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JPS57100689A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS57100689A
JPS57100689A JP55176676A JP17667680A JPS57100689A JP S57100689 A JPS57100689 A JP S57100689A JP 55176676 A JP55176676 A JP 55176676A JP 17667680 A JP17667680 A JP 17667680A JP S57100689 A JPS57100689 A JP S57100689A
Authority
JP
Japan
Prior art keywords
couples
bit lines
divided
sense amplifiers
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55176676A
Other languages
Japanese (ja)
Inventor
Tomio Nakano
Masao Nakano
Norihisa Tsuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55176676A priority Critical patent/JPS57100689A/en
Publication of JPS57100689A publication Critical patent/JPS57100689A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To facilitate the design of a sense amplifier when the number of sense amplifiers of a large scale memory is decreased and the number of memory cells connected to couples of bit lines are equal, by separating couples of bit lines of one column. CONSTITUTION:Couples of bit lines provided to respective columns are divided into two in the center, and sense amplifiers SA1-SAm are provided at the division part; the sense amplifiers SAn (n=1-m) and the couples of bit lines BLn1 and -BLn1, and BLn2 and -BLn2 divided at both their sides are connected mutually through gates BSn1 and BSn2. One terminal of each column is connected to a couple of common data lines D and -D through a selecting means CLSn, which is supplied with a column selection signal CLn. The respective divided bit-line couples are provided with dummy cells DCn1 and DCn2, and DCn3 and DCn4. During the reading operation of a cell MC11, a differential signal generated between the BL11 and -BL11 is amplified by the SA1 by connection signals S1 and S2 and a clock signal BC.
JP55176676A 1980-12-15 1980-12-15 Semiconductor storage device Pending JPS57100689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176676A JPS57100689A (en) 1980-12-15 1980-12-15 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176676A JPS57100689A (en) 1980-12-15 1980-12-15 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS57100689A true JPS57100689A (en) 1982-06-22

Family

ID=16017769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176676A Pending JPS57100689A (en) 1980-12-15 1980-12-15 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57100689A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
JPS59101093A (en) * 1982-11-30 1984-06-11 Fujitsu Ltd semiconductor storage device
JPS60696A (en) * 1983-06-16 1985-01-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory
JPS61122996A (en) * 1984-08-29 1986-06-10 テキサス　インスツルメンツ　インコ−ポレイテツド Semiconductor dynamic memory device
JPS61123093A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd semiconductor storage device
JPS61123094A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd Semiconductor memory device
JPS62197992A (en) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp Dynamic ram
JPS62153700U (en) * 1986-03-20 1987-09-29
JPS632197A (en) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp Semiconductor storage device
JPS63146293A (en) * 1986-12-09 1988-06-18 Toshiba Corp Semiconductor memory device
JPS63201992A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Semiconductor memory device
JPH02236893A (en) * 1990-02-23 1990-09-19 Hitachi Ltd Semiconductor memory device
JPH02263388A (en) * 1990-02-23 1990-10-26 Hitachi Ltd Semiconductor memory device
JPH03137891A (en) * 1990-05-18 1991-06-12 Hitachi Ltd Semiconductor memory device
JPH04268286A (en) * 1991-02-22 1992-09-24 Nec Ic Microcomput Syst Ltd Semiconductor memory
US5267214A (en) * 1990-02-16 1993-11-30 Mitsubishi Denki Kabushiki Kaisha Shared-sense amplifier control signal generating circuit in dynamic type semiconductor memory device and operating method therefor

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243279B2 (en) * 1981-05-29 1990-09-27
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
JPS59101093A (en) * 1982-11-30 1984-06-11 Fujitsu Ltd semiconductor storage device
JPS60696A (en) * 1983-06-16 1985-01-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory
JPS61122996A (en) * 1984-08-29 1986-06-10 テキサス　インスツルメンツ　インコ−ポレイテツド Semiconductor dynamic memory device
JPH0520834B2 (en) * 1984-08-29 1993-03-22 Texas Instruments Inc
JPH0412556B2 (en) * 1984-11-20 1992-03-04 Fujitsu Ltd
JPS61123094A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd Semiconductor memory device
JPS61123093A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd semiconductor storage device
JPS62197992A (en) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp Dynamic ram
JPS62153700U (en) * 1986-03-20 1987-09-29
JPS632197A (en) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp Semiconductor storage device
JPS63146293A (en) * 1986-12-09 1988-06-18 Toshiba Corp Semiconductor memory device
JPS63201992A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Semiconductor memory device
US5267214A (en) * 1990-02-16 1993-11-30 Mitsubishi Denki Kabushiki Kaisha Shared-sense amplifier control signal generating circuit in dynamic type semiconductor memory device and operating method therefor
JPH02263388A (en) * 1990-02-23 1990-10-26 Hitachi Ltd Semiconductor memory device
JPH0561712B2 (en) * 1990-02-23 1993-09-06 Hitachi Ltd
JPH02236893A (en) * 1990-02-23 1990-09-19 Hitachi Ltd Semiconductor memory device
JPH03137891A (en) * 1990-05-18 1991-06-12 Hitachi Ltd Semiconductor memory device
JPH04268286A (en) * 1991-02-22 1992-09-24 Nec Ic Microcomput Syst Ltd Semiconductor memory

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