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JPS5689742A - Mask for exposure - Google Patents

Mask for exposure

Info

Publication number
JPS5689742A
JPS5689742A JP16724179A JP16724179A JPS5689742A JP S5689742 A JPS5689742 A JP S5689742A JP 16724179 A JP16724179 A JP 16724179A JP 16724179 A JP16724179 A JP 16724179A JP S5689742 A JPS5689742 A JP S5689742A
Authority
JP
Japan
Prior art keywords
mask
dimensions
element patterns
lattice
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16724179A
Other languages
Japanese (ja)
Inventor
Toshikazu Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16724179A priority Critical patent/JPS5689742A/en
Publication of JPS5689742A publication Critical patent/JPS5689742A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To correct the error of dimensions in the etching process beforehand, by causing dimensions of plural element patterns, which are included in the mask for integrated circuit exposure, to be different relatively in the center part and the edge part of the mask. CONSTITUTION:In case of production of elements or circuits in the etching process out of production processes for the semiconductor device such as an integrated circuit, the etching advance quantity is different in the center part and the edge part of the wafer. The mask for exposure where dimensions are adjusted previously in consideration of this error is produced. For example, in mask 11 for exposure used for etching advance from the edge part of the wafer, dimensions of element patterns in lattice 14 placed in the edge part are set to large values relatively in comparison with those of element patterns in lattice 15 of the center part, and dimensions of element patterns in lattice 16 of the middle part are set to large values relatively in comparison with those of element patterns in lattice 15 of the center part.
JP16724179A 1979-12-22 1979-12-22 Mask for exposure Pending JPS5689742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16724179A JPS5689742A (en) 1979-12-22 1979-12-22 Mask for exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16724179A JPS5689742A (en) 1979-12-22 1979-12-22 Mask for exposure

Publications (1)

Publication Number Publication Date
JPS5689742A true JPS5689742A (en) 1981-07-21

Family

ID=15846069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16724179A Pending JPS5689742A (en) 1979-12-22 1979-12-22 Mask for exposure

Country Status (1)

Country Link
JP (1) JPS5689742A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780382A (en) * 1985-11-13 1988-10-25 Ims Ionen Mikrofabrikations Systems Gesellschaft Mbh Process for making a transmission mask
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
JPH02242251A (en) * 1989-03-15 1990-09-26 Fujitsu Ltd Production of reticle
JPH0354712A (en) * 1989-07-21 1991-03-08 Tdk Corp Production of thin-film element
JP2003282429A (en) * 2002-01-28 2003-10-03 Samsung Electronics Co Ltd Patterning method for manufacturing semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780382A (en) * 1985-11-13 1988-10-25 Ims Ionen Mikrofabrikations Systems Gesellschaft Mbh Process for making a transmission mask
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
JPH02242251A (en) * 1989-03-15 1990-09-26 Fujitsu Ltd Production of reticle
JPH0354712A (en) * 1989-07-21 1991-03-08 Tdk Corp Production of thin-film element
JP2003282429A (en) * 2002-01-28 2003-10-03 Samsung Electronics Co Ltd Patterning method for manufacturing semiconductor device

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