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JPS5623752A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623752A
JPS5623752A JP9894979A JP9894979A JPS5623752A JP S5623752 A JPS5623752 A JP S5623752A JP 9894979 A JP9894979 A JP 9894979A JP 9894979 A JP9894979 A JP 9894979A JP S5623752 A JPS5623752 A JP S5623752A
Authority
JP
Japan
Prior art keywords
torr
ccl4
ethylene
pressure
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9894979A
Other languages
Japanese (ja)
Other versions
JPS6159658B2 (en
Inventor
Toru Okuma
Kenji Mitsui
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP9894979A priority Critical patent/JPS5623752A/en
Publication of JPS5623752A publication Critical patent/JPS5623752A/en
Publication of JPS6159658B2 publication Critical patent/JPS6159658B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an electrode having tapered state in cross section in a semiconductor device by adding a substance having halogen radical absorption group in halogen gas thereto to etch a resist mask on a metallic film. CONSTITUTION:High purity aluminum film is formed on an Si substrate, and a resist mask is formed thereon. CCl4 0.2 Torr, C2H4 0.095 Torr, and He 0.17 Torr are flowed and high frequency electric power is applied thereto. When ethylene is added to etching gas in this manner, there can be obtained an aluminum wiring layer forming a tapered state in cross section. When the partical pressure of the ethylene is represented by P1 under the partial pressure of CCl4 being P2, if a ratio of P2/P1 is increased, the tapered angle is reduced, however, the pressure ratio is preferably less than 50%, and if it is higher than that, the resist pattern is extremely worn out to lower the accuracy.
JP9894979A 1979-08-01 1979-08-01 Manufacture of semiconductor device Granted JPS5623752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9894979A JPS5623752A (en) 1979-08-01 1979-08-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9894979A JPS5623752A (en) 1979-08-01 1979-08-01 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5623752A true JPS5623752A (en) 1981-03-06
JPS6159658B2 JPS6159658B2 (en) 1986-12-17

Family

ID=14233344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9894979A Granted JPS5623752A (en) 1979-08-01 1979-08-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623752A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186335A (en) * 1981-05-12 1982-11-16 Nippon Telegr & Teleph Corp <Ntt> Forming method for pattern
JPS60221586A (en) * 1985-03-29 1985-11-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS6393553A (en) * 1986-10-03 1988-04-23 Mitsubishi Metal Corp Centerless grinder
JPH01240262A (en) * 1988-03-18 1989-09-25 Honda Motor Co Ltd Cutting of noncircular inner surface
US5686363A (en) * 1992-12-05 1997-11-11 Yamaha Corporation Controlled taper etching
US6846424B2 (en) * 1997-11-10 2005-01-25 Advanced Technology Materials, Inc. Plasma-assisted dry etching of noble metal-based materials

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236979A (en) * 1975-09-18 1977-03-22 Itt Method of etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236979A (en) * 1975-09-18 1977-03-22 Itt Method of etching

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186335A (en) * 1981-05-12 1982-11-16 Nippon Telegr & Teleph Corp <Ntt> Forming method for pattern
JPH0143453B2 (en) * 1981-05-12 1989-09-20 Nippon Telegraph & Telephone
JPS60221586A (en) * 1985-03-29 1985-11-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS6345469B2 (en) * 1985-03-29 1988-09-09 Nippon Telegraph & Telephone
JPS6393553A (en) * 1986-10-03 1988-04-23 Mitsubishi Metal Corp Centerless grinder
JPH01240262A (en) * 1988-03-18 1989-09-25 Honda Motor Co Ltd Cutting of noncircular inner surface
US5686363A (en) * 1992-12-05 1997-11-11 Yamaha Corporation Controlled taper etching
US6846424B2 (en) * 1997-11-10 2005-01-25 Advanced Technology Materials, Inc. Plasma-assisted dry etching of noble metal-based materials

Also Published As

Publication number Publication date
JPS6159658B2 (en) 1986-12-17

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