JPS5635464A - Formation of npn type transistor - Google Patents
Formation of npn type transistorInfo
- Publication number
- JPS5635464A JPS5635464A JP10969279A JP10969279A JPS5635464A JP S5635464 A JPS5635464 A JP S5635464A JP 10969279 A JP10969279 A JP 10969279A JP 10969279 A JP10969279 A JP 10969279A JP S5635464 A JPS5635464 A JP S5635464A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- layer
- sio2
- connection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To contrive the improvement in the characteristics of the NPN type transistor by disposing an N<+> type impurity source through a buffer film on the predetermined region on the surface of a semiconductor substrate, diffusing it and forming an N type collector connection layer thereon, and alleviating the crystal distortion on the surface of the connection layer. CONSTITUTION:An SiO2 film 4 is formed on an N type epitaxial layer 3 on a P type substrate 1 having an N<+> type buried layer 2, an opening is perforated at the layer 2, and an SiO2 buffer film 9 is newly formed therethrough. Then, a phosphorus oxychloride 10 is accumulated thereon, and a P diffusion source 60 is formed through the film 9. The phosphorus oxychloride 10 and the SiO2 9 are removed with HF solution, and P is diffused from the source 60. Then, a P<+> type isolation layer is selectively formed thereon, an SiO2 film 12 is coated thereon, an opening is selectively perforated thereat, a borosilicate glass film 13 is superimposed thereon, B is diffused in N2, and a P type base is formed thereon, openings are selectively perforated then at the films 13, 12, P-As silicate glass 14 is superimposed thereon, an N type emitter is formed by heat diffusion thereon, and P and As are superimposed on the N<+> type collector connection layer. This configuration can alleviate the strain in the vicinity of the surface of the collector connection layer, can improve the withstand voltage thereof, and can lower the noise level thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10969279A JPS5635464A (en) | 1979-08-30 | 1979-08-30 | Formation of npn type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10969279A JPS5635464A (en) | 1979-08-30 | 1979-08-30 | Formation of npn type transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5635464A true JPS5635464A (en) | 1981-04-08 |
Family
ID=14516769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10969279A Pending JPS5635464A (en) | 1979-08-30 | 1979-08-30 | Formation of npn type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5635464A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4945036A (en) * | 1972-08-18 | 1974-04-27 | ||
| JPS4965182A (en) * | 1972-07-05 | 1974-06-24 | ||
| JPS5279666A (en) * | 1975-12-25 | 1977-07-04 | Matsushita Electronics Corp | Production of transistor |
| JPS5339081A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-08-30 JP JP10969279A patent/JPS5635464A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4965182A (en) * | 1972-07-05 | 1974-06-24 | ||
| JPS4945036A (en) * | 1972-08-18 | 1974-04-27 | ||
| JPS5279666A (en) * | 1975-12-25 | 1977-07-04 | Matsushita Electronics Corp | Production of transistor |
| JPS5339081A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Semiconductor device |
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