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JPS5339081A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5339081A
JPS5339081A JP11312376A JP11312376A JPS5339081A JP S5339081 A JPS5339081 A JP S5339081A JP 11312376 A JP11312376 A JP 11312376A JP 11312376 A JP11312376 A JP 11312376A JP S5339081 A JPS5339081 A JP S5339081A
Authority
JP
Japan
Prior art keywords
reduce
forming
semiconductor device
layer
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11312376A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11312376A priority Critical patent/JPS5339081A/en
Publication of JPS5339081A publication Critical patent/JPS5339081A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the decrease in impurity concentration in a diffusion depth direction, reduce the series resistance of collector layer and enable large output to be obtained by forming a mild-sloped depression part in the epitaxial layer of the region surface to be formed and diffusing an impurity from here, in forming the collector contact layer.
COPYRIGHT: (C)1978,JPO&Japio
JP11312376A 1976-09-22 1976-09-22 Semiconductor device Pending JPS5339081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11312376A JPS5339081A (en) 1976-09-22 1976-09-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11312376A JPS5339081A (en) 1976-09-22 1976-09-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5339081A true JPS5339081A (en) 1978-04-10

Family

ID=14604097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11312376A Pending JPS5339081A (en) 1976-09-22 1976-09-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5339081A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635464A (en) * 1979-08-30 1981-04-08 Toshiba Corp Formation of npn type transistor
JPS6084997U (en) * 1983-11-16 1985-06-12 パイオニア株式会社 key controller
JPS60184298A (en) * 1984-03-01 1985-09-19 松下電器産業株式会社 Scale converter
JPS61185798A (en) * 1985-02-13 1986-08-19 パイオニア株式会社 Sound interval controller

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635464A (en) * 1979-08-30 1981-04-08 Toshiba Corp Formation of npn type transistor
JPS6084997U (en) * 1983-11-16 1985-06-12 パイオニア株式会社 key controller
JPS60184298A (en) * 1984-03-01 1985-09-19 松下電器産業株式会社 Scale converter
JPH0423800B2 (en) * 1984-03-01 1992-04-23 Matsushita Electric Ind Co Ltd
JPS61185798A (en) * 1985-02-13 1986-08-19 パイオニア株式会社 Sound interval controller
JPH0632017B2 (en) * 1985-02-13 1994-04-27 パイオニア株式会社 Pitch control device

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