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JPS5489569A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5489569A
JPS5489569A JP15965777A JP15965777A JPS5489569A JP S5489569 A JPS5489569 A JP S5489569A JP 15965777 A JP15965777 A JP 15965777A JP 15965777 A JP15965777 A JP 15965777A JP S5489569 A JPS5489569 A JP S5489569A
Authority
JP
Japan
Prior art keywords
platinum
mask
resist
layer
normal temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15965777A
Other languages
Japanese (ja)
Inventor
Toru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15965777A priority Critical patent/JPS5489569A/en
Publication of JPS5489569A publication Critical patent/JPS5489569A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To cancel the pattern destruction due to the deformation of mask resist with the etching of Al at normal temperature by taking platinum as the mask.
CONSTITUTION: The positive-resist layer 12 is formed on the Al layer 11 on the substrate 10 and it is covered with the platinum film 13. The layer 12 is immersed in the ultrasonic wave acetone vessel and platinum mask is formed by lifting off the platinum. The Al 11 is etched with the platinum mask 13 by means of normal temperature processing with conventional positive-resist development liquid. Since the mask is made of platinum, the correct pattern is formed with better adherence than the case of conventional resist and quick etching is made with ultrasonic waves.
COPYRIGHT: (C)1979,JPO&Japio
JP15965777A 1977-12-27 1977-12-27 Manufacture for semiconductor device Pending JPS5489569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15965777A JPS5489569A (en) 1977-12-27 1977-12-27 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15965777A JPS5489569A (en) 1977-12-27 1977-12-27 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5489569A true JPS5489569A (en) 1979-07-16

Family

ID=15698483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15965777A Pending JPS5489569A (en) 1977-12-27 1977-12-27 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5489569A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231818A (en) * 1983-06-14 1984-12-26 Puretetsuku:Kk Etching apparatus
JPS60124828A (en) * 1983-12-08 1985-07-03 Rohm Co Ltd Lifting off process by ultrasonic wave
JPS6182425A (en) * 1984-09-29 1986-04-26 Toshiba Corp Charged beam exposure equipment
JPS61267327A (en) * 1985-05-22 1986-11-26 Oki Electric Ind Co Ltd Lift-off in manufacturing process of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231818A (en) * 1983-06-14 1984-12-26 Puretetsuku:Kk Etching apparatus
JPS60124828A (en) * 1983-12-08 1985-07-03 Rohm Co Ltd Lifting off process by ultrasonic wave
JPH0434294B2 (en) * 1983-12-08 1992-06-05 Rohm Kk
JPS6182425A (en) * 1984-09-29 1986-04-26 Toshiba Corp Charged beam exposure equipment
JPS61267327A (en) * 1985-05-22 1986-11-26 Oki Electric Ind Co Ltd Lift-off in manufacturing process of semiconductor device

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