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JPS566444A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS566444A
JPS566444A JP8192379A JP8192379A JPS566444A JP S566444 A JPS566444 A JP S566444A JP 8192379 A JP8192379 A JP 8192379A JP 8192379 A JP8192379 A JP 8192379A JP S566444 A JPS566444 A JP S566444A
Authority
JP
Japan
Prior art keywords
layer
monocrystaline
amorphous
substrate
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8192379A
Other languages
Japanese (ja)
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8192379A priority Critical patent/JPS566444A/en
Publication of JPS566444A publication Critical patent/JPS566444A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To make possible formation of monocrystal layer on the layer of amorphous nature or the like by irradiating radiant rays on the semiconductor thin film, amorphous or polycrystaline on the monocrystaline substrate provided with an etched insulator film with window to anneal. CONSTITUTION:A silicone oxide film 2 of 2,500Angstrom , for instance, is provided on the monocrystaline silicone substrate 1 and etched at a space of 30mum in a slit 2mum wide to expose the surface of the substrate on which the polycrystaline silicone layer 4 is formed. Then, laser beam of Nd: YAG is irradiated thereon to anneal it with an energy density of 1-2Joule/cm<2> whereby the layer 4 is monocrystalized. This allows the formation of the monocrystaline semiconductor device on the amorphous film or the like. The multilayer formation enables the production of the device with a cubic structure.
JP8192379A 1979-06-28 1979-06-28 Production of semiconductor device Pending JPS566444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8192379A JPS566444A (en) 1979-06-28 1979-06-28 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8192379A JPS566444A (en) 1979-06-28 1979-06-28 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS566444A true JPS566444A (en) 1981-01-23

Family

ID=13759971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8192379A Pending JPS566444A (en) 1979-06-28 1979-06-28 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS566444A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180144A (en) * 1981-04-28 1982-11-06 Toshiba Corp Manufacture of semiconductor device
JPS57200567U (en) * 1981-06-15 1982-12-20
JPS57211723A (en) * 1981-06-24 1982-12-25 Seiko Epson Corp Manufacture of semiconductor substrate
EP0080851A2 (en) * 1981-11-30 1983-06-08 Kabushiki Kaisha Toshiba A method for forming monocrystalline semiconductor film on insulating film
JPS58175821A (en) * 1982-04-08 1983-10-15 Toshiba Corp Manufacture of semiconductor device
JPS62122120A (en) * 1986-01-10 1987-06-03 Seiko Epson Corp Manufacture of semiconductor substrate
JPS63111610A (en) * 1986-10-30 1988-05-16 Sharp Corp Semiconductor substrate
JPS63291416A (en) * 1987-05-25 1988-11-29 Sharp Corp Semiconductor substrate
KR100703033B1 (en) 2006-03-22 2007-04-09 삼성전자주식회사 Semiconductor device and method of manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180144A (en) * 1981-04-28 1982-11-06 Toshiba Corp Manufacture of semiconductor device
JPS6217867B2 (en) * 1981-04-28 1987-04-20 Tokyo Shibaura Electric Co
JPS57200567U (en) * 1981-06-15 1982-12-20
JPS6111233Y2 (en) * 1981-06-15 1986-04-09
JPS57211723A (en) * 1981-06-24 1982-12-25 Seiko Epson Corp Manufacture of semiconductor substrate
EP0080851A2 (en) * 1981-11-30 1983-06-08 Kabushiki Kaisha Toshiba A method for forming monocrystalline semiconductor film on insulating film
JPS58175821A (en) * 1982-04-08 1983-10-15 Toshiba Corp Manufacture of semiconductor device
JPS62122120A (en) * 1986-01-10 1987-06-03 Seiko Epson Corp Manufacture of semiconductor substrate
JPS63111610A (en) * 1986-10-30 1988-05-16 Sharp Corp Semiconductor substrate
JPS63291416A (en) * 1987-05-25 1988-11-29 Sharp Corp Semiconductor substrate
KR100703033B1 (en) 2006-03-22 2007-04-09 삼성전자주식회사 Semiconductor device and method of manufacturing the same

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