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JPS5291382A - Insulating gate type field effect transistor - Google Patents

Insulating gate type field effect transistor

Info

Publication number
JPS5291382A
JPS5291382A JP770976A JP770976A JPS5291382A JP S5291382 A JPS5291382 A JP S5291382A JP 770976 A JP770976 A JP 770976A JP 770976 A JP770976 A JP 770976A JP S5291382 A JPS5291382 A JP S5291382A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
insulating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP770976A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP770976A priority Critical patent/JPS5291382A/en
Publication of JPS5291382A publication Critical patent/JPS5291382A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make higher for the integration, by making self matching for the gate electrode to the active domain edge of the semiconductor base, terminal part, and exposing surface, in a transitor in which the conventional electrode wire of the second layer is coupled in conduction to the electrode with high melting point metal of the first layer exposed.
COPYRIGHT: (C)1977,JPO&Japio
JP770976A 1976-01-26 1976-01-26 Insulating gate type field effect transistor Pending JPS5291382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP770976A JPS5291382A (en) 1976-01-26 1976-01-26 Insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP770976A JPS5291382A (en) 1976-01-26 1976-01-26 Insulating gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5291382A true JPS5291382A (en) 1977-08-01

Family

ID=11673259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP770976A Pending JPS5291382A (en) 1976-01-26 1976-01-26 Insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5291382A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139389A (en) * 1976-05-14 1977-11-21 Ibm Selffmatching fet transistor and method of producing same
JPS5466077A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPS5599779A (en) * 1979-01-24 1980-07-30 Siemens Ag Method of fabricating integrated mos circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52139389A (en) * 1976-05-14 1977-11-21 Ibm Selffmatching fet transistor and method of producing same
JPS571145B2 (en) * 1976-05-14 1982-01-09
JPS5466077A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPS5599779A (en) * 1979-01-24 1980-07-30 Siemens Ag Method of fabricating integrated mos circuit
JPH0235461B2 (en) * 1979-01-24 1990-08-10 Siemens Ag

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