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JPS5568636A - Anodic oxidation method of compound semiconductor by plasma - Google Patents

Anodic oxidation method of compound semiconductor by plasma

Info

Publication number
JPS5568636A
JPS5568636A JP14228078A JP14228078A JPS5568636A JP S5568636 A JPS5568636 A JP S5568636A JP 14228078 A JP14228078 A JP 14228078A JP 14228078 A JP14228078 A JP 14228078A JP S5568636 A JPS5568636 A JP S5568636A
Authority
JP
Japan
Prior art keywords
anode
plasma
cathode
anodic oxidation
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14228078A
Other languages
Japanese (ja)
Other versions
JPS575054B2 (en
Inventor
Yukinobu Shinoda
Masao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14228078A priority Critical patent/JPS5568636A/en
Publication of JPS5568636A publication Critical patent/JPS5568636A/en
Publication of JPS575054B2 publication Critical patent/JPS575054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a stable oxide film, by producing an anodic oxidation film by plasma, switching an anode and a cathode by each other, etching the film by plasma of O2, treating the surface of a substrate, and oxidizing the substrate with itself as an anode. CONSTITUTION:A sample 5 of GaAs is set on a pedestal 7. A switch 8 is so operated that the sample serves as an anode and an electrode 6 serves as a cathode. An anodic oxidation film is produced by plasma of O2. The switch 8 is then operated so that the sample serves as a cathode and the electrode 6 serves as an anode. The film is etched in two stages. At that time, the etching would not be caused and the surface of a substrate would be treated if the anode and the cathode were not switched by each other. The anode and the cathode are replaced again by each other through the switch 8 so theat an oxide film is produced on the sample 5. It is eacy to etch the oxide films. The dielectric strength of the films is high. The films have little hysteresis.
JP14228078A 1978-11-20 1978-11-20 Anodic oxidation method of compound semiconductor by plasma Granted JPS5568636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14228078A JPS5568636A (en) 1978-11-20 1978-11-20 Anodic oxidation method of compound semiconductor by plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14228078A JPS5568636A (en) 1978-11-20 1978-11-20 Anodic oxidation method of compound semiconductor by plasma

Publications (2)

Publication Number Publication Date
JPS5568636A true JPS5568636A (en) 1980-05-23
JPS575054B2 JPS575054B2 (en) 1982-01-28

Family

ID=15311682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14228078A Granted JPS5568636A (en) 1978-11-20 1978-11-20 Anodic oxidation method of compound semiconductor by plasma

Country Status (1)

Country Link
JP (1) JPS5568636A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100468A (en) * 1983-11-07 1985-06-04 Hitachi Ltd Thin film semiconductor device and manufacture thereof
JPS61279180A (en) * 1985-06-04 1986-12-09 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
WO1997019203A1 (en) * 1995-11-22 1997-05-29 Balzers Aktiengesellschaft Plasma-assisted thermochemical surface-treatment method, installation for carrying out the method and use of the method and installation
JP2008028252A (en) * 2006-07-24 2008-02-07 Toshiba Matsushita Display Technology Co Ltd Processing method and processing device of semiconductor layer, and manufacturing method and manufacturing equipment of thin film transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5977449U (en) * 1982-11-17 1984-05-25 ダイハツ工業株式会社 car seat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID STATE TECHNOLOGY=1970 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100468A (en) * 1983-11-07 1985-06-04 Hitachi Ltd Thin film semiconductor device and manufacture thereof
JPH0530053B2 (en) * 1983-11-07 1993-05-07 Hitachi Ltd
JPS61279180A (en) * 1985-06-04 1986-12-09 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
WO1997019203A1 (en) * 1995-11-22 1997-05-29 Balzers Aktiengesellschaft Plasma-assisted thermochemical surface-treatment method, installation for carrying out the method and use of the method and installation
JP2008028252A (en) * 2006-07-24 2008-02-07 Toshiba Matsushita Display Technology Co Ltd Processing method and processing device of semiconductor layer, and manufacturing method and manufacturing equipment of thin film transistor

Also Published As

Publication number Publication date
JPS575054B2 (en) 1982-01-28

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