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JPS5693178A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5693178A
JPS5693178A JP16973979A JP16973979A JPS5693178A JP S5693178 A JPS5693178 A JP S5693178A JP 16973979 A JP16973979 A JP 16973979A JP 16973979 A JP16973979 A JP 16973979A JP S5693178 A JPS5693178 A JP S5693178A
Authority
JP
Japan
Prior art keywords
bar
bit line
discharged
line
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16973979A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Hiroshi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16973979A priority Critical patent/JPS5693178A/en
Publication of JPS5693178A publication Critical patent/JPS5693178A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To realize a high-speed operation and low power consumption for a semiconductor memory device, by giving a consideration to the relation of arrangements among the sense amplifier, the bit line and the input/output signal line each. CONSTITUTION:The input/output signal line I/O and the bar I/O are connected directly to the nodes N1 and N2 of the sense amplifier 8A via the MOSFET21 and 22 each but with no intervention of the bit line pair of BL1 and bar BL2 plus bar BL1 and BL2 each. With this connection, either one of the signal line I/O and the bar I/O which are precharged according to the write contents O of the memory cell MC3 is discharged to perform a reading. In this case, only the bit line pair BL2 and bar BL2 are connected to the nodes N1 and N2 based on the line address, and thus only the line BL2 is discharged. Thus only one bit line is discharged to reduce the power consumption caused by the charge/discharge. At the same time, the access time is also reduced owing to a small discharge capacity.
JP16973979A 1979-12-26 1979-12-26 Semiconductor memory device Pending JPS5693178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16973979A JPS5693178A (en) 1979-12-26 1979-12-26 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16973979A JPS5693178A (en) 1979-12-26 1979-12-26 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5693178A true JPS5693178A (en) 1981-07-28

Family

ID=15891941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16973979A Pending JPS5693178A (en) 1979-12-26 1979-12-26 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5693178A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
JPS58177593A (en) * 1982-04-09 1983-10-18 Toshiba Corp Semiconductor storage device
JPS60171691A (en) * 1984-02-17 1985-09-05 Hitachi Ltd Semiconductor memory device
JPS6150284A (en) * 1984-08-17 1986-03-12 Mitsubishi Electric Corp Driving method of shared sense amplifier circuit
JPS61242396A (en) * 1985-04-19 1986-10-28 Nec Corp Semiconductor memory
JPS63249998A (en) * 1987-04-06 1988-10-17 Nec Corp Semiconductor memory device
JPH01144292A (en) * 1987-11-30 1989-06-06 Nec Corp Semiconductor memory
JPH02236893A (en) * 1990-02-23 1990-09-19 Hitachi Ltd Semiconductor memory device
JPH02263388A (en) * 1990-02-23 1990-10-26 Hitachi Ltd Semiconductor memory device
JP2002208276A (en) * 2001-01-12 2002-07-26 Sony Corp Memory device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243279B2 (en) * 1981-05-29 1990-09-27
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
JPS58177593A (en) * 1982-04-09 1983-10-18 Toshiba Corp Semiconductor storage device
JPH0410155B2 (en) * 1982-04-09 1992-02-24
JPS60171691A (en) * 1984-02-17 1985-09-05 Hitachi Ltd Semiconductor memory device
JPS6150284A (en) * 1984-08-17 1986-03-12 Mitsubishi Electric Corp Driving method of shared sense amplifier circuit
JPS61242396A (en) * 1985-04-19 1986-10-28 Nec Corp Semiconductor memory
JPS63249998A (en) * 1987-04-06 1988-10-17 Nec Corp Semiconductor memory device
JPH01144292A (en) * 1987-11-30 1989-06-06 Nec Corp Semiconductor memory
JPH02263388A (en) * 1990-02-23 1990-10-26 Hitachi Ltd Semiconductor memory device
JPH02236893A (en) * 1990-02-23 1990-09-19 Hitachi Ltd Semiconductor memory device
JPH0561712B2 (en) * 1990-02-23 1993-09-06 Hitachi Ltd
JP2002208276A (en) * 2001-01-12 2002-07-26 Sony Corp Memory device

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