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JPS5578532A - Formation of electrode for semiconductor device - Google Patents

Formation of electrode for semiconductor device

Info

Publication number
JPS5578532A
JPS5578532A JP15245978A JP15245978A JPS5578532A JP S5578532 A JPS5578532 A JP S5578532A JP 15245978 A JP15245978 A JP 15245978A JP 15245978 A JP15245978 A JP 15245978A JP S5578532 A JPS5578532 A JP S5578532A
Authority
JP
Japan
Prior art keywords
electrode
insulating coat
film
window
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15245978A
Other languages
Japanese (ja)
Other versions
JPS5923475B2 (en
Inventor
Yoshimi Tanaka
Shoichi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15245978A priority Critical patent/JPS5923475B2/en
Publication of JPS5578532A publication Critical patent/JPS5578532A/en
Publication of JPS5923475B2 publication Critical patent/JPS5923475B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve workability by forming an electrode on an insulating coat concurrently from a semiconductor substrate according to lift-off process in view of the insulating coat on each electrode getting thin gradually in accordance with the manufacturing sequence.
CONSTITUTION: A window 9 is perforated so as to have the width l2 larger than the width l1 of an area to perforate window for forming a base electrode and also to have an insulating coat covering the top of a silicon substrate 1 exposed partly in the interior of the window 9. Next, an etching time is taken so long that an insulating coat part 11 of a base electrode domain can be removed securely but an insulating coat part 12 of the substrate 1 cannot necessarily be removed thoroughly. Then, an electrode metallic film 8 is formed on the surface entirely. The film 8 is divided into that on a photoresist 5 and a window interior perforated in the film 5, and the electrode metallic film in contact with a base domain 3 is formed to cover the insulating coat 12. Next, the film 5 is removed. Thus the breakdown voltage on a collector-base junction can essentially be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP15245978A 1978-12-07 1978-12-07 Method for forming electrodes for semiconductor devices Expired JPS5923475B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15245978A JPS5923475B2 (en) 1978-12-07 1978-12-07 Method for forming electrodes for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15245978A JPS5923475B2 (en) 1978-12-07 1978-12-07 Method for forming electrodes for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5578532A true JPS5578532A (en) 1980-06-13
JPS5923475B2 JPS5923475B2 (en) 1984-06-02

Family

ID=15540972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15245978A Expired JPS5923475B2 (en) 1978-12-07 1978-12-07 Method for forming electrodes for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5923475B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107553A (en) * 1980-01-29 1981-08-26 Nec Corp Semiconductor device and preparation thereof
JPS5792862A (en) * 1980-12-01 1982-06-09 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57102069A (en) * 1980-12-17 1982-06-24 Mitsubishi Electric Corp Semiconductor device
JPS57160126A (en) * 1981-03-27 1982-10-02 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57176769A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS58157129A (en) * 1982-03-12 1983-09-19 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0281426A (en) * 1988-08-11 1990-03-22 Samsung Electron Co Ltd Manufacture of semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107553A (en) * 1980-01-29 1981-08-26 Nec Corp Semiconductor device and preparation thereof
JPS6325716B2 (en) * 1980-01-29 1988-05-26 Nippon Electric Co
JPS5792862A (en) * 1980-12-01 1982-06-09 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57102069A (en) * 1980-12-17 1982-06-24 Mitsubishi Electric Corp Semiconductor device
JPS57160126A (en) * 1981-03-27 1982-10-02 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57176769A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS58157129A (en) * 1982-03-12 1983-09-19 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0281426A (en) * 1988-08-11 1990-03-22 Samsung Electron Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5923475B2 (en) 1984-06-02

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