JPS56161674A - Metal oxide semiconductor device - Google Patents
Metal oxide semiconductor deviceInfo
- Publication number
- JPS56161674A JPS56161674A JP6474980A JP6474980A JPS56161674A JP S56161674 A JPS56161674 A JP S56161674A JP 6474980 A JP6474980 A JP 6474980A JP 6474980 A JP6474980 A JP 6474980A JP S56161674 A JPS56161674 A JP S56161674A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode wire
- wiring
- semiconductor device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 7
- 150000001875 compounds Chemical class 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011229 interlayer Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 238000007743 anodising Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the reproducibility and the reliability of a metal oxide semiconductor device by employing a compound layer of insoluble metal such as Ta or the like and a semiconductor such as Si or the like for a gate metallic layer and a wiring layer for an MOS structure, thereby eliminating high temperature treatment in the step of forming an electrode wire. CONSTITUTION:This is applied for a capacitive electrode wire 24 and a gate electrode wire 27 which heretofore used two-layer polysilicon in a circuit or the like having one-transistor type memory cell. A compound or mixture of, for example, Ta and Si is coated, for example, by a method such as a sputtering method instead of the polysilicon layers. Interlayer insulating layers 25, 29 are used by anodizing (or thermally oxidizing at low temperature) the compound layer as TaO5 (or TaO5 containing SiO2) having high moisture resistance. Thus, the high temperature treatment of approx. 1,000 deg.C becomes unnecessary in the step of wiring the electrode, and an MOS circuit having low resistivity, and excellent interlayer insulation electrode wiring structure can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6474980A JPS56161674A (en) | 1980-05-16 | 1980-05-16 | Metal oxide semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6474980A JPS56161674A (en) | 1980-05-16 | 1980-05-16 | Metal oxide semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56161674A true JPS56161674A (en) | 1981-12-12 |
Family
ID=13267114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6474980A Pending JPS56161674A (en) | 1980-05-16 | 1980-05-16 | Metal oxide semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56161674A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61212040A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Manufacture of semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5236477A (en) * | 1975-09-17 | 1977-03-19 | Philips Nv | Method of producing semiconductor device |
| JPS547864A (en) * | 1977-06-21 | 1979-01-20 | Toshiba Corp | Manufacture for semiconductor device |
| JPS54133089A (en) * | 1978-04-06 | 1979-10-16 | Nec Corp | Thin film capacitor and its manufacture |
-
1980
- 1980-05-16 JP JP6474980A patent/JPS56161674A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5236477A (en) * | 1975-09-17 | 1977-03-19 | Philips Nv | Method of producing semiconductor device |
| JPS547864A (en) * | 1977-06-21 | 1979-01-20 | Toshiba Corp | Manufacture for semiconductor device |
| JPS54133089A (en) * | 1978-04-06 | 1979-10-16 | Nec Corp | Thin film capacitor and its manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61212040A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH0789549B2 (en) * | 1985-03-18 | 1995-09-27 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
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