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JPS5536927A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5536927A
JPS5536927A JP10844578A JP10844578A JPS5536927A JP S5536927 A JPS5536927 A JP S5536927A JP 10844578 A JP10844578 A JP 10844578A JP 10844578 A JP10844578 A JP 10844578A JP S5536927 A JPS5536927 A JP S5536927A
Authority
JP
Japan
Prior art keywords
film
electrode
layer
wiring
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10844578A
Other languages
Japanese (ja)
Other versions
JPS6056295B2 (en
Inventor
Ichiro Fujita
Toshihiko Ono
Toshio Kurahashi
Kazuo Tanaka
Akira Ooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10844578A priority Critical patent/JPS6056295B2/en
Publication of JPS5536927A publication Critical patent/JPS5536927A/en
Publication of JPS6056295B2 publication Critical patent/JPS6056295B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To make a pattern available in high density from facilitating formation of a contact window by a metamorphic layer which is obtainable, through high-frequency spatter etching, on the surface of an insulating film formed after applying a lower layer electrode and a wiring on semiconductor substrate.
CONSTITUTION: An electrode contact window 2a is formed, through patterning, in a heat-oxidized silicon dioxide film 2 on a semiconductor substrate 1, a silicon dioxide film 3 is then grown according to chemical vapor phase growth process, and the electrode contact window 2a is exposed from patterning the film 3. Further an Al film 5 is formed for which a photoresist film 4 is left as it is, then the film 4 is removed to form electrode and wiring 5 of the first layer, and a silicon dioxide film 7 is further formed. Next, the film 7 is subjected to high-frequency spatter etching to expose electrode and wiring 5e of the first layer and also to form a metamorphic layer on the surface. A silicon dioxide film 8 and a photoresist film 9 are formed furthermore, an etching window 9 is formed from patterning the film 9, and then electrode and wiring 10e of the second layer are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP10844578A 1978-09-04 1978-09-04 Manufacturing method of semiconductor device Expired JPS6056295B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10844578A JPS6056295B2 (en) 1978-09-04 1978-09-04 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10844578A JPS6056295B2 (en) 1978-09-04 1978-09-04 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5536927A true JPS5536927A (en) 1980-03-14
JPS6056295B2 JPS6056295B2 (en) 1985-12-09

Family

ID=14484952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10844578A Expired JPS6056295B2 (en) 1978-09-04 1978-09-04 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6056295B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192916A (en) * 1983-04-16 1984-11-01 Hitachi Zosen Corp Generating method of crank mark signal

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0381414U (en) * 1989-12-11 1991-08-20
JPH0381413U (en) * 1989-12-11 1991-08-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59192916A (en) * 1983-04-16 1984-11-01 Hitachi Zosen Corp Generating method of crank mark signal

Also Published As

Publication number Publication date
JPS6056295B2 (en) 1985-12-09

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