JPS5596951A - Negative for photomask - Google Patents
Negative for photomaskInfo
- Publication number
- JPS5596951A JPS5596951A JP463279A JP463279A JPS5596951A JP S5596951 A JPS5596951 A JP S5596951A JP 463279 A JP463279 A JP 463279A JP 463279 A JP463279 A JP 463279A JP S5596951 A JPS5596951 A JP S5596951A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photomask
- negative
- transmissive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To obtain the title negative, which is not charged in production of a photomask, by covering both main faces of a light-transmissive substrate with light- transmissive electrically-conductive films electrically connected to each other and by attaching a pattern-forming opaque film to one main face. CONSTITUTION:Preheated light-transmissive substrate 1 is sprayed with a mixed solution of a tin chloride solution and an antimony chloride solution to form light- transmissive electrically-conductive film 6 all over the substrate 1 surface. Next, by vacuum-depositing or sputtering chromium or the like light-untransmissive metal film 2 is formed on one main face to obtain a negative (hard surface plate) for a photomask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP463279A JPS5596951A (en) | 1979-01-17 | 1979-01-17 | Negative for photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP463279A JPS5596951A (en) | 1979-01-17 | 1979-01-17 | Negative for photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5596951A true JPS5596951A (en) | 1980-07-23 |
Family
ID=11589381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP463279A Pending JPS5596951A (en) | 1979-01-17 | 1979-01-17 | Negative for photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5596951A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739490U (en) * | 1980-08-18 | 1982-03-03 | ||
JPS5741638A (en) * | 1980-08-25 | 1982-03-08 | Fujitsu Ltd | Photomask for electron beam |
JPS57173632U (en) * | 1981-04-28 | 1982-11-01 | ||
JPS5824143A (en) * | 1981-08-06 | 1983-02-14 | Fujitsu Ltd | Photomask |
JPS5830127A (en) * | 1981-08-14 | 1983-02-22 | Toshiba Corp | Mask blanks for electron beam exposure |
JPS59181330A (en) * | 1983-03-31 | 1984-10-15 | Nitto Electric Ind Co Ltd | Exposure processing method |
JPS6052019A (en) * | 1983-08-31 | 1985-03-23 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6438638U (en) * | 1987-08-31 | 1989-03-08 | ||
JP2015025894A (en) * | 2013-07-25 | 2015-02-05 | 株式会社エスケーエレクトロニクス | Photomask and manufacturing method of photomask |
JP2021015295A (en) * | 2015-06-17 | 2021-02-12 | Hoya株式会社 | Substrate with conductive film, substrate with multilayer reflection film, reflection type mask blank, reflection type mask, and method for manufacturing semiconductor device |
-
1979
- 1979-01-17 JP JP463279A patent/JPS5596951A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6018870Y2 (en) * | 1980-08-18 | 1985-06-07 | 株式会社東芝 | Plug-in unit storage device |
JPS5739490U (en) * | 1980-08-18 | 1982-03-03 | ||
JPS5741638A (en) * | 1980-08-25 | 1982-03-08 | Fujitsu Ltd | Photomask for electron beam |
JPS6262336B2 (en) * | 1980-08-25 | 1987-12-25 | Fujitsu Ltd | |
JPS57173632U (en) * | 1981-04-28 | 1982-11-01 | ||
JPS597889Y2 (en) * | 1981-04-28 | 1984-03-10 | 株式会社遠藤製作所 | Tempura scooper |
JPS5824143A (en) * | 1981-08-06 | 1983-02-14 | Fujitsu Ltd | Photomask |
JPS5830127A (en) * | 1981-08-14 | 1983-02-22 | Toshiba Corp | Mask blanks for electron beam exposure |
JPS59181330A (en) * | 1983-03-31 | 1984-10-15 | Nitto Electric Ind Co Ltd | Exposure processing method |
JPS6052019A (en) * | 1983-08-31 | 1985-03-23 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6438638U (en) * | 1987-08-31 | 1989-03-08 | ||
JP2015025894A (en) * | 2013-07-25 | 2015-02-05 | 株式会社エスケーエレクトロニクス | Photomask and manufacturing method of photomask |
JP2021015295A (en) * | 2015-06-17 | 2021-02-12 | Hoya株式会社 | Substrate with conductive film, substrate with multilayer reflection film, reflection type mask blank, reflection type mask, and method for manufacturing semiconductor device |
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