JPS56132343A - Mask for x-ray exposure and its manufacture - Google Patents

Abstract

PURPOSE:To prevent a transfer deviation in pattern formation due to a temp. difference by forming a support frame supporting a support film for an X-ray absorber pattern with a material of >=1mm. thickness having a coefft. of thermal expansion almost equal to that of a substrate to be processed through making the region except the frame region thinner and then forming the support film and the pattern. CONSTITUTION:In the manufacture of a mask for X-ray exposure to obtain a resist pattern having a high aspect ratio, film forming silicon substrate 51 having >=1mm. thickness is partially removed except frame region 52 by an ultrasonic working method to form thin region 53. Polyamic acid is applied to substrate 51, dried, and converted into polyimide by heat treatment to form polyimide film 54. Region 52 is then protected with O ring 55, and region 53 is removed by etching. After forming resist pattern 56 on film 54, X-ray absorber 57 such as gold is vapor deposited on the uncovered surface of film 54, and pattern 56 is peeled off. Thus, by forming region 52 with silicon material almost equal to the material of a circuit substrate to be exposed to X-rays, a transfer deviation due to a temp. difference between the mask and the material to be processed is prevented to give a minute pattern with accuracy.