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JPS5611687A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5611687A
JPS5611687A JP7383780A JP7383780A JPS5611687A JP S5611687 A JPS5611687 A JP S5611687A JP 7383780 A JP7383780 A JP 7383780A JP 7383780 A JP7383780 A JP 7383780A JP S5611687 A JPS5611687 A JP S5611687A
Authority
JP
Japan
Prior art keywords
lines
sets
amplifier
readout
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7383780A
Other languages
Japanese (ja)
Inventor
Junichi Mogi
Kiyoshi Miyasaka
Yasuo Suzuki
Takumi Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7383780A priority Critical patent/JPS5611687A/en
Publication of JPS5611687A publication Critical patent/JPS5611687A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To enable the high speed write-in and prevention of mis-readout, by providing the memory cell formed with FET and a capacitor at the specified cross point for two sets of bit lines and two sets of word lines, and by differential amplification of signal between two sets of bit lines. CONSTITUTION:The memory cells consisting of static capacitors 1161, 1162 and MISFET1151, 1152 are respectively provided at the cross points of the line 104 and line 1171 and of the lines 105 and 1172 among two sets of parallel bit lines 104, 105 to which the differential type sense amplifier 101 is connected, and among two sets of word lines 1171, 1172, and the capacitor 1161 is selected via the word line 1171. Then, when the input amplifier 113 is connected by turning on MISFET106, 107 on the lines 104, 105, the lines 104, 105 are respectively at high and low potential, and the potential on the line 104 is increased with the amplifier 101 and the write- in to the capacitor 1161 can be ensured in high speed. This is the same to readout, and when the ground terminal 121 of the amplifier 101 is kept at low potential, the readout data is amplified, and it is further amplified at the amplifier 114 to prevent the production of mis-readout.
JP7383780A 1980-06-02 1980-06-02 Semiconductor memory unit Pending JPS5611687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7383780A JPS5611687A (en) 1980-06-02 1980-06-02 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7383780A JPS5611687A (en) 1980-06-02 1980-06-02 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5611687A true JPS5611687A (en) 1981-02-05

Family

ID=13529644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7383780A Pending JPS5611687A (en) 1980-06-02 1980-06-02 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5611687A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169995A (en) * 1981-07-24 1982-10-19 Nec Corp Memory circuit
JPS5818318A (en) * 1981-07-10 1983-02-02 ヘキスト・アクチエンゲゼルシヤフト Stomach acceptable drug form of xanthine derivative and manufacture
US4983401A (en) * 1989-05-22 1991-01-08 Kinaform Technology, Inc. Sustained release pharmaceutical preparations having pH controlled membrane coatings
US5376384A (en) * 1992-12-23 1994-12-27 Kinaform Technology, Inc. Delayed, sustained-release pharmaceutical preparation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5174535A (en) * 1974-12-25 1976-06-28 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5174535A (en) * 1974-12-25 1976-06-28 Hitachi Ltd

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818318A (en) * 1981-07-10 1983-02-02 ヘキスト・アクチエンゲゼルシヤフト Stomach acceptable drug form of xanthine derivative and manufacture
JPH0419969B2 (en) * 1981-07-10 1992-03-31 Hoechst Ag
JPS57169995A (en) * 1981-07-24 1982-10-19 Nec Corp Memory circuit
JPS6131556B2 (en) * 1981-07-24 1986-07-21 Nippon Electric Co
US4983401A (en) * 1989-05-22 1991-01-08 Kinaform Technology, Inc. Sustained release pharmaceutical preparations having pH controlled membrane coatings
US5376384A (en) * 1992-12-23 1994-12-27 Kinaform Technology, Inc. Delayed, sustained-release pharmaceutical preparation
US5478573A (en) * 1992-12-23 1995-12-26 Kinaform Technology, Inc. Delayed, sustained-release propranolol pharmaceutical preparation
US5529790A (en) * 1992-12-23 1996-06-25 Kinaform Technology, Inc. Delayed, sustained-release diltiazem pharmaceutical preparation

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