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JPS5538084A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5538084A
JPS5538084A JP11207578A JP11207578A JPS5538084A JP S5538084 A JPS5538084 A JP S5538084A JP 11207578 A JP11207578 A JP 11207578A JP 11207578 A JP11207578 A JP 11207578A JP S5538084 A JPS5538084 A JP S5538084A
Authority
JP
Japan
Prior art keywords
film
sio
type
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11207578A
Other languages
Japanese (ja)
Other versions
JPS6318331B2 (en
Inventor
Yoji Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11207578A priority Critical patent/JPS5538084A/en
Publication of JPS5538084A publication Critical patent/JPS5538084A/en
Publication of JPS6318331B2 publication Critical patent/JPS6318331B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: In a semiconductor integrated circuit device with a selective oxide film which is composed of a silicon nitride film on a minus conduction type semiconductor substrate, to reduce the area of a circuit by oxidating the whole domain divided by the selective oxide film.
CONSTITUTION: An n-type impurity layer 102 is formed by diffusing P on a p-type Si substrate 101, on which is coated a SiO2 film 103 and moreover on which a Si3N4 film 104 is allowed to grow. Then a Si3N4 film 104 and a SiO2 film 103 are etched masking photoresist 105. Then B is diffused masking the Si3N4 film 104, etc. and a p+-type diffusion layer 106 is formed. After that, heat treatment is carried out until the whole n-type diffusion layer is covered with a SiO2 film 107. The Si3N4 film 104 is removed at last.
COPYRIGHT: (C)1980,JPO&Japio
JP11207578A 1978-09-11 1978-09-11 Semiconductor integrated circuit device Granted JPS5538084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11207578A JPS5538084A (en) 1978-09-11 1978-09-11 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11207578A JPS5538084A (en) 1978-09-11 1978-09-11 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5538084A true JPS5538084A (en) 1980-03-17
JPS6318331B2 JPS6318331B2 (en) 1988-04-18

Family

ID=14577437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11207578A Granted JPS5538084A (en) 1978-09-11 1978-09-11 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5538084A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4990885A (en) * 1972-12-28 1974-08-30
JPS5065174A (en) * 1973-09-07 1975-06-02
JPS51102471A (en) * 1971-03-17 1976-09-09 Philips Nv
JPS5293282A (en) * 1976-01-30 1977-08-05 Matsushita Electronics Corp Manufacture for semiconductor integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51102471A (en) * 1971-03-17 1976-09-09 Philips Nv
JPS4990885A (en) * 1972-12-28 1974-08-30
JPS5065174A (en) * 1973-09-07 1975-06-02
JPS5293282A (en) * 1976-01-30 1977-08-05 Matsushita Electronics Corp Manufacture for semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6318331B2 (en) 1988-04-18

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