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JPS56148833A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS56148833A
JPS56148833A JP5236180A JP5236180A JPS56148833A JP S56148833 A JPS56148833 A JP S56148833A JP 5236180 A JP5236180 A JP 5236180A JP 5236180 A JP5236180 A JP 5236180A JP S56148833 A JPS56148833 A JP S56148833A
Authority
JP
Japan
Prior art keywords
electrode
gas
chlorine
covalence
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5236180A
Other languages
Japanese (ja)
Inventor
Masahiro Shibagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5236180A priority Critical patent/JPS56148833A/en
Publication of JPS56148833A publication Critical patent/JPS56148833A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable acceleration by a method wherein a reactive gas, in which chlorine molecules or carbon atoms covalence-bond, is introduced, and a metallic silicide film having the high melting point is etched on an electrode, on which a carbon plate is placed and which is energized with high frequency. CONSTITUTION:One electrode 14 between a pair of electrodes mutually arranged oppositely is grounded, unified with a vacuum vessel 15 and used as an anode, and high-frequency power is applied from 22 and 23 employing the other electrode 13 as a cathode. Consequently, a reactive gss introduced from a gas introducing port 17 such as chlorine gas or a gas in which carbon atoms and chlorine atoms covalence-bond is activated by glow discharge, plasma is formed, and a metallic silicide film 16 having the high melting point on a carbon plate 25 pasted on the electrode 13 is etched using positive ions in the plasma positively as an etchent. Thus, etching is accelerated, and under-cuts are removed.
JP5236180A 1980-04-22 1980-04-22 Plasma etching method Pending JPS56148833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5236180A JPS56148833A (en) 1980-04-22 1980-04-22 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5236180A JPS56148833A (en) 1980-04-22 1980-04-22 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS56148833A true JPS56148833A (en) 1981-11-18

Family

ID=12912659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5236180A Pending JPS56148833A (en) 1980-04-22 1980-04-22 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS56148833A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195477A2 (en) * 1985-03-18 1986-09-24 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma
US5958801A (en) * 1989-07-20 1999-09-28 Micron Technology, Inc. Anisotropic etch method
CN110790263A (en) * 2015-05-13 2020-02-14 储晞 Three-dimensional graphene production method and device, composite electrode material, preparation and application

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195477A2 (en) * 1985-03-18 1986-09-24 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma
US5958801A (en) * 1989-07-20 1999-09-28 Micron Technology, Inc. Anisotropic etch method
US6133156A (en) * 1989-07-20 2000-10-17 Micron Technology, Inc, Anisotropic etch method
US6461976B1 (en) 1989-07-20 2002-10-08 Micron Technology, Inc. Anisotropic etch method
US6686295B2 (en) 1989-07-20 2004-02-03 Micron Technology, Inc. Anisotropic etch method
US7375036B2 (en) 1989-07-20 2008-05-20 Micron Technology, Inc Anisotropic etch method
CN110790263A (en) * 2015-05-13 2020-02-14 储晞 Three-dimensional graphene production method and device, composite electrode material, preparation and application

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