JPS564285A - Manufacture of planar type semiconductor device - Google Patents
Manufacture of planar type semiconductor deviceInfo
- Publication number
- JPS564285A JPS564285A JP7966179A JP7966179A JPS564285A JP S564285 A JPS564285 A JP S564285A JP 7966179 A JP7966179 A JP 7966179A JP 7966179 A JP7966179 A JP 7966179A JP S564285 A JPS564285 A JP S564285A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- opening
- film
- laminated
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005452 bending Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To provide a planar type semiconductor device having high breakdown voltage by forming laminated insulating films having large and small impurity diffusion coefficients, perforating an opening thereat, forming a polycrystalline layer containing impurity thereon, and diffusing the impurity therefrom into the substrate. CONSTITUTION:An SiO2 film 46 and an Si3N4 film 43 are laminated on an N-type Si substrate 41, a predetermined shape of photoresist film 48 is formed thereon, a dry etching process is conducted thereon with gas plasma to form an opening 42 at the laminated films. Then, a polycrystalline Si layer 49 including Ga is accumulated on the entire surface including the opening 42, is heat treated to diffuse the Ga in the substrate 41 to form a P-type region 44. In this manner the Ga is introduced from the side surface into the film 46 simultaneously when introducing the Ga into the substrate 41 to diffuse the Ga outside of the opening 42, and the P-N junction 45 thus formed may become smoothly curved state having no bending point. Accordingly, the breakdown voltage of the junction 45 may be enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7966179A JPS564285A (en) | 1979-06-26 | 1979-06-26 | Manufacture of planar type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7966179A JPS564285A (en) | 1979-06-26 | 1979-06-26 | Manufacture of planar type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS564285A true JPS564285A (en) | 1981-01-17 |
Family
ID=13696331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7966179A Pending JPS564285A (en) | 1979-06-26 | 1979-06-26 | Manufacture of planar type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS564285A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
| WO2003061015A1 (en) * | 2002-01-15 | 2003-07-24 | Robert Bosch Gmbh | Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement |
-
1979
- 1979-06-26 JP JP7966179A patent/JPS564285A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
| WO2003061015A1 (en) * | 2002-01-15 | 2003-07-24 | Robert Bosch Gmbh | Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement |
| US7199031B2 (en) * | 2002-01-15 | 2007-04-03 | Robert Bosch Gmbh | Semiconductor system having a pn transition and method for manufacturing a semiconductor system |
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