depth of about 10μm from the wafer surface, and the wafer underwent no improvement process has the defect density of about 105/cm2 respecitvely
COPYRIGHT: (C)1979,JPO&Japio
JP11455877A 1977-09-26 1977-09-26 Quality lmprovement method for semiconductor substrate Pending JPS5448155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11455877A JPS5448155A (en) 1977-09-26 1977-09-26 Quality lmprovement method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11455877A JPS5448155A (en) 1977-09-26 1977-09-26 Quality lmprovement method for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5448155A true JPS5448155A (en) 1979-04-16

Family

ID=14640803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11455877A Pending JPS5448155A (en) 1977-09-26 1977-09-26 Quality lmprovement method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5448155A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131935A (en) * 1980-03-19 1981-10-15 Sony Corp Heat treatment of semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131935A (en) * 1980-03-19 1981-10-15 Sony Corp Heat treatment of semiconductor substrate

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