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JPS55108772A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS55108772A
JPS55108772A JP1664479A JP1664479A JPS55108772A JP S55108772 A JPS55108772 A JP S55108772A JP 1664479 A JP1664479 A JP 1664479A JP 1664479 A JP1664479 A JP 1664479A JP S55108772 A JPS55108772 A JP S55108772A
Authority
JP
Japan
Prior art keywords
poly
crystalline silicon
gate electrode
silicon layer
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1664479A
Other languages
Japanese (ja)
Inventor
Noboru Hirakawa
Tadashi Kuragami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1664479A priority Critical patent/JPS55108772A/en
Publication of JPS55108772A publication Critical patent/JPS55108772A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain high speed signal transmission by a method wherein the thickness of the films in a gate electrode and wiring portion made of the same material is made different in an insulating gate type semiconductor integrated circuit.
CONSTITUTION: A field oxidized film 22 and a gate oxidized film 23 are fromed on the surface of a semiconductor substrate 21. Next a poly-crystalline silicon layer is used as a poly-crystalline silicon gate electrode 24. The poly-crystalline silicon layer is etched excepting the gate electrode portion. Next it is heat-oxidized, and a window for making contact with the poly-crystalline layer is made while letting the poly-crystalline silicon layer grow on the whole surface. Then except poly-crystalline silicon 26 in the wiring portion the remaining poly-crystal silicon is etched. After this, impurities are diffused so as to form source and drain regions 27, 28, make a window for the electrode, and add patterning by photo-etching as usual, and the source and drain electrodes 10, 11 are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP1664479A 1979-02-14 1979-02-14 Semiconductor integrated circuit device Pending JPS55108772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1664479A JPS55108772A (en) 1979-02-14 1979-02-14 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1664479A JPS55108772A (en) 1979-02-14 1979-02-14 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55108772A true JPS55108772A (en) 1980-08-21

Family

ID=11922053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1664479A Pending JPS55108772A (en) 1979-02-14 1979-02-14 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55108772A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235459A (en) * 1984-05-08 1985-11-22 Nec Corp Semiconductor device
US5280190A (en) * 1991-03-21 1994-01-18 Industrial Technology Research Institute Self aligned emitter/runner integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130580A (en) * 1976-04-27 1977-11-01 Toshiba Corp High densityintegrated circuit device
JPS53109487A (en) * 1977-03-07 1978-09-25 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130580A (en) * 1976-04-27 1977-11-01 Toshiba Corp High densityintegrated circuit device
JPS53109487A (en) * 1977-03-07 1978-09-25 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235459A (en) * 1984-05-08 1985-11-22 Nec Corp Semiconductor device
US5280190A (en) * 1991-03-21 1994-01-18 Industrial Technology Research Institute Self aligned emitter/runner integrated circuit

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