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JPS5673697A - Manufacture of single crystal thin film - Google Patents

Manufacture of single crystal thin film

Info

Publication number
JPS5673697A
JPS5673697A JP15008079A JP15008079A JPS5673697A JP S5673697 A JPS5673697 A JP S5673697A JP 15008079 A JP15008079 A JP 15008079A JP 15008079 A JP15008079 A JP 15008079A JP S5673697 A JPS5673697 A JP S5673697A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
amorphous
desired part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15008079A
Other languages
English (en)
Inventor
Masao Tamura
Koji Kozuka
Yasuo Wada
Osamu Okura
Hiroshi Tamura
Takashi Tokuyama
Takahiro Okabe
Osamu Minato
Shinya Oba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15008079A priority Critical patent/JPS5673697A/ja
Priority to NL8006339A priority patent/NL8006339A/nl
Priority to DE19803043913 priority patent/DE3043913A1/de
Publication of JPS5673697A publication Critical patent/JPS5673697A/ja
Priority to US06/563,036 priority patent/US4609407A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15008079A 1979-11-21 1979-11-21 Manufacture of single crystal thin film Pending JPS5673697A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15008079A JPS5673697A (en) 1979-11-21 1979-11-21 Manufacture of single crystal thin film
NL8006339A NL8006339A (nl) 1979-11-21 1980-11-20 Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
DE19803043913 DE3043913A1 (de) 1979-11-21 1980-11-21 Halbleiteranordnung und verfahren zu ihrer herstellung
US06/563,036 US4609407A (en) 1979-11-21 1983-12-19 Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15008079A JPS5673697A (en) 1979-11-21 1979-11-21 Manufacture of single crystal thin film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP16184186A Division JPS6290922A (ja) 1986-07-11 1986-07-11 半導体装置

Publications (1)

Publication Number Publication Date
JPS5673697A true JPS5673697A (en) 1981-06-18

Family

ID=15489069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15008079A Pending JPS5673697A (en) 1979-11-21 1979-11-21 Manufacture of single crystal thin film

Country Status (1)

Country Link
JP (1) JPS5673697A (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144533A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Manufacture of semiconductor device
JPS5823431A (ja) * 1981-08-04 1983-02-12 Mitsubishi Electric Corp 半導体基体の製作方法
JPS5831553A (ja) * 1981-08-18 1983-02-24 Seiko Epson Corp 半導体装置とその製造方法
JPS5831515A (ja) * 1981-08-18 1983-02-24 Nec Corp 半導体薄膜の製造方法
JPS5831552A (ja) * 1981-08-18 1983-02-24 Seiko Epson Corp 半導体装置の製造方法
JPS5922318A (ja) * 1982-07-29 1984-02-04 Nec Corp 単結晶半導体層の形成方法
US4472729A (en) * 1981-08-31 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Recrystallized three dimensional integrated circuit
JPS6020531A (ja) * 1983-06-21 1985-02-01 ソシエテ・プール・レチユード・エ・ラ・フアブリカシオン・デ・シルキユイ・アンラグレ・スペシオー―ウ―・エフ・セー・イー・エス 半導体ウエハに絶縁半導体素子を製造する方法
US4500388A (en) * 1981-11-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Method for forming monocrystalline semiconductor film on insulating film
JPS60245124A (ja) * 1984-05-18 1985-12-04 Sony Corp 半導体装置の製法
JPS60246621A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol シリコン結晶層の製造方法
JPS61113228A (ja) * 1984-11-08 1986-05-31 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
JPH01264999A (ja) * 1989-01-13 1989-10-23 Seiko Epson Corp 単結晶Ｓｉ膜育成装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144533A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Manufacture of semiconductor device
JPS5823431A (ja) * 1981-08-04 1983-02-12 Mitsubishi Electric Corp 半導体基体の製作方法
JPS5831553A (ja) * 1981-08-18 1983-02-24 Seiko Epson Corp 半導体装置とその製造方法
JPS5831515A (ja) * 1981-08-18 1983-02-24 Nec Corp 半導体薄膜の製造方法
JPS5831552A (ja) * 1981-08-18 1983-02-24 Seiko Epson Corp 半導体装置の製造方法
JPH0420266B2 (ja) * 1981-08-18 1992-04-02 Seiko Epson Corp
US4472729A (en) * 1981-08-31 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Recrystallized three dimensional integrated circuit
US4500388A (en) * 1981-11-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Method for forming monocrystalline semiconductor film on insulating film
JPS5922318A (ja) * 1982-07-29 1984-02-04 Nec Corp 単結晶半導体層の形成方法
JPS6020531A (ja) * 1983-06-21 1985-02-01 ソシエテ・プール・レチユード・エ・ラ・フアブリカシオン・デ・シルキユイ・アンラグレ・スペシオー―ウ―・エフ・セー・イー・エス 半導体ウエハに絶縁半導体素子を製造する方法
US5387537A (en) * 1983-06-21 1995-02-07 Soclete Pour I'etude Et Al Fabrication De Circuits Integres Speciaux E.F.C.I.S. Process for manufacturing isolated semiconductor components in a semiconductor wafer
US5457338A (en) * 1983-06-21 1995-10-10 Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux E.F.C.I.S. Process for manufacturing isolated semi conductor components in a semi conductor wafer
JPS60245124A (ja) * 1984-05-18 1985-12-04 Sony Corp 半導体装置の製法
JPS60246621A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol シリコン結晶層の製造方法
JPH0236051B2 (ja) * 1984-05-22 1990-08-15 Kogyo Gijutsuin
JPS61113228A (ja) * 1984-11-08 1986-05-31 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
JPH01264999A (ja) * 1989-01-13 1989-10-23 Seiko Epson Corp 単結晶Ｓｉ膜育成装置

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