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JPS56158874A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS56158874A
JPS56158874A JP6299280A JP6299280A JPS56158874A JP S56158874 A JPS56158874 A JP S56158874A JP 6299280 A JP6299280 A JP 6299280A JP 6299280 A JP6299280 A JP 6299280A JP S56158874 A JPS56158874 A JP S56158874A
Authority
JP
Japan
Prior art keywords
cathode
bias voltage
input power
voltage state
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299280A
Other languages
Japanese (ja)
Other versions
JPS5727181B2 (en
Inventor
Hikosuke Shibayama
Tetsuya Ogawa
Masato Kosugi
Norishige Hisatsugu
Koichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6299280A priority Critical patent/JPS56158874A/en
Priority to EP81302077A priority patent/EP0040081B1/en
Priority to US06/262,793 priority patent/US4349409A/en
Priority to DE8181302077T priority patent/DE3165961D1/en
Publication of JPS56158874A publication Critical patent/JPS56158874A/en
Publication of JPS5727181B2 publication Critical patent/JPS5727181B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make damage-free working possible by first performing working in the high input power and high self-bias voltage state then working the same in the low input power and low self-bias voltage state in a plasma etching method having an intermediate electrode body.
CONSTITUTION: A cathode 2 and an anode 3 are opposedly disposed in parallel with an intermediate electrode body 7 in-between within a bell-jar 1, and a material 4 to be etched is placed on the cathode 2. A reacting gas such as C2F6 is sealed into the bell-jar 1, and plasma discharge is caused between the cathode 2 and the anode by a high-frequency power source 6, whereby the material 4 is plasma-etched. In this case, the etching is performed in the high input power and high self-bias voltage state. Next, the spacing between the body 7 and the cathode 2 is reduced and the material is continuously etched in the low input power and low-self bias voltage state, whereby the plasma etching which does not produce any damaged layer and staining deposit is made possible.
COPYRIGHT: (C)1981,JPO&Japio
JP6299280A 1980-05-12 1980-05-13 Plasma etching method Granted JPS56158874A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6299280A JPS56158874A (en) 1980-05-13 1980-05-13 Plasma etching method
EP81302077A EP0040081B1 (en) 1980-05-12 1981-05-11 Method and apparatus for plasma etching
US06/262,793 US4349409A (en) 1980-05-12 1981-05-11 Method and apparatus for plasma etching
DE8181302077T DE3165961D1 (en) 1980-05-12 1981-05-11 Method and apparatus for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299280A JPS56158874A (en) 1980-05-13 1980-05-13 Plasma etching method

Publications (2)

Publication Number Publication Date
JPS56158874A true JPS56158874A (en) 1981-12-07
JPS5727181B2 JPS5727181B2 (en) 1982-06-09

Family

ID=13216367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299280A Granted JPS56158874A (en) 1980-05-12 1980-05-13 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS56158874A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715424A (en) * 1980-07-01 1982-01-26 Matsushita Electric Ind Co Ltd Dry etching method
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Bias impression etching and device thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715424A (en) * 1980-07-01 1982-01-26 Matsushita Electric Ind Co Ltd Dry etching method
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Bias impression etching and device thereof

Also Published As

Publication number Publication date
JPS5727181B2 (en) 1982-06-09

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